Difference between revisions of "Oxygen Plasma System Recipes"

Revision as of 00:37, 21 January 2021

Gas is CF₄ / O₂ (88%/12%)

O2; 300mT / 100W - on either Technics asher.

~15sec to make a surface hydrophilic, eg. before wet etching or applying photoreist.

~30-120sec to improve wirebonding pad metal prior to deposition of liftoff metal.

~1-5min to remove polymerized photoresist/scum after dry etching

~5-10min to strip ~0.5-1.0µm photoresist. Rotate wafer 180° halfway through etch. Optionally increase to 200W for faster etching.

Use glass slides to prevent wafers from sliding on platen.

Recipes are posted at the tool, with photoresist etch rates.

The UV Ozone Reactor is used for two purposes:

Etch away organic residue with no ion bombardment
Oxidize surface (monolayers) of a substrate, which has been used for
- Providing a wet-etchable sacrifical surface layer which is removed prior to deposition or regrowth
- Controlled digital etching, by wet etching the oxide and then repeating the oxidation/etch cycle.

O2 and N2 plasma activation recipes are available on this tool.

These are the qualified recipes provided by EVG and will not require adjustment of the RF Match:

@@ Line 27: / Line 27: @@
 ~1-5min to remove polymerized photoresist/scum after dry etching
-~5-8min to strip ~0.5µm photoresist.  Rotate wafer 180° halfway through etch. Optionally increase to 200W for faster etching.
+~5-10min to strip ~0.5-1.0µm photoresist.  Rotate wafer 180° halfway through etch. Optionally increase to 200W for faster etching.
 Use glass slides to prevent wafers from sliding on platen.