PECVD1 Recipes

From UCSB Nanofab Wiki
Jump to navigation Jump to search

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

  • Deposition rate~11.23nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~89nm/min
  • Stress~450MPa
  • Refractive Index~1.942

SiO2 deposition (PECVD #1)

  • Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~645nm/min
  • Stress~-408MPa
  • Refractive Index~1.461

SiOxNy deposition (PECVD #1)

  • Deposition rate~14.99nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~417nm/min
  • Stress~133MPa
  • Refractive Index~1.714

LS SiN deposition (PECVD #1)

  • Deposition rate~14.99nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~417nm/min
  • Stress~133MPa
  • Refractive Index~1.714