Difference between revisions of "Oxford ICP Etcher - Process Control Data"

Revision as of 22:51, 13 January 2022

Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.

InP Ridge Etch: 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (InP/SiO2)	Comments	SEM Images
1/11/22	DJ_Cal	0.602	64.6nm left	Software timing bugs fixed - new etch rate will appear slightly higher.	[1]
1/12/22	DJ_Cal02	0.563	76.4nm left		[2] (wrong)
1/12/22	DJ_Cal03	0.612	80.1nm left		[3] (wrong)

@@ Line 3: / Line 3: @@
 {{WIP}}
 {| class="wikitable"
-| colspan="5" |InP Ridge Etch:  INSERT ETCH PARAMS (IPC< Pressure, gasses etc.)
+| colspan="6" |'''InP Ridge Etch''':  3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
-|
 |-
 |Date
@@ Line 13: / Line 12: @@
 |SEM Images
 |-
-|2022-01-11
+|1/11/22
+|<small>DJ_Cal</small>
-|
+|0.602
-|
+|64.6nm left
-|
-|Software timing bugs fixed - new etch rate appears slightly higher.
+|Software timing bugs fixed - new etch rate will appear slightly higher.
-|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf] (wrong)
+|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
 |-
+|1/12/22
-|2022-01-11
+|<small>DJ_Cal02</small>
-|
+|0.563
-|
+|76.4nm left
-|
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]  (wrong)
 |-
+|1/12/22
-|2022-01-21
+|<small>DJ_Cal03</small>
-|
+|0.612
-|
+|80.1nm left
-|
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]  (wrong)