Difference between revisions of "PECVD Recipes"
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*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] |
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
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| − | *[[media:PECVD1-SiON-Recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Deposition Recipes - Varying N/O Ratio]] |
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| − | *[[media:PECVD1-SiON-Plot.pdf|SiO<sub>x</sub>N<sub>y</sub> Stress/Index vs. O/N Ratio]] |
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=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
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Revision as of 16:15, 8 January 2015
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)
- Nitride2 Data 2014
- Nitride2 Thickness uniformity 2014
- Deposition Rate: ≈ 9.0 nm/min
- Refractive Index: ≈ 1.952
- Stress ≈ 484MPa
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- Oxide Data 2014
- Oxide Thickness uniformity 2014
- Deposition Rate: ≈ 28.0 nm/min
- Refractive Index: ≈ 1.472
- Stress ≈ -270MPa
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- LS Nitride2 Data 2014
- LS Nitride2 Thickness uniformity 2014
- Deposition Rate: ≈ 8.34 nm/min
- Refractive Index: ≈ 1.932
- Stress ≈ -45MPa
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
| 50° | 100° | 250° |
|---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
| 50° | 100° | 250° |
|---|---|---|
SiN (100% SiH4 )
| 50° | 100° | 250° |
|---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (2% SiH4 - No Ar)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 HDR)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 LDR)
| 50° | 100° | 250° |
|---|---|---|
Amorphous Si (100%SiH4 Ar He)
| 90° | 250° |
|---|---|