Difference between revisions of "Oxford ICP Etcher - Process Control Data"

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(added SEM images for Jan 11th-12th cals)
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==Data - InP Ridge Etch (Oxford ICP Etcher)==
 
==Data - InP Ridge Etch (Oxford ICP Etcher)==
<br />
 
{{WIP}}
 
 
{| class="wikitable"
 
{| class="wikitable"
 
| colspan="6" |'''InP Ridge Etch''':  3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
 
| colspan="6" |'''InP Ridge Etch''':  3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
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|<small>DJ_Cal03</small>
 
|<small>DJ_Cal03</small>
 
|0.612
 
|0.612
|80.1nm left
+
|71nm left
 
|
 
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
 
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
 
|}<br />
 
|}<br />

Revision as of 23:05, 13 January 2022

Data - InP Ridge Etch (Oxford ICP Etcher)

InP Ridge Etch: 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Date Sample# Etch Rate (nm/min) Etch Selectivity (InP/SiO2) Comments SEM Images
1/11/22 DJ_Cal 0.602 64.6nm left Software timing bugs fixed - new etch rate will appear slightly higher. [1]
1/12/22 DJ_Cal02 0.563 76.4nm left [2]
1/12/22 DJ_Cal03 0.612 71nm left [3]