Difference between revisions of "Oxford ICP Etcher - Process Control Data"
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Revision as of 11:11, 8 February 2022
Data - InP Ridge Etch (Oxford ICP Etcher)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/26/22 | NP_1_26_001 | 374 | [1] [2] | ||
1/26/22 | NP_1_26_003 | 362 | Better images will taken soon | [1] [2] |
Dependence on Sample Size
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive. | |||||||
Date | Sample# | Sample Size (dimensions, mm) | Sample Size (area, mm2) | Etch Rate (um/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/11/22 | DJ_InPRidge | 4.5 x 2.5 | 11.25 | 0.602 | 64.6nm left | ~50% SiO2 masking (GCA Calibration pattern) | [1] |
1/12/22 | DJ_InPRidge | 4.5 x 3 | 13.5 | 0.563 | 76.4nm left | ~50% SiO2 masking (GCA Calibration pattern) | [2] |
1/12/22 | DJ_InP#3 | 4.5 x 3 | 13.5 | 0.612 | 71nm left | ~50% SiO2 masking (GCA Calibration pattern) | [3] |
1/26/22 | NP_? | 10 x 10 | 100 | ~30-40% SiO2 masking (NingC's pattern) | |||
1/26/22 | NP_? | 1/4 of 50mm wafer | 490 | 0.428-0.46 | 428nm left | ~30-40% SiO2 masking (NingC's pattern) | [1] |