Difference between revisions of "Oxford ICP Etcher - Process Control Data"
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m (updated images) |
m (updated etch rates and selectivity) |
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|1/26/22 |
|1/26/22 |
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|<small>NP_1_26_001</small> |
|<small>NP_1_26_001</small> |
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+ | |~400nm |
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− | |374 |
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+ | |240 nm left |
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− | | |
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+ | |~30-40% SiO<sub>2</sub> masking (NingC's pattern) |
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− | | |
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|[https://wiki.nanotech.ucsb.edu/w/images/d/dc/Oxford_Cal_1_26_22_001_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/Oxford_Cal_1_26_22_001_CS_004.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/d/dc/Oxford_Cal_1_26_22_001_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/Oxford_Cal_1_26_22_001_CS_004.jpg <nowiki>[2]</nowiki>] |
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|1/26/22 |
|1/26/22 |
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|NP_1_26_003 |
|NP_1_26_003 |
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− | | |
+ | |452 |
+ | |260-280nm left |
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− | | |
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+ | |~30-40% SiO<sub>2</sub> masking (NingC's pattern) |
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− | |Better images will taken soon |
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|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>] |
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|Sample Size (dimensions, mm) |
|Sample Size (dimensions, mm) |
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|Sample Size (area, mm<sup>2</sup>) |
|Sample Size (area, mm<sup>2</sup>) |
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− | |Etch Rate ( |
+ | |Etch Rate (nm/min) |
|Etch Selectivity (InP/SiO2) |
|Etch Selectivity (InP/SiO2) |
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|Comments |
|Comments |
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|4.5 x 2.5 |
|4.5 x 2.5 |
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|11.25 |
|11.25 |
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− | | |
+ | |602 |
|64.6nm left |
|64.6nm left |
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|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small> |
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small> |
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|4.5 x 3 |
|4.5 x 3 |
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|13.5 |
|13.5 |
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− | | |
+ | |563 |
|76.4nm left |
|76.4nm left |
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|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small> |
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small> |
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|4.5 x 3 |
|4.5 x 3 |
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|13.5 |
|13.5 |
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− | | |
+ | |612 |
|71nm left |
|71nm left |
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|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small> |
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small> |
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|10 x 10 |
|10 x 10 |
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|100 |
|100 |
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+ | |400-450 |
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− | | |
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+ | |~250nm left |
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− | | |
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|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small> |
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small> |
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|1/4 of 50mm wafer |
|1/4 of 50mm wafer |
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|490 |
|490 |
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− | | |
+ | |48028-0.46 |
− | | |
+ | |276nm left |
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small> |
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small> |
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|[https://wiki.nanotech.ucsb.edu/w/images/9/94/Oxford_Etch_InP_Cal_SEM_-_quarter_wafer_-_CS_005.jpg <nowiki>[1]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/Oxford_Etch_InP_Cal_SEM_-_quarter_wafer_-_CS_005.jpg <nowiki>[1]</nowiki>] |
Revision as of 08:31, 15 February 2022
Data - InP Ridge Etch (Oxford ICP Etcher)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/26/22 | NP_1_26_001 | ~400nm | 240 nm left | ~30-40% SiO2 masking (NingC's pattern) | [1] [2] |
1/26/22 | NP_1_26_003 | 452 | 260-280nm left | ~30-40% SiO2 masking (NingC's pattern) | [1] [2] |
Dependence on Sample Size
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive. | |||||||
Date | Sample# | Sample Size (dimensions, mm) | Sample Size (area, mm2) | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/11/22 | DJ_InPRidge | 4.5 x 2.5 | 11.25 | 602 | 64.6nm left | ~50% SiO2 masking (GCA Calibration pattern) | [1] |
1/12/22 | DJ_InPRidge | 4.5 x 3 | 13.5 | 563 | 76.4nm left | ~50% SiO2 masking (GCA Calibration pattern) | [2] |
1/12/22 | DJ_InP#3 | 4.5 x 3 | 13.5 | 612 | 71nm left | ~50% SiO2 masking (GCA Calibration pattern) | [3] |
1/26/22 | NP_? | 10 x 10 | 100 | 400-450 | ~250nm left | ~30-40% SiO2 masking (NingC's pattern) | |
1/26/22 | NP_? | 1/4 of 50mm wafer | 490 | 48028-0.46 | 276nm left | ~30-40% SiO2 masking (NingC's pattern) | [1] |