Difference between revisions of "Oxford ICP Etcher - Process Control Data"
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(pasted ICP2 data table) |
(in progress InP Ridge Etch) |
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+ | ==Data - InP Ridge Etch (Oxford ICP Etcher)== |
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| + | {{WIP}} |
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| − | | colspan="5" | |
+ | | colspan="5" |InP Ridge Etch: INSERT ETCH PARAMS (IPC< Pressure, gasses etc.) |
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|Sample# |
|Sample# |
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|Etch Rate (nm/min) |
|Etch Rate (nm/min) |
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| − | |Etch Selectivity ( |
+ | |Etch Selectivity (InP/SiO2) |
| + | |Comments |
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| − | |Averaged Sidewall Angle (<sup>o</sup>) |
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|SEM Images |
|SEM Images |
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| + | |2022-01-11 |
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| − | |10/5/2018 |
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| − | |SiO2#02 |
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| − | |160 |
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| − | |1.2 |
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| − | |82.1 |
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| ⚫ | |||
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| − | |1/28/2019 |
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| − | |I21901 |
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| − | |146 |
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| − | |1.23 |
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| ⚫ | |||
| ⚫ | |||
| − | |3/6/2019 |
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| − | |I21904 |
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| − | |151 |
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| − | |1.23 |
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| − | |85.6 |
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| ⚫ | |||
| ⚫ | |||
| − | |7/18/2019 |
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| − | |I21905 |
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| − | |162 |
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| − | |1.37 |
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| ⚫ | |||
| − | |[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf] |
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| + | |Software timing bugs fixed - new etch rate appears slightly higher. |
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| + | |2022-01-11 |
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| − | |1/16/2020 |
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| − | |I22001 |
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| − | |149 |
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| − | |1.21 |
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| ⚫ | |||
| − | |[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf] |
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| ⚫ | |||
| ⚫ | |||
| ⚫ | |||
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| + | |2022-01-21 |
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| − | |8/9/2020 |
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| − | |I22002 |
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| − | |102 |
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| − | |0.86 |
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| − | |caused by air leaking to CHF3 channel |
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| − | |[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf] |
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| ⚫ | |||
| − | |1/7/2021 |
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| − | |I22101 |
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| − | |144 |
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| − | |1.20 |
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| ⚫ | |||
| − | |[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf] |
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| − | | |
+ | | |
| ⚫ | |||
| − | |5/19/2021 |
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| ⚫ | |||
| − | |I22102 |
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| − | |163 |
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| − | |1.11 |
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| − | |Etch time=130 sec |
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| − | |[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf] |
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| ⚫ | |||
| − | |7/21/2021 |
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| − | |I22103 |
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| − | |134 |
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| − | |1.09 |
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| − | |Investigating reports of low etch rate |
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| − | |[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf] |
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| ⚫ | |||
| − | |8/9/2021 |
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| − | |I22104 |
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| − | |147 |
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| − | |1.06 |
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| − | |Before etching diamond sample for 1 hour using Cl2/Ar |
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| − | |[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf] |
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| − | |- |
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| − | |8/9/2021 |
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| − | |I22105 |
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| − | |140 |
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| − | |0.97 |
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| − | |After etching diamond sample for 1 hour using Cl2/Ar |
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| − | |[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf] |
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Revision as of 14:24, 13 January 2022
Data - InP Ridge Etch (Oxford ICP Etcher)
 Work In Progress This article is still under construction. It may contain factual errors. Content is subject to change. |
| InP Ridge Etch: INSERT ETCH PARAMS (IPC< Pressure, gasses etc.) | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
| 2022-01-11 | Software timing bugs fixed - new etch rate appears slightly higher. | [1] (wrong) | |||
| 2022-01-11 | [2] (wrong) | ||||
| 2022-01-21 | [3] (wrong) | ||||