Difference between revisions of "PECVD Recipes"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 257: Line 257:
 
|
 
|
 
*[[Media:01-ICP-PECVD-a-Si-Deposition_Recipe-250C.pdf|a-Si Deposition Recipe - 250°]]
 
*[[Media:01-ICP-PECVD-a-Si-Deposition_Recipe-250C.pdf|a-Si Deposition Recipe - 250°]]
 +
*[[Media:|a-Si Deposition Recipe - 250°]]
 
|-
 
|-
 
|}
 
|}

Revision as of 14:14, 28 July 2016

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

OTHER recipes: LS SiN and SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar)

50° (pinholes) 100° (pinholes) 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° (pinholes) 100° (pinholes) 250°

SiN (100% SiH4 )

50° (pinholes) 100° (pinholes) 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°