Oxygen Plasma System Recipes

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Back to Dry Etching Recipes.

Ashers (Technics PEII)

CF4/O2 PEii

SiN Etching

Pressure = 300mT–350mT
Power = 100W
Etch Rate ≈ 50-100 nm/min. Varies.

Chamber Clean after CF4 Etching

Pressure = 300mT–350mT
Power = 300W
Time = 10min
Set power back to 100W before shutting off plasma!

Plasma Clean (Gasonics 2000)

UV Ozone Reactor

Plasma Activation (EVG 810)

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Recipes