Difference between revisions of "Oxford ICP Etcher (PlasmaPro 100 Cobra)"

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*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]
*Online Training Video:
*Online Training Video:
**[G:\Shared drives\NanoFab Equipment Group\Nanofab Equip Standard Operating Procedures\3.0  Dry Etch\3.18  Oxford PlasmaPro 100 Cobra 300\Training Video\Oxford Plasma Pro 100 Cobra 300 Training Video 2.mp4 <u>Oxford Cobra 300 Training</u>]
**[ <u>Oxford Cobra 300 Training</u>]
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

Revision as of 09:22, 4 January 2022

Oxford ICP Etcher (PlasmaPro 100 Cobra)
Tool Type Dry Etch
Location Bay 2
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description ICP Etches for III-V/ALE
Manufacturer Oxford Instruments
Model PlasmaPro 100 Cobra 300
Materials InP, GaAs, GaN, Silicon ALE
Dry Etch Recipes


The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers.

The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. The system also has an in situ optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.

Detailed Specifications

  • Temperature Range: –150°C to +400°C
  • Gases Available: CH4, H2, Ar, Cl2, BCl3, SF6, SiCl4, O2, N2
  • ICP Power (max): 3000 W
  • RF Power (max): 600 W
  • He-back-side cooling
  • 100mm wafer held down with ceramic clamp., single-load
    • Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
    • Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
  • Windows-based Cortex software control of process and wafer handling
  • Allowed Materials:
    • InP-based epitaxies - qualified and ready
    • GaAs-baased epitaxies - discuss with staff
    • GaN-based epitaxies - discuss with staff
    • GaSb-based epitaxies - discuss with staff
    • Atomic Layer Etching on select materials - discuss with staff
  • Standard masking materials include:
    • SiO2
    • Si3N4
    • photoresist (at << 100°C).

Other materials can be exposed to the chamber only with staff approval.

  • Laser monitoring with camera and etch simulation software: Intellemetrics LEP 500
  • Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software