View source for Oxford ICP Etcher (PlasmaPro 100 Cobra)

{{tool|{{PAGENAME}}
|picture=OxfordPlasmaPro.jpg
|type = Dry Etch
|super= Tony Bosch
|location=Bay 2
|description = ICP Etches for III-V/ALE
|manufacturer = [https://www.oxinst.com Oxford Instruments]
|materials = InP, GaAs, GaN, Silicon ALE
|model = PlasmaPro 100 Cobra 300
|toolid=
}} 
==About==

The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) 
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. 

The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. 
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.

==Detailed Specifications==

*Temperature Range: –40°C to +400°C
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub>
*ICP Power (max): 3000 W
*RF Power (max): 600 W
*He-back-side cooling
*100mm wafer held down with ceramic clamp., single-load
**Users may place pieces onto carrier wafer with or without adhesive.  Standard recipes use no adhesive.
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
*Windows-based Cortex software control of process and wafer handling
*Allowed Materials:
**InP-based epitaxies - ''qualified and ready''
**GaAs-baased epitaxies - ''discuss with staff''
**GaN-based epitaxies - ''discuss with staff''
**GaSb-based epitaxies - ''discuss with staff''
**Atomic Layer Etching on select materials - ''discuss with staff''
*Standard masking materials include:
**SiO<sub>2</sub>
**Si<sub>3</sub>N<sub>4</sub>
**photoresist (at << 100°C).

Other materials can be exposed to the chamber only with staff approval.  

*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software

==Documentation==

*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]
*[["G:\Shared drives\NanoFab Equipment Group\Nanofab Equip Standard Operating Procedures\3.0  Dry Etch\3.18  Oxford PlasmaPro 100 Cobra 300\Training Video\Oxford Plasma Pro 100 Cobra 300 Training Video 2.mp4"|Training Video]]

==Recipes==

*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.