Difference between revisions of "PECVD 2 (Advanced Vacuum)"
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=See Also= |
=See Also= |
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*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page] |
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page] |
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| − | =Documentation= |
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| − | *[[media:Advanced PECVD 2-Operating-Manual for Adv. PECVD 2.pdf|Operating Instruction Manual for Advanced PECVD 2]] |
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| − | *[[Advanced PECVD 2 Standard recipes.pdf|Advanced PECVD 2 Standard Recipes]] |
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| − | *[[Advanced PECVD 2 Data-particles, thickness, index.pdf|Advanced PECVD 2 Data-particles, thickness, index]] |
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Revision as of 08:10, 17 August 2012
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About
This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.