Difference between revisions of "Old Deposition Data - NastaziaM 2021-11-22"
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| − | <big>Back to [[Vacuum Deposition Recipes]] |
+ | <big>Back to [[Vacuum Deposition Recipes]]</big> |
| − | |||
| − | ==Contents== |
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| − | |||
| − | *[[PECVD Recipes#PECVD%201%20.28PlasmaTherm%20790.29|1 PECVD 1 (PlasmaTherm 790)]] |
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| − | **[[PECVD Recipes#Historical%20Particulate%20Data|1.1 Historical Particulate Data]] |
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| − | **[[PECVD Recipes#SiN%20deposition%20.28PECVD%20.231.29|1.2 SiN deposition (PECVD #1)]] |
||
| − | ***[[PECVD Recipes#Historical%20Data|1.2.1 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties|1.2.1.1 Thin-Film Properties]] |
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| − | ****[[PECVD Recipes#Uniformity%20Data|1.2.1.2 Uniformity Data]] |
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| − | **[[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.231.29|1.3 SiO<sub>2</sub> deposition (PECVD #1)]] |
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| − | ***[[PECVD Recipes#Historical%20Data%202|1.3.1 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%202|1.3.1.1 Thin-Film Properties]] |
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| − | ****[[PECVD Recipes#Thick-Film%20Properties|1.3.1.2 Thick-Film Properties]] |
||
| − | ***[[PECVD Recipes#Uniformity%20Data%202|1.3.2 Uniformity Data]] |
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| − | **[[PECVD Recipes#Low-Stress%20SiN%20-%20LS-SiN%20.28PECVD.231.29|1.4 Low-Stress SiN - LS-SiN (PECVD#1)]] |
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| − | **[[PECVD Recipes#SiOxNy%20deposition%20.28PECVD%20.231.29|1.5 SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)]] |
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| − | **[[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.231.29|1.6 Cleaning Recipes (PECVD #1)]] |
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| − | ***[[PECVD Recipes#Standard%20Cleaning%20Recipe:%20.22CF4.2FO2%20Clean.22|1.6.1 Standard Cleaning Recipe: "CF4/O2 Clean"]] |
||
| − | *[[PECVD Recipes#PECVD%202%20.28Advanced%20Vacuum.29|2 PECVD 2 (Advanced Vacuum)]] |
||
| − | **[[PECVD Recipes#Historical%20Particulate%20Data%202|2.1 Historical Particulate Data]] |
||
| − | **[[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.232.29|2.2 SiO<sub>2</sub> deposition (PECVD #2)]] |
||
| − | ***[[PECVD Recipes#Standard%20Recipe|2.2.1 Standard Recipe]] |
||
| − | ***[[PECVD Recipes#Historical%20Data%203|2.2.2 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%203|2.2.2.1 Thin-Film Properties]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%204|2.2.2.2 Thin-Film Properties]] |
||
| − | ****[[PECVD Recipes#Uniformity%20Data%203|2.2.2.3 Uniformity Data]] |
||
| − | **[[PECVD Recipes#SiN%20deposition%20.28PECVD%20.232.29|2.3 SiN deposition (PECVD #2)]] |
||
| − | ***[[PECVD Recipes#Standard%20Recipe%202|2.3.1 Standard Recipe]] |
||
| − | ***[[PECVD Recipes#Historical%20Data%204|2.3.2 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%205|2.3.2.1 Thin-Film Properties]] |
||
| − | ****[[PECVD Recipes#Uniformity%20Data%204|2.3.2.2 Uniformity Data]] |
||
| − | **[[PECVD Recipes#Low-Stress%20SiN%20deposition%20.28PECVD%20.232.29|2.4 Low-Stress SiN deposition (PECVD #2)]] |
||
| − | ***[[PECVD Recipes#Standard%20Recipe%203|2.4.1 Standard Recipe]] |
||
| − | ***[[PECVD Recipes#Historical%20Data%205|2.4.2 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%206|2.4.2.1 Thin-Film Properties]] |
||
| − | ****[[PECVD Recipes#Uniformity%20Data%205|2.4.2.2 Uniformity Data]] |
||
| − | **[[PECVD Recipes#Amorphous-Si%20deposition%20.28PECVD%20.232.29|2.5 Amorphous-Si deposition (PECVD #2)]] |
||
| − | **[[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.232.29|2.6 Cleaning Recipes (PECVD #2)]] |
||
| − | ***[[PECVD Recipes#Cleaning%20Procedure%20.28PECVD.232.29|2.6.1 Cleaning Procedure (PECVD#2)]] |
||
| − | ***[[PECVD Recipes#Standard%20Clean%20Recipe:%20.22STD%20CF4.2FO2%20Clean%20recipe.22|2.6.2 Standard Clean Recipe: "STD CF4/O2 Clean recipe"]] |
||
| − | ***[[PECVD Recipes#Clean%20Times%20.28PECVD.232.29|2.6.3 Clean Times (PECVD#2)]] |
||
| − | *[[PECVD Recipes#ICP-PECVD%20.28Unaxis%20VLR.29|3 ICP-PECVD (Unaxis VLR)]] |
||
| − | **[[PECVD Recipes#Historical%20Particulate%20Data%203|3.1 Historical Particulate Data]] |
||
| − | **[[PECVD Recipes#Standard%20Recipes|3.2 Standard Recipes]] |
||
| − | **[[PECVD Recipes#SiO2%20LDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.3 SiO2 LDR 250C Deposition (Unaxis VLR)]] |
||
| − | ***[[PECVD Recipes#Historical%20Data%206|3.3.1 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%207|3.3.1.1 Thin-Film Properties]] |
||
| − | ****[[PECVD Recipes#Uniformity%20Data%206|3.3.1.2 Uniformity Data]] |
||
| − | **[[PECVD Recipes#SiO2%20HDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.4 SiO2 HDR 250C Deposition (Unaxis VLR)]] |
||
| − | ***[[PECVD Recipes#Historical%20Data%207|3.4.1 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%208|3.4.1.1 Thin-Film Properties]] |
||
| − | ****[[PECVD Recipes#Uniformity%20Data%207|3.4.1.2 Uniformity Data]] |
||
| − | **[[PECVD Recipes#SiN%20250C%20deposition%20.28Unaxis%20VLR.29|3.5 SiN 250C deposition (Unaxis VLR)]] |
||
| − | ***[[PECVD Recipes#Historical%20Data%208|3.5.1 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%209|3.5.1.1 Thin-Film Properties]] |
||
| − | ****[[PECVD Recipes#Uniformity%20Data%208|3.5.1.2 Uniformity Data]] |
||
| − | **[[PECVD Recipes#SiN%20LS%20250C%20Deposition%20.28Unaxis%20VLR.29|3.6 SiN LS 250C Deposition (Unaxis VLR)]] |
||
| − | ***[[PECVD Recipes#Historical%20Data%209|3.6.1 Historical Data]] |
||
| − | ****[[PECVD Recipes#Thin-Film%20Properties%2010|3.6.1.1 Thin-Film Properties]] |
||
| − | ****[[PECVD Recipes#Uniformity%20Data%209|3.6.1.2 Uniformity Data]] |
||
| − | **[[PECVD Recipes#Cleaning%20Recipes%20.28Unaxis%20VLR%20Dep.29|3.7 Cleaning Recipes (Unaxis VLR Dep)]] |
||
=[[PECVD 1 (PlasmaTherm 790)]]= |
=[[PECVD 1 (PlasmaTherm 790)]]= |
||
| Line 67: | Line 6: | ||
==SiO<sub>2</sub> [PECVD 1]== |
==SiO<sub>2</sub> [PECVD 1]== |
||
| − | === |
+ | ===Standard Recipe=== |
SiO<sub>2</sub> [PECVD 1] Standard Recipe |
SiO<sub>2</sub> [PECVD 1] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
SiO<sub>2</sub> [PECVD 1] Present Data |
SiO<sub>2</sub> [PECVD 1] Present Data |
||
| − | === |
+ | ===Historical Data=== |
SiO<sub>2</sub> [PECVD 1] Historical Data |
SiO<sub>2</sub> [PECVD 1] Historical Data |
||
<br /> |
<br /> |
||
==Si<sub>3</sub>N<sub>4</sub> [PECVD 1]== |
==Si<sub>3</sub>N<sub>4</sub> [PECVD 1]== |
||
| − | === |
+ | ===Standard Recipe=== |
Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Present Data |
Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Historical Data |
Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Historical Data |
||
<br /> |
<br /> |
||
| − | == |
+ | ==Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2]== |
| − | === |
+ | ===Standard Recipe=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Present Data |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Historical Data |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Historical Data |
||
<br /> |
<br /> |
||
| Line 110: | Line 49: | ||
=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
||
| − | == |
+ | ==SiO<sub>2</sub> [PECVD 2]== |
| − | === |
+ | ===Standard Recipe=== |
SiO<sub>2</sub> [PECVD 2] Standard Recipe |
SiO<sub>2</sub> [PECVD 2] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
SiO<sub>2</sub> [PECVD 2] Present Data |
SiO<sub>2</sub> [PECVD 2] Present Data |
||
| − | === |
+ | ===Historical Data=== |
SiO<sub>2</sub> [PECVD 2] Historical Data |
SiO<sub>2</sub> [PECVD 2] Historical Data |
||
<br /> |
<br /> |
||
==Si<sub>3</sub>N<sub>4</sub> [PECVD 2]== |
==Si<sub>3</sub>N<sub>4</sub> [PECVD 2]== |
||
| − | === |
+ | ===Standard Recipe=== |
Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Present Data |
Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Historical Data |
Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Historical Data |
||
<br /> |
<br /> |
||
| − | == |
+ | ==Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2]== |
| − | === |
+ | ===Standard Recipe=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Present Data |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Historical Data |
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Historical Data |
||
<br /> |
<br /> |
||
| Line 176: | Line 115: | ||
The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
||
| − | == |
+ | ==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
| − | === |
+ | ===Standard Recipe=== |
Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Present Data |
Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Historical Data |
Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Historical Data |
||
<br /> |
<br /> |
||
| − | == |
+ | ==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
| − | === |
+ | ===Standard Recipe=== |
High SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
High SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
High SiO<sub>2</sub> [ICP-PECVD] Present Data |
High SiO<sub>2</sub> [ICP-PECVD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
High SiO<sub>2</sub> [ICP-PECVD] Historical Data |
High SiO<sub>2</sub> [ICP-PECVD] Historical Data |
||
| − | ==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] |
+ | ==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
| − | === |
+ | ===Standard Recipe=== |
Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Present Data |
Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Historical Data |
Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Historical Data |
||
<br /> |
<br /> |
||
| − | == |
+ | ==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
| − | === |
+ | ===Standard Recipe=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Present Data |
Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Historical Data |
Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Historical Data |
||
<br /> |
<br /> |
||
| Line 229: | Line 168: | ||
*SiO<sub>2</sub> etches at 40nm/min |
*SiO<sub>2</sub> etches at 40nm/min |
||
| − | === |
+ | ===Standard Clean Recipe=== |
<br /> |
<br /> |
||
=[[Ion Beam Deposition (Veeco NEXUS)]]= |
=[[Ion Beam Deposition (Veeco NEXUS)]]= |
||
| − | == |
+ | ==SiO<sub>2</sub> [IBD]== |
| − | === |
+ | ===Standard Recipe=== |
SiO<sub>2</sub> [IBD] Standard Recipe |
SiO<sub>2</sub> [IBD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
SiO<sub>2</sub> [IBD] Present Data |
SiO<sub>2</sub> [IBD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
SiO<sub>2</sub> [IBD] Historical Data |
SiO<sub>2</sub> [IBD] Historical Data |
||
<br /> |
<br /> |
||
| − | == |
+ | ==Si<sub>3</sub>N<sub>4</sub> [IBD]== |
| − | === |
+ | ===Standard Recipe=== |
Si<sub>3</sub>N<sub>4</sub> [IBD] Standard Recipe |
Si<sub>3</sub>N<sub>4</sub> [IBD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Si<sub>3</sub>N<sub>4</sub> [IBD] Present Data |
Si<sub>3</sub>N<sub>4</sub> [IBD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Si<sub>3</sub>N<sub>4</sub> [IBD] Historical Data |
Si<sub>3</sub>N<sub>4</sub> [IBD] Historical Data |
||
<br /> |
<br /> |
||
==Ta<sub>2</sub>O<sub>5</sub> [IBD]== |
==Ta<sub>2</sub>O<sub>5</sub> [IBD]== |
||
| − | === |
+ | ===Standard Recipe=== |
Ta<sub>2</sub>O<sub>5</sub> [IBD] Standard Recipe |
Ta<sub>2</sub>O<sub>5</sub> [IBD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Ta<sub>2</sub>O<sub>5</sub> [IBD] Present Data |
Ta<sub>2</sub>O<sub>5</sub> [IBD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Ta<sub>2</sub>O<sub>5</sub> [IBD] Historical Data |
Ta<sub>2</sub>O<sub>5</sub> [IBD] Historical Data |
||
<br /> |
<br /> |
||
==TiO<sub>2</sub> [IBD]== |
==TiO<sub>2</sub> [IBD]== |
||
| − | === |
+ | ===Standard Recipe=== |
TiO<sub>2</sub> [IBD] Standard Recipe |
TiO<sub>2</sub> [IBD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
TiO<sub>2</sub> [IBD] Present Data |
TiO<sub>2</sub> [IBD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
TiO<sub>2</sub> [IBD] Historical Data |
TiO<sub>2</sub> [IBD] Historical Data |
||
<br /> |
<br /> |
||
| − | ==Al<sub>2</sub>O<sub>3</sub> [IBD] |
+ | ==Al<sub>2</sub>O<sub>3</sub> [IBD]== |
| − | === |
+ | ===Standard Recipe=== |
Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe |
Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe |
||
| − | === |
+ | ===Present Data=== |
Al<sub>2</sub>O<sub>3</sub> [IBD] Present Data |
Al<sub>2</sub>O<sub>3</sub> [IBD] Present Data |
||
| − | === |
+ | ===Historical Data=== |
Al<sub>2</sub>O<sub>3</sub> [IBD] Historical Data |
Al<sub>2</sub>O<sub>3</sub> [IBD] Historical Data |
||
<br /> |
<br /> |
||
| − | == |
+ | ==Standard Cleaning Procedure [ICP-PECVD]== |
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| Line 296: | Line 235: | ||
*SiO<sub>2</sub> etches at 40nm/min |
*SiO<sub>2</sub> etches at 40nm/min |
||
| − | === |
+ | ===Standard Clean Recipe=== |
Revision as of 10:58, 30 November 2021
Back to Vacuum Deposition Recipes
PECVD 1 (PlasmaTherm 790)
SiO2 [PECVD 1]
Standard Recipe
SiO2 [PECVD 1] Standard Recipe
Present Data
SiO2 [PECVD 1] Present Data
Historical Data
SiO2 [PECVD 1] Historical Data
Si3N4 [PECVD 1]
Standard Recipe
Si3N4 [PECVD 1] Standard Recipe
Present Data
Si3N4 [PECVD 1] Present Data
Historical Data
Si3N4 [PECVD 1] Historical Data
Low Stress Si3N4 [PECVD 2]
Standard Recipe
Low Stress Si3N4 [PECVD 1] Standard Recipe
Present Data
Low Stress Si3N4 [PECVD 1] Present Data
Historical Data
Low Stress Si3N4 [PECVD 1] Historical Data
Standard Cleaning Procedure [PECVD 1]
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Cleaning Recipe [CF4/O2 Clean]
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
SiO2 [PECVD 2]
Standard Recipe
SiO2 [PECVD 2] Standard Recipe
Present Data
SiO2 [PECVD 2] Present Data
Historical Data
SiO2 [PECVD 2] Historical Data
Si3N4 [PECVD 2]
Standard Recipe
Si3N4 [PECVD 2] Standard Recipe
Present Data
Si3N4 [PECVD 2] Present Data
Historical Data
Si3N4 [PECVD 2] Historical Data
Low Stress Si3N4 [PECVD 2]
Standard Recipe
Low Stress Si3N4 [PECVD 2] Standard Recipe
Present Data
Low Stress Si3N4 [PECVD 2] Present Data
Historical Data
Low Stress Si3N4 [PECVD 2] Historical Data
Standard Cleaning Procedure [PECVD 2]
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe [STD CF4/O2 Clean recipe]
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
Low Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe
Present Data
Low Deposition Rate SiO2 [ICP-PECVD] Present Data
Historical Data
Low Deposition Rate SiO2 [ICP-PECVD] Historical Data
High Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
High SiO2 [ICP-PECVD] Standard Recipe
Present Data
High SiO2 [ICP-PECVD] Present Data
Historical Data
High SiO2 [ICP-PECVD] Historical Data
Si3N4 [ICP-PECVD]
Standard Recipe
Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Si3N4 [ICP-PECVD] Present Data
Historical Data
Si3N4 [ICP-PECVD] Historical Data
Low Stress Si3N4 [ICP-PECVD]
Standard Recipe
Low Stress Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Low Stress Si3N4 [ICP-PECVD] Present Data
Historical Data
Low Stress Si3N4 [ICP-PECVD] Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
Ion Beam Deposition (Veeco NEXUS)
SiO2 [IBD]
Standard Recipe
SiO2 [IBD] Standard Recipe
Present Data
SiO2 [IBD] Present Data
Historical Data
SiO2 [IBD] Historical Data
Si3N4 [IBD]
Standard Recipe
Si3N4 [IBD] Standard Recipe
Present Data
Si3N4 [IBD] Present Data
Historical Data
Si3N4 [IBD] Historical Data
Ta2O5 [IBD]
Standard Recipe
Ta2O5 [IBD] Standard Recipe
Present Data
Ta2O5 [IBD] Present Data
Historical Data
Ta2O5 [IBD] Historical Data
TiO2 [IBD]
Standard Recipe
TiO2 [IBD] Standard Recipe
Present Data
TiO2 [IBD] Present Data
Historical Data
TiO2 [IBD] Historical Data
Al2O3 [IBD]
Standard Recipe
Al2O3 [IBD] Standard Recipe
Present Data
Al2O3 [IBD] Present Data
Historical Data
Al2O3 [IBD] Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min