Difference between revisions of "PECVD1 Wafer Coating Process"

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There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).
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The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.The section bellow describes how to run standard recipes for SiN a,d SiO2 at 250C.
  
   
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=== Standard Si3N4 (Silicon-Nitride) Deposition ===
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== SiN @250C ==
  
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  ⚫
==== SiN Deposition ====
 
# Log in to PECVD #1
 
# Log in to PECVD #1
 
# Seasoning
 
# Seasoning
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#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
  
#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
 
#* Pump down.
 
#* Pump down.
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#* Load the deposition recipe (SiN@250C), and run it.
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#* Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_1_.28PlasmaTherm_790.29 historical data].
 
#* Unload the wafer.
  
#* Unload the wafer.
 
# Cleaning
  
# Cleaning
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#* Wipe sidewall first with DI water, followed by IPA.
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#* Wipe sidewall first with DI water, followed by IPA.
 
#* Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
  
#* Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
 
#* Log out
  
#* Log out
   
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=== Standard Oxide, SiO2 (Silicon Dioxide) Deposition ===
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== SiO2 @250C ==
  
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  ⚫
==== SiO2 Deposition ====
 
#Log in to PECVD #1
 
#Log in to PECVD #1
 
# Seasoning
 
# Seasoning
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#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
  
#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
 
#* Pump down.
 
#* Pump down.
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#* Load the deposition recipe( SiO2@250C), and run it.
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#* Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|historical data]].
 
#* Unload the wafer.
  
#* Unload the wafer.
 
# Cleaning
  
# Cleaning

Latest revision as of 13:16, 10 December 2020

There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).

Standard Si3N4 (Silicon-Nitride) Deposition

SiN Deposition

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

Standard Oxide, SiO2 (Silicon Dioxide) Deposition

SiO2 Deposition

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
    • Log out
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