Difference between revisions of "PECVD 2 (Advanced Vacuum)"

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|picture=PECVD2.jpg
 
|picture=PECVD2.jpg
 
|type = Vacuum Deposition
 
|type = Vacuum Deposition
|super= Don Freeborn
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|super= Michael Barreraz
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|super2= Don Freeborn
 
|phone=(805)839-7975
 
|phone=(805)839-7975
 
|location=Bay 2
 
|location=Bay 2

Latest revision as of 09:30, 30 August 2022

PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Location Bay 2
Tool Type Vacuum Deposition
Manufacturer Plasma-Therm
Description Vision 310 Advanced Vacuum PECVD

Primary Supervisor Michael Barreraz
(805) 893-4147
mikebarreraz@ece.ucsb.edu

Secondary Supervisor

Don Freeborn


Recipes Vacuum Deposition RecipesN/A

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About

  • Films/Gases: This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases.
  • Size: The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
  • Temperature: Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
  • Low-Stress Si3N4: The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
    • The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > Low-Stress Nitride.

See Also

Documentation

Recipes & Historical Data