Difference between revisions of "PECVD1 Wafer Coating Process"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 2: Line 2:
  
 
=== SiN @250C ===
 
=== SiN @250C ===
The wafers are ordered from SVM. These are low particle count 4" Si wafer where particle count is very low <100.
+
# Log in to PECVD #1 (Staff account).
 
+
# Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
a) Log in to PECVD #1 (Staff account)
+
#* Seasoning recipe name
 
+
#* Deposition recipe name
b) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
+
#* Cleaning recipe name:
* Seasoning recipe name:
+
# Load the seasoning recipe, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.  
* Deposition recipe name:
+
# Vent the chamber and load a 4"Si wafer (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
* Cleaning recipe name:  
+
# Pump down.  
c) Load the recipe for seasoning, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.  
+
# Load the deposition recipe, and run it.
 
+
# Wait for deposition to be finished. Unload the wafer.
d) Vent the chamber and load 4"Si wafer (place in in the center of platen). You can place small pieces around, to protect wafer from moving
+
# Wipe sidewall first with DI water, followed by IPA.  
 
+
# Load recipe for cleaning. Edit the recipe and enter required time for cleaning.
e) Pump down and load the recipe for deposition.  
 
 
 
f) Edit the recipe for deposition, change the time ONLY.
 
 
 
g) Run deposition
 
 
 
h) Wait for deposition to be finished. Unload the wafer
 
 
 
i) Wipe sidewall first with water then with IPA.  
 
 
 
j) Load recipe for cleaning. Edit the recipe and enter required time for cleaning.
 
 
 
=== SiO2 @ 250C ===
 
The wafers are ordered from SVM. These are low particle count 4" Si wafer where particle count is very low <100.
 
 
 
 
a) Log in to PECVD #1 (Staff account)
 
a) Log in to PECVD #1 (Staff account)
  

Revision as of 21:12, 30 March 2020

The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.

SiN @250C

  1. Log in to PECVD #1 (Staff account).
  2. Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
    • Seasoning recipe name
    • Deposition recipe name
    • Cleaning recipe name:
  3. Load the seasoning recipe, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  4. Vent the chamber and load a 4"Si wafer (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
  5. Pump down.
  6. Load the deposition recipe, and run it.
  7. Wait for deposition to be finished. Unload the wafer.
  8. Wipe sidewall first with DI water, followed by IPA.
  9. Load recipe for cleaning. Edit the recipe and enter required time for cleaning.

a) Log in to PECVD #1 (Staff account)

b) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

  • Seasoning recipe name:
  • Deposition recipe name:
  • Cleaning recipe name:

c) Load the recipe for seasoning, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.

d) Vent the chamber and load 4"Si wafer (place in in the center of platen). You can place small pieces around, to protect wafer from moving

e) Pump down and load the recipe for deposition.

f) Edit the recipe for deposition, change the time ONLY.

g) Run deposition

h) Wait for deposition to be finished. Unload the wafer

i) Wipe sidewall first with water then with IPA.

j) Load recipe for cleaning. Edit the recipe and enter required time for cleaning.