Difference between revisions of "Oxford ICP Etcher - Process Control Data"
Jump to navigation
Jump to search
(added SEM images for Jan 11th-12th cals) |
m (removed WIP) |
||
| Line 1: | Line 1: | ||
==Data - InP Ridge Etch (Oxford ICP Etcher)== |
==Data - InP Ridge Etch (Oxford ICP Etcher)== |
||
| − | <br /> |
||
| − | {{WIP}} |
||
{| class="wikitable" |
{| class="wikitable" |
||
| colspan="6" |'''InP Ridge Etch''': 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) |
| colspan="6" |'''InP Ridge Etch''': 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) |
||
| Line 29: | Line 27: | ||
|<small>DJ_Cal03</small> |
|<small>DJ_Cal03</small> |
||
|0.612 |
|0.612 |
||
| − | | |
+ | |71nm left |
| |
| |
||
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf] |
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf] |
||
Revision as of 23:05, 13 January 2022
Data - InP Ridge Etch (Oxford ICP Etcher)
| InP Ridge Etch: 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
| 1/11/22 | DJ_Cal | 0.602 | 64.6nm left | Software timing bugs fixed - new etch rate will appear slightly higher. | [1] |
| 1/12/22 | DJ_Cal02 | 0.563 | 76.4nm left | [2] | |
| 1/12/22 | DJ_Cal03 | 0.612 | 71nm left | [3] | |