Difference between revisions of "PECVD Recipes"

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=[[PECVD 2 (Advanced Vacuum)]]=
 
=[[PECVD 2 (Advanced Vacuum)]]=
 
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates in Advanced PECVD#2 2015 ]
 
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates in Advanced PECVD#2 2015 ]
  +
*[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates in Advanced PECVD#2 2017 ]
 
== SiO<sub>2</sub> deposition (PECVD #2) ==
 
== SiO<sub>2</sub> deposition (PECVD #2) ==
 
*[[media:New Adv PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]]
 
*[[media:New Adv PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]]

Revision as of 08:58, 23 May 2017

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

OTHER recipes: LS SiN and SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° (pinholes) 100° (pinholes) 250°

SiN (100% SiH4 )

50° (pinholes) 100° (pinholes) 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°