Oxygen Plasma System Recipes

From UCSB Nanofab Wiki
Revision as of 21:00, 18 September 2018 by John d (talk | contribs) (→‎UV Ozone Reactor: added some basic info)
Jump to navigation Jump to search

Back to Dry Etching Recipes.

Ashers (Technics PEII)

CF4/O2 PEii

SiN Etching

  • Pressure = 300mT–350mT
  • Power = 100W
  • Etch Rate ≈ 50-100 nm/min. Varies.

Chamber Clean after CF4 Etching

  • Pressure = 300mT–350mT
  • Power = 300W
  • Time = 10min
  • Set power back to 100W before shutting off plasma!

Plasma Clean (Gasonics 2000)

Recipes are posted at the tool, with photoresist etch rates.

UV Ozone Reactor

The UV Ozone Reactor is used for two purposes:

  • Etch away organic residue with no ion bombardment
  • Oxidize surface (monolayers) of a substrate, which has been used for
    • Providing a wet-etchable sacrifical surface layer which is removed prior to deposition or regrowth
    • Controlled digital etching, by wet etching the oxide and then repeating the oxidation/etch cycle.

Plasma Activation (EVG 810)

O2 and N2 plasma activation recipes are available on this tool.