Old Deposition Data - NastaziaM 2021-11-22
Back to Vacuum Deposition Recipes
PECVD 1 (PlasmaTherm 790)
PECVD 1 Plots
SiO2 [PECVD 1]
Standard Recipe
SiO2 [PECVD 1] Standard Recipe
Present Data
Historical Data
SiO2 [PECVD 1] Historical Data
Si3N4 [PECVD 1]
Standard Recipe
Si3N4 [PECVD 1] Standard Recipe
Present Data
Historical Data
Si3N4 [PECVD 1] Historical Data
Low Stress Si3N4 [PECVD 2]
Standard Recipe
Low Stress Si3N4 [PECVD 1] Standard Recipe
Present Data
Low Stress Si3N4 [PECVD 1] Present Data
Historical Data
Low Stress Si3N4 [PECVD 1] Historical Data
Standard Cleaning Procedure [PECVD 1]
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Cleaning Recipe [CF4/O2 Clean]
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
PECVD 2 Plots
SiO2 [PECVD 2]
Standard Recipe
SiO2 [PECVD 2] Standard Recipe
Present Data
Historical Data
SiO2 [PECVD 2] Historical Data
Si3N4 [PECVD 2]
Standard Recipe
Si3N4 [PECVD 2] Standard Recipe
Present Data
Historical Data
Si3N4 [PECVD 2] Historical Data
Low Stress Si3N4 [PECVD 2]
Standard Recipe
Low Stress Si3N4 [PECVD 2] Standard Recipe
Present Data
Low Stress Si3N4 [PECVD 2] Present Data
Historical Data
Low Stress Si3N4 [PECVD 2] Historical Data
Amorphous Silicone [PECVD 2]
Standard Recipe
Amorphous Silicone [PECVD 2] Standard Recipe
Present Data
Amorphous Silicone [PECVD 2] Present Data
Historical Data
Amorphous Silicone [PECVD 2] Historical Data
Standard Cleaning Procedure [PECVD 2]
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe [STD CF4/O2 Clean recipe]
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
ICP-PECVD Plots
Low Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe
Present Data
Low Deposition Rate SiO2 [ICP-PECVD] Present Data
Historical Data
Low Deposition Rate SiO2 [ICP-PECVD] Historical Data
High Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe
Present Data
High Deposition Rate SiO2 [ICP-PECVD] Present Data
Historical Data
High Deposition Rate SiO2 [ICP-PECVD] Historical Data
Si3N4 [ICP-PECVD]
Standard Recipe
Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Si3N4 [ICP-PECVD] Present Data
Historical Data
Si3N4 [ICP-PECVD] Historical Data
Low Stress Si3N4 [ICP-PECVD]
Standard Recipe
Low Stress Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Low Stress Si3N4 [ICP-PECVD] Present Data
Historical Data
Low Stress Si3N4 [ICP-PECVD] Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
Ion Beam Deposition (Veeco NEXUS)
IBD Plots
SiO2 [IBD]
Standard Recipe
SiO2 [IBD] Standard Recipe
Present Data
Historical Data
Si3N4 [IBD]
Standard Recipe
Si3N4 [IBD] Standard Recipe
Present Data
Historical Data
Ta2O5 [IBD]
Standard Recipe
Ta2O5 [IBD] Standard Recipe
Present Data
Historical Data
Al2O3 [IBD]
Standard Recipe
Al2O3 [IBD] Standard Recipe
Present Data
Historical Data
TiO2 [IBD]
Standard Recipe
TiO2 [IBD] Standard Recipe
Present Data
Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min