Difference between revisions of "PECVD 2 (Advanced Vacuum)"
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This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films. |
This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films. |
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| − | == Recipes == |
+ | == Recipes & Historical Data == |
* Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page: |
* Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page: |
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** [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''PECVD 2 - Advanced Vacuum''']] |
** [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''PECVD 2 - Advanced Vacuum''']] |
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| − | ** Historical Data is also shown here. |
+ | ** Historical (Process Control) Data is also shown here. |
| − | * A list of all available deposited films can be found on the Vacuum Deposition Recipes page: |
+ | * A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page: |
** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]] |
** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]] |
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Revision as of 14:45, 24 August 2021
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About
This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
Recipes & Historical Data
- Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page:
- Recipes > Vacuum Deposition Recipes > PECVD Recipes > PECVD 2 - Advanced Vacuum
- Historical (Process Control) Data is also shown here.
- A list of all available deposited films can be found on the Vacuum Deposition Recipes page:
See Also
Documentation
- Operating Instructions
- Wafer Coating Process Traveler
- For particle counting method, see the Surfscan Scanning Procedure