Difference between revisions of "Oxford ICP Etcher - Process Control Data"

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(in progress InP Ridge Etch)
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{{WIP}}
 
{{WIP}}
 
{| class="wikitable"
 
{| class="wikitable"
| colspan="5" |InP Ridge Etch:  INSERT ETCH PARAMS (IPC< Pressure, gasses etc.)
+
| colspan="6" |'''InP Ridge Etch'''3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
|
 
 
|-
 
|-
 
|Date
 
|Date
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|SEM Images
 
|SEM Images
 
|-
 
|-
|2022-01-11
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|1/11/22
|
+
|<small>DJ_Cal</small>
|
+
|0.602
|
+
|64.6nm left
|Software timing bugs fixed - new etch rate appears slightly higher.
+
|Software timing bugs fixed - new etch rate will appear slightly higher.
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf] (wrong)
+
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
 
|-
 
|-
|2022-01-11
+
|1/12/22
|
+
|<small>DJ_Cal02</small>
|
+
|0.563
|
+
|76.4nm left
 
|
 
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]  (wrong)
 
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]  (wrong)
 
|-
 
|-
|2022-01-21
+
|1/12/22
|
+
|<small>DJ_Cal03</small>
|
+
|0.612
|
+
|80.1nm left
 
|
 
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]  (wrong)
 
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]  (wrong)
 
|}<br />
 
|}<br />

Revision as of 21:51, 13 January 2022

Data - InP Ridge Etch (Oxford ICP Etcher)


UnderConstruction.jpg

Work In Progress

This article is still under construction. It may contain factual errors. Content is subject to change.


InP Ridge Etch: 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
1/11/22 DJ_Cal 0.602 64.6nm left Software timing bugs fixed - new etch rate will appear slightly higher. [1]
1/12/22 DJ_Cal02 0.563 76.4nm left [2] (wrong)
1/12/22 DJ_Cal03 0.612 80.1nm left [3] (wrong)