Difference between revisions of "PECVD 2 (Advanced Vacuum)"
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|type = Vacuum Deposition |
|type = Vacuum Deposition |
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+ | |super= Brian Lingg |
|phone=(805)839-3918x219 |
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|location=Bay 2 |
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+ | ==About== |
This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films. |
This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films. |
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| + | == Recipes == |
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| + | * Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page: |
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| + | ** [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''PECVD 2 - Advanced Vacuum''']] |
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| + | ** Historical Data is also shown here. |
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| + | * A list of all available deposited films can be found on the Vacuum Deposition Recipes page: |
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| + | ** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]] |
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*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page] |
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page] |
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| + | == Documentation == |
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| + | * |
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| + | * |
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| + | * |
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| + | * |
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| + | * |
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| + | * |
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| + | * [https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions] |
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| + | * [[Wafer Coating Process Traveler]] |
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| + | * For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]] |
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Revision as of 10:03, 16 February 2021
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About
This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
Recipes
- Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page:
- Recipes > Vacuum Deposition Recipes > PECVD Recipes > PECVD 2 - Advanced Vacuum
- Historical Data is also shown here.
- A list of all available deposited films can be found on the Vacuum Deposition Recipes page:
See Also
Documentation
- Operating Instructions
- Wafer Coating Process Traveler
- For particle counting method, see the Surfscan Scanning Procedure