Difference between revisions of "PECVD 2 (Advanced Vacuum)"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(→‎About: separated specs into sub-sections)
Line 13: Line 13:
 
==About==
 
==About==
   
This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
+
* '''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si''' using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases.
  +
* '''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
  +
* '''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
  +
* '''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films. The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa.
   
 
==See Also==
 
==See Also==
Line 19: Line 22:
 
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]
 
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]
   
== Documentation ==
+
==Documentation==
*
 
*
 
*
 
*
 
*
 
*
 
*
 
*
 
*
 
*
 
* [https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions]
 
* [[Wafer Coating Process Traveler]]
 
* For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]
 
== Recipes & Historical Data ==
 
   
 
*
* Recipes can be found on the PECVD Recipes Page:
 
 
*
** [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]
 
 
*
** Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4
 
 
*
** ''Historical (Process Control) Data is also shown here.''
 
 
*
* A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:
 
 
*
** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]
 
 
*
 
*
 
*
 
*
 
*[https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions]
 
*[[Wafer Coating Process Traveler]]
 
*For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]
  +
 
==Recipes & Historical Data==
  +
 
*Recipes can be found on the PECVD Recipes Page:
 
**[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]
 
**Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4
 
**''Historical (Process Control) Data is also shown here.''
 
*A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:
 
**[[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]

Revision as of 11:03, 4 November 2021

PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Tool Type Vacuum Deposition
Location Bay 2
Supervisor Don Freeborn
Supervisor Phone (805) 893-7975
Supervisor E-Mail dfreeborn@ece.ucsb.edu
Description Vision 310 Advanced Vacuum PECVD
Manufacturer Plasma-Therm
Vacuum Deposition Recipes
Sign up for this tool


About

  • Films/Gases: This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases.
  • Size: The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
  • Temperature: Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
  • Low-Stress Si3N4: The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films. The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa.

See Also

Documentation

Recipes & Historical Data