Difference between revisions of "Oxford ICP Etcher (PlasmaPro 100 Cobra)"
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+ | ==About== |
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. |
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. |
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The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection. |
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection. |
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− | == |
+ | ==Detailed Specifications== |
*ICP Power: ??? W |
*ICP Power: ??? W |
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− | * |
+ | *RF Power: ??? W |
− | * |
+ | *Temperature Rnage: –40°C to +400°C |
*Gases Available: ** CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub> |
*Gases Available: ** CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub> |
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− | *He-back-side cooling |
+ | *He-back-side cooling |
*100mm wafer held down with ceramic clamp., single-load |
*100mm wafer held down with ceramic clamp., single-load |
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− | **Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive. |
+ | **Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive. |
− | ** |
+ | **Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism. |
− | *Windows-based Cortex software control of process and wafer handling |
+ | *Windows-based Cortex software control of process and wafer handling |
− | * |
+ | *Allowed Materials: |
− | ** |
+ | **InP-based epitaxies |
− | ** |
+ | **GaAs-baased epitaxies |
− | ** |
+ | **GaN-based epitaxies |
− | ** |
+ | **Silicon only for ALE (no deep etching) |
− | * |
+ | *Standard masking materials include: |
− | ** |
+ | **SiO<sub>2</sub> |
− | ** |
+ | **Si<sub>3</sub>N<sub>4</sub> |
− | ** |
+ | **photoresist (at << 100°C). |
+ | |||
Other materials can be exposed to the chamber only with staff approval. |
Other materials can be exposed to the chamber only with staff approval. |
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+ | |||
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]] |
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]] |
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==Documentation== |
==Documentation== |
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+ | |||
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}} |
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}} |
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*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]] |
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]] |
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− | == |
+ | ==Recipes== |
+ | |||
− | * [https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#xyzxyz '''Oxford PlasmaPro Recipes'''] - Recipes specific to this tool. |
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− | * |
+ | *'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool. |
+ | *All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials. |
Revision as of 15:00, 3 September 2021
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About
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers.
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. The system also has an in situ optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.
Detailed Specifications
- ICP Power: ??? W
- RF Power: ??? W
- Temperature Rnage: –40°C to +400°C
- Gases Available: ** CH4, H2, Ar, Cl2, BCl3, SF6, SiCl4, O2, N2
- He-back-side cooling
- 100mm wafer held down with ceramic clamp., single-load
- Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
- Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
- Windows-based Cortex software control of process and wafer handling
- Allowed Materials:
- InP-based epitaxies
- GaAs-baased epitaxies
- GaN-based epitaxies
- Silicon only for ALE (no deep etching)
- Standard masking materials include:
- SiO2
- Si3N4
- photoresist (at << 100°C).
Other materials can be exposed to the chamber only with staff approval.
- Laser monitoring with camera and etch simulation software: Intellemetrics LEP 500
Documentation
Recipes
- Oxford PlasmaPro Recipes - Recipes specific to this tool.
- All Dry Etching Recipes - use this list to see other options for dry etching various materials.