Difference between revisions of "Oxford ICP Etcher - Process Control Data"

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==Data - InP Ridge Etch (Oxford ICP Etcher)==
 
==Data - InP Ridge Etch (Oxford ICP Etcher)==
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[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
 
{| class="wikitable"
 
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''':  3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
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| colspan="6" |'''InP Ridge Etch''':  60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
 
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|Date
 
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Revision as of 23:09, 13 January 2022

Data - InP Ridge Etch (Oxford ICP Etcher)

PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1

InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
1/11/22 DJ_Cal 0.602 64.6nm left Software timing bugs fixed - new etch rate will appear slightly higher. [1]
1/12/22 DJ_Cal02 0.563 76.4nm left [2]
1/12/22 DJ_Cal03 0.612 71nm left [3]