Difference between revisions of "Oxford ICP Etcher - Process Control Data"
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==Data - InP Ridge Etch (Oxford ICP Etcher)== |
==Data - InP Ridge Etch (Oxford ICP Etcher)== |
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| + | [[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
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| − | | colspan="6" |'''InP Ridge Etch''': 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) |
+ | | colspan="6" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) |
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Revision as of 23:09, 13 January 2022
Data - InP Ridge Etch (Oxford ICP Etcher)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
| InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec) | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
| 1/11/22 | DJ_Cal | 0.602 | 64.6nm left | Software timing bugs fixed - new etch rate will appear slightly higher. | [1] |
| 1/12/22 | DJ_Cal02 | 0.563 | 76.4nm left | [2] | |
| 1/12/22 | DJ_Cal03 | 0.612 | 71nm left | [3] | |