PECVD 2 (Advanced Vacuum)

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PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Tool Type Vacuum Deposition
Location Bay 2
Supervisor Don Freeborn
Supervisor Phone (805) 893-7975
Supervisor E-Mail dfreeborn@ece.ucsb.edu
Description Vision 310 Advanced Vacuum PECVD
Manufacturer Plasma-Therm
Vacuum Deposition Recipes
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About

  • Films/Gases: This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases.
  • Size: The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
  • Temperature: Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
  • Low-Stress Si3N4: The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
    • The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > Low-Stress Nitride.

See Also

Documentation

Recipes & Historical Data