Difference between revisions of "Old Deposition Data - NastaziaM 2021-11-22"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(added hyperlinks of present data)
Line 10: Line 10:
   
 
===Present Data===
  
===Present Data===
−
SiO<sub>2</sub> [PECVD 1] Present Data
 +
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 21: Line 21:
   
 
===Present Data===
  
===Present Data===
−
Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Present Data
 +
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 55: Line 55:
   
 
===Present Data===
  
===Present Data===
−
SiO<sub>2</sub> [PECVD 2] Present Data
 +
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 66: Line 66:
   
 
===Present Data===
  
===Present Data===
−
Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Present Data
 +
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 78: Line 78:
   
 
===Present Data===
  
===Present Data===
−
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Present Data
 +
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 121: Line 121:
   
 
===Present Data===
  
===Present Data===
−
Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Present Data
 +
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 130: Line 130:
   
 
===Standard Recipe===
  
===Standard Recipe===
−
High SiO<sub>2</sub> [ICP-PECVD] Standard Recipe
 +
High Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Standard Recipe
   
 
===Present Data===
  
===Present Data===
−
High SiO<sub>2</sub> [ICP-PECVD] Present Data
 +
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
−
High SiO<sub>2</sub> [ICP-PECVD] Historical Data
 +
High Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Historical Data
   
   
Line 145: Line 145:
   
 
===Present Data===
  
===Present Data===
−
Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Present Data
 +
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 157: Line 157:
   
 
===Present Data===
  
===Present Data===
−
Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Present Data
 +
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 178: Line 178:
   
 
===Present Data===
  
===Present Data===
−
SiO<sub>2</sub> [IBD] Present Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 190: Line 190:
   
 
===Present Data===
  
===Present Data===
−
Si<sub>3</sub>N<sub>4</sub> [IBD] Present Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
Line 201: Line 201:
   
 
===Present Data===
  
===Present Data===
−
Ta<sub>2</sub>O<sub>5</sub> [IBD] Present Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
 
Ta<sub>2</sub>O<sub>5</sub> [IBD] Historical Data
  
Ta<sub>2</sub>O<sub>5</sub> [IBD] Historical Data
 
<br />
  
<br />
−
==TiO<sub>2</sub> [IBD]==
 +
==Al<sub>2</sub>O<sub>3</sub> [IBD]==
   
 
===Standard Recipe===
  
===Standard Recipe===
−
TiO<sub>2</sub> [IBD] Standard Recipe
 +
Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe
   
 
===Present Data===
  
===Present Data===
  +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Present Data</nowiki>]
−
TiO<sub>2</sub> [IBD] Present Data
  
   
 
===Historical Data===
  
===Historical Data===
−
TiO<sub>2</sub> [IBD] Historical Data
 +
Al<sub>2</sub>O<sub>3</sub> [IBD] Historical Data
  +
 
<br />
  
<br />
−
==Al<sub>2</sub>O<sub>3</sub> [IBD]==
 +
==TiO<sub>2</sub> [IBD]==
   
 
===Standard Recipe===
  
===Standard Recipe===
−
Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe
 +
TiO<sub>2</sub> [IBD] Standard Recipe
   
 
===Present Data===
  
===Present Data===
−
Al<sub>2</sub>O<sub>3</sub> [IBD] Present Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
−
Al<sub>2</sub>O<sub>3</sub> [IBD] Historical Data
 +
TiO<sub>2</sub> [IBD] Historical Data
 
<br />
  
<br />
−  
 
==Standard Cleaning Procedure [ICP-PECVD]==
  
==Standard Cleaning Procedure [ICP-PECVD]==
 
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
  
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

Revision as of 11:55, 30 November 2021

Back to Vacuum Deposition Recipes

PECVD 1 (PlasmaTherm 790)

SiO2 [PECVD 1]

Standard Recipe

SiO2 [PECVD 1] Standard Recipe

Present Data

SiO2 [PECVD 1] Present Data

Historical Data

SiO2 [PECVD 1] Historical Data

Si3N4 [PECVD 1]

Standard Recipe

Si3N4 [PECVD 1] Standard Recipe

Present Data

Si3N4 [PECVD 1] Present Data

Historical Data

Si3N4 [PECVD 1] Historical Data

Low Stress Si3N4 [PECVD 2]

Standard Recipe

Low Stress Si3N4 [PECVD 1] Standard Recipe

Present Data

Low Stress Si3N4 [PECVD 1] Present Data

Historical Data

Low Stress Si3N4 [PECVD 1] Historical Data

Standard Cleaning Procedure [PECVD 1]

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Cleaning Recipe [CF4/O2 Clean]

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

SiO2 [PECVD 2]

Standard Recipe

SiO2 [PECVD 2] Standard Recipe

Present Data

SiO2 [PECVD 2] Present Data

Historical Data

SiO2 [PECVD 2] Historical Data

Si3N4 [PECVD 2]

Standard Recipe

Si3N4 [PECVD 2] Standard Recipe

Present Data

Si3N4 [PECVD 2] Present Data

Historical Data

Si3N4 [PECVD 2] Historical Data

Low Stress Si3N4 [PECVD 2]

Standard Recipe

Low Stress Si3N4 [PECVD 2] Standard Recipe

Present Data

Low Stress Si3N4 [PECVD 2] Present Data

Historical Data

Low Stress Si3N4 [PECVD 2] Historical Data

Standard Cleaning Procedure [PECVD 2]

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe [STD CF4/O2 Clean recipe]

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.


Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

Low Deposition Rate SiO2 [ICP-PECVD]

Standard Recipe

Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

Present Data

Low Deposition Rate SiO2 [ICP-PECVD] Present Data

Historical Data

Low Deposition Rate SiO2 [ICP-PECVD] Historical Data

High Deposition Rate SiO2 [ICP-PECVD]

Standard Recipe

High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

Present Data

High Deposition Rate SiO2 [ICP-PECVD] Present Data

Historical Data

High Deposition Rate SiO2 [ICP-PECVD] Historical Data


Si3N4 [ICP-PECVD]

Standard Recipe

Si3N4 [ICP-PECVD] Standard Recipe

Present Data

Si3N4 [ICP-PECVD] Present Data

Historical Data

Si3N4 [ICP-PECVD] Historical Data

Low Stress Si3N4 [ICP-PECVD]

Standard Recipe

Low Stress Si3N4 [ICP-PECVD] Standard Recipe

Present Data

Low Stress Si3N4 [ICP-PECVD] Present Data

Historical Data

Low Stress Si3N4 [ICP-PECVD] Historical Data

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe


Ion Beam Deposition (Veeco NEXUS)

SiO2 [IBD]

Standard Recipe

SiO2 [IBD] Standard Recipe

Present Data

SiO2 [IBD] Present Data

Historical Data

SiO2 [IBD] Historical Data

Si3N4 [IBD]

Standard Recipe

Si3N4 [IBD] Standard Recipe

Present Data

Si3N4 [IBD] Present Data

Historical Data

Si3N4 [IBD] Historical Data

Ta2O5 [IBD]

Standard Recipe

Ta2O5 [IBD] Standard Recipe

Present Data

Ta2O5 [IBD] Present Data

Historical Data

Ta2O5 [IBD] Historical Data

Al2O3 [IBD]

Standard Recipe

Al2O3 [IBD] Standard Recipe

Present Data

Al2O3 [IBD] Present Data

Historical Data

Al2O3 [IBD] Historical Data


TiO2 [IBD]

Standard Recipe

TiO2 [IBD] Standard Recipe

Present Data

TiO2 [IBD] Present Data

Historical Data

TiO2 [IBD] Historical Data

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Old_Deposition_Data_-_NastaziaM_2021-11-22&oldid=159466"