Difference between revisions of "PECVD 2 (Advanced Vacuum)"

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This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
 
This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
 
== Recipes ==
 
 
* Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page:
 
** [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''PECVD 2 - Advanced Vacuum''']]
 
* A list of all available deposited films can be found on the Vacuum Deposition Recipes page:
 
** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]
 
  
 
==See Also==
 
==See Also==
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== Documentation ==
 
== Documentation ==
* Standard Operating Instrustions
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* Wafer Coating Process Traveler
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* For particle count data
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* [https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions]
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* [[Wafer Coating Process Traveler]]
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* For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]
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== Recipes & Historical Data ==
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* Recipes can be found on the PECVD Recipes Page:
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** [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]
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** Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4
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** ''Historical (Process Control) Data is also shown here.''
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* A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:
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** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]

Latest revision as of 14:47, 24 August 2021

PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Tool Type Vacuum Deposition
Location Bay 2
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description Vision 310 Advanced Vacuum PECVD
Manufacturer Veeco
Vacuum Deposition Recipes
Sign up for this tool


About

This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.

See Also

Documentation

Recipes & Historical Data