Difference between revisions of "PECVD 1 (PlasmaTherm 790)"

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|picture=PECVD1.jpg
 
|picture=PECVD1.jpg
 
|type = Vacuum Deposition
 
|type = Vacuum Deposition
|super= Brian Lingg
+
|super= Don Freeborn
|phone=(805)839-3918x210
+
|phone=(805)839-7975
 
|location=Bay 3
 
|location=Bay 3
|email=lingg@ece.ucsb.edu
+
|email=dfreeborn@ucsb.edu
 
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
 
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
 
|manufacturer = Plasma-Therm
 
|manufacturer = Plasma-Therm
 
|materials =  
 
|materials =  
 
|toolid=16
 
|toolid=16
}} __TOC__  
+
}}  
= About  =
+
 
 +
__TOC__  
 +
== About  ==
  
 
This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, or SiO<sub>x</sub>N<sub>y</sub> dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO<sub>2</sub> is produced from SiH<sub>4</sub>/He 2%/98% and N<sub>2</sub>O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si<sub>3</sub>N<sub>4</sub> is produced from SiH<sub>4</sub>/He 2%/98% and NH<sub>3</sub> at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N<sub>2</sub>:He ratio of the deposition. CF<sub>4</sub>/O<sub>2</sub> plasmas are used to clean the chamber between depositions.  
 
This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, or SiO<sub>x</sub>N<sub>y</sub> dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO<sub>2</sub> is produced from SiH<sub>4</sub>/He 2%/98% and N<sub>2</sub>O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si<sub>3</sub>N<sub>4</sub> is produced from SiH<sub>4</sub>/He 2%/98% and NH<sub>3</sub> at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N<sub>2</sub>:He ratio of the deposition. CF<sub>4</sub>/O<sub>2</sub> plasmas are used to clean the chamber between depositions.  
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These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.  
 
These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.  
  
= Detailed Specifications  =
+
== Detailed Specifications  ==
  
 
*Gases used: NH<sub>3</sub>, N<sub>2</sub>O, 2%SiH<sub>4</sub>/He, N<sub>2</sub>,CF<sub>4</sub> and O<sub>2</sub>  
 
*Gases used: NH<sub>3</sub>, N<sub>2</sub>O, 2%SiH<sub>4</sub>/He, N<sub>2</sub>,CF<sub>4</sub> and O<sub>2</sub>  
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*Standard recipes for a variety of film thicknesses
 
*Standard recipes for a variety of film thicknesses
  
=Documentation=
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==Documentation==
*[[PECVD1 Operating Instructions.pdf|PECVD1 Operating Instuctions]]
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*[https://wiki.nanotech.ucsb.edu/w/images/d/d2/PECVD1_Operating_Instructions.pdf Operating Instructions]
 +
*[[PECVD1 Wafer Coating Process|Wafer Coating Process Traveler]]
 +
*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]
 +
 
 +
== Recipes & Historical Data ==
 +
* Standard Recipes & Historical (Process Control) Data can be found at: 
 +
** [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|'''Recipes > Deposition > <u>PECVD1</u>''']]

Latest revision as of 14:46, 24 August 2021

PECVD 1 (PlasmaTherm 790)
PECVD1.jpg
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Don Freeborn
Supervisor Phone (805) 893-7975
Supervisor E-Mail dfreeborn@ece.ucsb.edu
Description PECVD Plasma Therm 790 For Oxides And Nitrides
Manufacturer Plasma-Therm
Vacuum Deposition Recipes
Sign up for this tool



About

This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition. CF4/O2 plasmas are used to clean the chamber between depositions.

These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.

Detailed Specifications

  • Gases used: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
  • ~ 10mT ultimate chamber pressure
  • 13.56 Mhz excitation freq.
  • Sample size: pieces to 6” wafers
  • Automatic tuning network
  • RF Power control
  • Full computer operation
  • Standard recipes for a variety of film thicknesses

Documentation

Recipes & Historical Data