Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 44: Line 44:
 
*[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016]
 
*[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016]
 
*[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017]
 
*[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017]
 +
*[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing New Data-300nm SiO<sub>2</sub> 2017]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014]
 
*[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015]
 
*[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015]

Revision as of 10:27, 26 September 2017

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)


OTHER recipes: LS SiN and SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° (pinholes) 100° (pinholes) 250°

SiN (100% SiH4 )

50° (pinholes) 100° (pinholes) 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°