Difference between revisions of "PECVD 2 (Advanced Vacuum)"

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== Documentation ==
== Documentation ==
* Standard Operating Instrustions
* Standard Operating Instructions
* Wafer Coating Process Traveler
* Wafer Coating Process Traveler
* For particle count data
* For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]

Revision as of 15:37, 22 April 2020

PECVD 2 (Advanced Vacuum)
Tool Type Vacuum Deposition
Location Bay 2
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description Vision 310 Advanced Vacuum PECVD
Manufacturer Veeco
Vacuum Deposition Recipes
Sign up for this tool


This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.


See Also