Difference between revisions of "PECVD1 Wafer Coating Process"

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The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.
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The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.The section bellow describes how to run standard recipes for SiN a,d SiO2 at 250C.
  
 
== SiN @250C ==
 
== SiN @250C ==
# Log in to PECVD #1 (Staff account).
+
# Log in to PECVD #1  
# Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
+
# Seasoning  
#* Seasoning recipe name
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#* Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.  
#* Deposition recipe name
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# Deposition
#* Cleaning recipe name:
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#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
# Load the seasoning recipe, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.  
+
#* Pump down.  
# Vent the chamber and load a 4"Si wafer (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
+
#* Load the deposition recipe (SiN@250C), and run it.
# Pump down.  
+
#* Unload the wafer.
# Load the deposition recipe, and run it.
+
# Cleaning
# Wait for deposition to be finished. Unload the wafer.
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#* Wipe sidewall first with DI water, followed by IPA.  
# Wipe sidewall first with DI water, followed by IPA.  
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#* Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
# Load recipe for cleaning. Edit the recipe and enter required time for cleaning.
+
#* Log out
# Log out
 
  
 
== SiO2 @250C ==
 
== SiO2 @250C ==
# Log in to PECVD #1 (Staff account).
+
#Log in to PECVD #1  
# Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
+
# Seasoning  
#* Seasoning recipe name
+
#* Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.  
#* Deposition recipe name
+
# Deposition
#* Cleaning recipe name:
+
#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
# Load the seasoning recipe, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.  
+
#* Pump down.  
# Vent the chamber and load a 4"Si wafer (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
+
#* Load the deposition recipe( SiO2@250C), and run it.
# Pump down.  
+
#* Unload the wafer.
# Load the deposition recipe, and run it.
+
# Cleaning
# Wait for deposition to be finished. Unload the wafer.
+
#* Wipe sidewall first with DI water, followed by IPA.  
# Wipe sidewall first with DI water, followed by IPA.  
+
#* Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
# Load recipe for cleaning. Edit the recipe and enter required time for cleaning.
+
#* Log out
# Log out
 

Revision as of 16:09, 22 April 2020

The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.The section bellow describes how to run standard recipes for SiN a,d SiO2 at 250C.

SiN @250C

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (SiN@250C), and run it.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

SiO2 @250C

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe( SiO2@250C), and run it.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
    • Log out