Difference between revisions of "Oxford ICP Etcher (PlasmaPro 100 Cobra)"

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(→‎Recipes: corrected link to recipes)
(→‎Detailed Specifications: added image, notes on substrate materials "discuss with staff")
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*ICP Power: ??? W
 
*ICP Power: ??? W
 
*RF Power: ??? W
 
*RF Power: ??? W
*Temperature Rnage: –40°C to +400°C
+
*Temperature Range: –40°C to +400°C
 
*Gases Available: ** CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub>
 
*Gases Available: ** CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub>
 
*He-back-side cooling
 
*He-back-side cooling
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*Windows-based Cortex software control of process and wafer handling
 
*Windows-based Cortex software control of process and wafer handling
 
*Allowed Materials:
 
*Allowed Materials:
**InP-based epitaxies
+
**InP-based epitaxies - ''qualified and ready''
**GaAs-baased epitaxies
+
**GaAs-baased epitaxies - ''discuss with staff''
**GaN-based epitaxies
+
**GaN-based epitaxies - ''discuss with staff''
 +
**GaSb-based epitaxies - ''discuss with staff''
 
**Silicon only for ALE (no deep etching)
 
**Silicon only for ALE (no deep etching)
 
*Standard masking materials include:
 
*Standard masking materials include:

Revision as of 09:45, 29 September 2021

Oxford ICP Etcher (PlasmaPro 100 Cobra)
OxfordPlasmaPro.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Tony Bosch
Supervisor Phone (805) 893-3486
Supervisor E-Mail bosch@ece.ucsb.edu
Description ICP Etches for III-V/ALE
Manufacturer Oxford Instruments
Model PlasmaPro 100 Cobra 300
Materials InP, GaAs, GaN, Silicon ALE
Dry Etch Recipes


About

The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers.

The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. The system also has an in situ optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.

Detailed Specifications

  • ICP Power: ??? W
  • RF Power: ??? W
  • Temperature Range: –40°C to +400°C
  • Gases Available: ** CH4, H2, Ar, Cl2, BCl3, SF6, SiCl4, O2, N2
  • He-back-side cooling
  • 100mm wafer held down with ceramic clamp., single-load
    • Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
    • Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
  • Windows-based Cortex software control of process and wafer handling
  • Allowed Materials:
    • InP-based epitaxies - qualified and ready
    • GaAs-baased epitaxies - discuss with staff
    • GaN-based epitaxies - discuss with staff
    • GaSb-based epitaxies - discuss with staff
    • Silicon only for ALE (no deep etching)
  • Standard masking materials include:
    • SiO2
    • Si3N4
    • photoresist (at << 100°C).

Other materials can be exposed to the chamber only with staff approval.

Documentation

Recipes