Difference between revisions of "PECVD1 Wafer Coating Process"

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There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).
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== SiN @250C ==
  
   
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=== Standard Si3N4 (Silicon-Nitride) Deposition ===
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== The wafers are ordered from SVM. These are low particle count 4" Si wafer where particle count is very low <100. ==
  
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a)Log in to PECVD #1 (Staff account)
  
   
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==== SiN Deposition ====
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b)Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
  
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# Log in to PECVD #1
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* •Seasoning recipe name:
 
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# Seasoning
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* •Deposition recipe name:
 
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#* Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
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* •Cleaning recipe name:
 
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# Deposition
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c)Load the recipe for seasoning, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
 
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#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
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#* Pump down.
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#* Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_1_.28PlasmaTherm_790.29 historical data].
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#* Unload the wafer.
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# Cleaning
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#* Wipe sidewall first with DI water, followed by IPA.
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#* Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
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#* Log out
   
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=== Standard Oxide, SiO2 (Silicon Dioxide) Deposition ===
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d)Vent the chamber and load 4"Si wafer (place in in the center of platen). You can place small pieces around, to protect wafer from moving
  
   
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==== SiO2 Deposition ====
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e)Pump down and load the recipe for deposition.
 
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#Log in to PECVD #1
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# Seasoning
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f) Edit the recipe for deposition, change the time ONLY.
  
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#* Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
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# Deposition
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g) Run deposition
  
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#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
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#* Pump down.
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h) Wait for deposition to be finished. Unload the wafer
  
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#* Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|historical data]].
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#* Unload the wafer.
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i) Wipe sidewall first with water then with IPA.
 
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# Cleaning
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#* Wipe sidewall first with DI water, followed by IPA.
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j) Load recipe for cleaning. Edit the recipe and enter required time for cleaning.
  
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#* Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
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#* Log out
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== SiO2 @ 250C==
  

Latest revision as of 13:16, 10 December 2020

There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).

Standard Si3N4 (Silicon-Nitride) Deposition

SiN Deposition

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

Standard Oxide, SiO2 (Silicon Dioxide) Deposition

SiO2 Deposition

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
    • Log out
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