Difference between revisions of "PECVD 1 (PlasmaTherm 790)"

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(→‎Recipes & Process Data: renamed to Recipes and Historical)
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*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]
*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]
== Recipes & Process Data ==
== Recipes & Historical Data ==
* Historical Characterization Data & Standard Recipes can be found at:  [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|'''Recipes > Deposition > <u>PECVD1</u>''']]
* Standard Recipes & Historical (Process Control) Data can be found at:   
** [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|'''Recipes > Deposition > <u>PECVD1</u>''']]

Latest revision as of 13:46, 24 August 2021

PECVD 1 (PlasmaTherm 790)
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Don Freeborn
Supervisor Phone (805) 893-7975
Supervisor E-Mail dfreeborn@ece.ucsb.edu
Description PECVD Plasma Therm 790 For Oxides And Nitrides
Manufacturer Plasma-Therm
Vacuum Deposition Recipes
Sign up for this tool


This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition. CF4/O2 plasmas are used to clean the chamber between depositions.

These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.

Detailed Specifications

  • Gases used: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
  • ~ 10mT ultimate chamber pressure
  • 13.56 Mhz excitation freq.
  • Sample size: pieces to 6” wafers
  • Automatic tuning network
  • RF Power control
  • Full computer operation
  • Standard recipes for a variety of film thicknesses


Recipes & Historical Data