Difference between revisions of "Oxford ICP Etcher - Process Control Data"

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==Data - InP Ridge Etch (Oxford ICP Etcher)==
 
==Data - InP Ridge Etch (Oxford ICP Etcher)==
<br />
+
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
{{WIP}}
 
 
{| class="wikitable"
 
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''':  3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
+
| colspan="6" |'''InP Ridge Etch''':  60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
 +
<u>Sample Size</u>: 2” unpatterned InP wafer “dummy” pieces, surrounding 1x1cm patterned sample, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive.
 +
 
 +
<u>Seasoning</u>: 10min “Std Clean - O2/SF6 Chamber Clean 20C (Edit Time)”, then load 2” “dummy” unpatterned InP wafer pieces on Si carrier (rough side up) and run 5min of “Std InP Ridge Etch - Cl2/CH4/H2 60C” 
 +
 
 +
<u>Sample Prep</u>: Prior to dry etching, the sample is submerged in NH4OH:DI solution (XYZ:XYZ) for XYZ min, then DI rinsed and N2 dried. 
 
|-
 
|-
|Date
+
!'''Date'''
|Sample#
+
!'''Sample#'''
|Etch  Rate (nm/min)
+
!'''Etch  Rate (nm/min)'''
|Etch  Selectivity (InP/SiO2)
+
!'''Etch  Selectivity (InP/SiO2)'''
|Comments
+
!'''Comments'''
|SEM Images
+
!'''SEM Images'''
 +
|-
 +
|8/1/22
 +
|ND_60c_080122
 +
|298
 +
|9.9
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/CS_002.jpg <nowiki>[CS]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/82/45D_001.jpg <nowiki>[45D]</nowiki>]
 +
|-
 +
|7/1/22
 +
|ND_60c_070122
 +
|294
 +
|11.9
 +
|Did not dip in NH4OH
 +
|[https://wiki.nanotech.ucsb.edu/w/images/6/65/45D_001_8-1-22.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/fb/A734DC5E-639E-4FDC-8F30-6F463470BC27.jpeg <nowiki>[CS]</nowiki>]
 +
|-
 +
|5/19/22
 +
|DJ_60c_007
 +
|326
 +
|TBA
 +
|After chamber vented, cleaned (wet + dry).  Forgot NH<sub>4</sub>OH wet-etch before dry etch.  ER and profile look nominal.
 +
|[[Media:Oxford InP 60C 45DEG02.jpg|[45°1]]],[[Media:Oxford InP 60C 45DEG05.jpg|[45°2]]]
 +
[[Media:Oxford InP 60C XS05.jpg|[XS]]]
 +
|-
 +
|5/11/22
 +
|NP_60c_010
 +
|322
 +
|9.76
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_10_45D_003.jpg <nowiki>[45°]</nowiki>]
 +
[https://wiki.nanotech.ucsb.edu/w/images/a/aa/Oxford_60c_10_CS_008.jpg <nowiki>[XS]</nowiki>]
 +
|-
 +
|5/4/22
 +
|NP_60c_009
 +
|318
 +
|10.5
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/e/e8/InP_Oxford_60c_09_45D_005.jpg <nowiki>[45°]</nowiki>]
 +
[https://wiki.nanotech.ucsb.edu/w/images/3/3a/InP_Oxford_60c_09_CS_005.jpg <nowiki>[XS]</nowiki>]
 +
|-
 +
|4/27/22
 +
|NP_60c_008
 +
|320
 +
|9.2
 +
|directly after chamber clean. Identical results to before chamber clean.  Chamber appeared clean when opened.
 +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b4/Oxford_60c_08_45D_003.jpg <nowiki>[45°]</nowiki>]
 +
[https://wiki.nanotech.ucsb.edu/w/images/8/8d/Oxford_60c_08_CS_009.jpg <nowiki>[XS]</nowiki>]
 +
|-
 +
|4/26/22
 +
|NP_60c_007
 +
|312
 +
|9.93
 +
|day before chamber clean
 +
|[https://wiki.nanotech.ucsb.edu/w/images/6/66/Oxford_60c_07_45D_002.jpg <nowiki>[45°]</nowiki>]
 +
[https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_07_CS_001.jpg <nowiki>[XS]</nowiki>]
 +
|-
 +
|4/19/22
 +
|NP_60c_006
 +
|330
 +
|9.53
 +
|Chamber opened and brown gunk observed in chamber right after the etch was done. Etch rate unaffected.
 +
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/Oxford_60c_06_45D_002.jpg <nowiki>[45°]</nowiki>]
 +
[https://wiki.nanotech.ucsb.edu/w/images/7/7d/Oxford_60c_06_CS_005.jpg <nowiki>[XS]</nowiki>]
 +
|-
 +
|4/13/22
 +
|NP_60c_005
 +
|320
 +
|11.51
 +
|New mask pattern with long lines to cleave through.
 +
|[https://wiki.nanotech.ucsb.edu/w/images/1/12/Oxford_60c_05_45D_004.jpg <nowiki>[45°]</nowiki>]
 +
[https://wiki.nanotech.ucsb.edu/w/images/5/56/Oxford_60c_05_CS_002.jpg <nowiki>[XS]</nowiki>]
 +
|-
 +
!
 +
!
 +
!
 +
!
 +
|''↑ Changed mask pattern going forward (~50% open area), apparent etch rate changes due to measuring different features.''
 +
!
 +
|-
 +
|3/30/22
 +
|NP_60c_004
 +
|427
 +
|11.17
 +
|*etched for 3min*
 +
~30-40% SiO<sub>2</sub> masking (NingC's pattern)
 +
|[https://wiki.nanotech.ucsb.edu/w/images/8/8a/Oxford_60c_04_45D_001.jpg <nowiki>[45°]</nowiki>]
 +
[https://wiki.nanotech.ucsb.edu/w/images/0/0a/Oxford_60c_04_CS_004.jpg <nowiki>[XS]</nowiki>]
 +
|-
 +
|1/26/22
 +
|NP_1_26_003
 +
|452
 +
|12.9
 +
|~30-40% SiO<sub>2</sub> masking (NingC's pattern)
 +
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[45°]</nowiki>]
 +
[https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[XS]</nowiki>]
 +
|}
 +
 
 +
===Dependence on Sample Size===
 +
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
 +
{| class="wikitable"
 +
| colspan="8" |'''InP Ridge Etch''':  60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
 +
Silicon carrier, no adhesive.
 +
|-
 +
!Date
 +
!Sample#
 +
!Sample Size (dimensions, mm)
 +
!Sample Size (area, mm<sup>2</sup>)
 +
!Etch  Rate (nm/min)
 +
!Etch  Selectivity (InP/SiO2)
 +
!Comments
 +
!SEM Images
 
|-
 
|-
 
|1/11/22
 
|1/11/22
|<small>DJ_Cal</small>
+
|<small>DJ_InPRidge</small>
|0.602
+
|4.5 x 2.5
 +
|11.25
 +
|602
 
|64.6nm left
 
|64.6nm left
|Software timing bugs fixed - new etch rate will appear slightly higher.
+
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
 
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
 
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
 
|-
 
|-
 
|1/12/22
 
|1/12/22
|<small>DJ_Cal02</small>
+
|<small>DJ_InPRidge</small>
|0.563
+
|4.5 x 3
 +
|13.5
 +
|563
 
|76.4nm left
 
|76.4nm left
|
+
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
 
|[https://wiki.nanotech.ucsb.edu/w/images/d/d1/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal02.pdf]
 
|[https://wiki.nanotech.ucsb.edu/w/images/d/d1/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal02.pdf]
 
|-
 
|-
 
|1/12/22
 
|1/12/22
|<small>DJ_Cal03</small>
+
|<small>DJ_InP#3</small>
|0.612
+
|4.5 x 3
|80.1nm left
+
|13.5
 +
|612
 +
|71nm left
 +
|<small>~50% SiO<sub>2</sub> masking (GCA Calibration pattern)</small>
 +
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
 +
|-
 +
|1/26/22
 +
|<small>NP_?</small>
 +
|10 x 10
 +
|100
 +
|400-450
 +
|~250nm left
 +
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small>
 
|
 
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
+
|-
|}<br />
+
|1/26/22
 +
|<small>NP_?</small>
 +
|1/4 of 50mm wafer
 +
|490
 +
|378
 +
|276nm left
 +
|<small>~30-40% SiO<sub>2</sub> masking (NingC's pattern)</small>
 +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c5/Oxford_Cal_01_26_22_New002_CS_002.jpg <nowiki>[1]</nowiki>]
 +
|}

Revision as of 17:25, 12 August 2022

Data - InP Ridge Etch (Oxford ICP Etcher)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)

Sample Size: 2” unpatterned InP wafer “dummy” pieces, surrounding 1x1cm patterned sample, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.

Seasoning: 10min “Std Clean - O2/SF6 Chamber Clean 20C (Edit Time)”, then load 2” “dummy” unpatterned InP wafer pieces on Si carrier (rough side up) and run 5min of “Std InP Ridge Etch - Cl2/CH4/H2 60C”

Sample Prep: Prior to dry etching, the sample is submerged in NH4OH:DI solution (XYZ:XYZ) for XYZ min, then DI rinsed and N2 dried.

Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
8/1/22 ND_60c_080122 298 9.9 [CS] [45D]
7/1/22 ND_60c_070122 294 11.9 Did not dip in NH4OH [45D] [CS]
5/19/22 DJ_60c_007 326 TBA After chamber vented, cleaned (wet + dry). Forgot NH4OH wet-etch before dry etch. ER and profile look nominal. [45°1],[45°2]

[XS]

5/11/22 NP_60c_010 322 9.76 [45°]

[XS]

5/4/22 NP_60c_009 318 10.5 [45°]

[XS]

4/27/22 NP_60c_008 320 9.2 directly after chamber clean. Identical results to before chamber clean. Chamber appeared clean when opened. [45°]

[XS]

4/26/22 NP_60c_007 312 9.93 day before chamber clean [45°]

[XS]

4/19/22 NP_60c_006 330 9.53 Chamber opened and brown gunk observed in chamber right after the etch was done. Etch rate unaffected. [45°]

[XS]

4/13/22 NP_60c_005 320 11.51 New mask pattern with long lines to cleave through. [45°]

[XS]

↑ Changed mask pattern going forward (~50% open area), apparent etch rate changes due to measuring different features.
3/30/22 NP_60c_004 427 11.17 *etched for 3min*

~30-40% SiO2 masking (NingC's pattern)

[45°]

[XS]

1/26/22 NP_1_26_003 452 12.9 ~30-40% SiO2 masking (NingC's pattern) [45°]

[XS]

Dependence on Sample Size

We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.

InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)

Silicon carrier, no adhesive.

Date Sample# Sample Size (dimensions, mm) Sample Size (area, mm2) Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
1/11/22 DJ_InPRidge 4.5 x 2.5 11.25 602 64.6nm left ~50% SiO2 masking (GCA Calibration pattern) [1]
1/12/22 DJ_InPRidge 4.5 x 3 13.5 563 76.4nm left ~50% SiO2 masking (GCA Calibration pattern) [2]
1/12/22 DJ_InP#3 4.5 x 3 13.5 612 71nm left ~50% SiO2 masking (GCA Calibration pattern) [3]
1/26/22 NP_? 10 x 10 100 400-450 ~250nm left ~30-40% SiO2 masking (NingC's pattern)
1/26/22 NP_? 1/4 of 50mm wafer 490 378 276nm left ~30-40% SiO2 masking (NingC's pattern) [1]