Difference between revisions of "Old Deposition Data - NastaziaM 2021-11-22"
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<big>Back to [[Vacuum Deposition Recipes]].</big> |
<big>Back to [[Vacuum Deposition Recipes]].</big> |
||
| − | == |
+ | ==Contents== |
| − | * |
+ | *[[PECVD Recipes#PECVD%201%20.28PlasmaTherm%20790.29|1 PECVD 1 (PlasmaTherm 790)]] |
| − | ** |
+ | **[[PECVD Recipes#Historical%20Particulate%20Data|1.1 Historical Particulate Data]] |
| − | ** |
+ | **[[PECVD Recipes#SiN%20deposition%20.28PECVD%20.231.29|1.2 SiN deposition (PECVD #1)]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data|1.2.1 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties|1.2.1.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Uniformity%20Data|1.2.1.2 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.231.29|1.3 SiO<sub>2</sub> deposition (PECVD #1)]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data%202|1.3.1 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%202|1.3.1.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Thick-Film%20Properties|1.3.1.2 Thick-Film Properties]] |
| − | *** |
+ | ***[[PECVD Recipes#Uniformity%20Data%202|1.3.2 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#Low-Stress%20SiN%20-%20LS-SiN%20.28PECVD.231.29|1.4 Low-Stress SiN - LS-SiN (PECVD#1)]] |
| − | ** |
+ | **[[PECVD Recipes#SiOxNy%20deposition%20.28PECVD%20.231.29|1.5 SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)]] |
| − | ** |
+ | **[[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.231.29|1.6 Cleaning Recipes (PECVD #1)]] |
| − | *** |
+ | ***[[PECVD Recipes#Standard%20Cleaning%20Recipe:%20.22CF4.2FO2%20Clean.22|1.6.1 Standard Cleaning Recipe: "CF4/O2 Clean"]] |
| − | * |
+ | *[[PECVD Recipes#PECVD%202%20.28Advanced%20Vacuum.29|2 PECVD 2 (Advanced Vacuum)]] |
| − | ** |
+ | **[[PECVD Recipes#Historical%20Particulate%20Data%202|2.1 Historical Particulate Data]] |
| − | ** |
+ | **[[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.232.29|2.2 SiO<sub>2</sub> deposition (PECVD #2)]] |
| − | *** |
+ | ***[[PECVD Recipes#Standard%20Recipe|2.2.1 Standard Recipe]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data%203|2.2.2 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%203|2.2.2.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%204|2.2.2.2 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Uniformity%20Data%203|2.2.2.3 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#SiN%20deposition%20.28PECVD%20.232.29|2.3 SiN deposition (PECVD #2)]] |
| − | *** |
+ | ***[[PECVD Recipes#Standard%20Recipe%202|2.3.1 Standard Recipe]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data%204|2.3.2 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%205|2.3.2.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Uniformity%20Data%204|2.3.2.2 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#Low-Stress%20SiN%20deposition%20.28PECVD%20.232.29|2.4 Low-Stress SiN deposition (PECVD #2)]] |
| − | *** |
+ | ***[[PECVD Recipes#Standard%20Recipe%203|2.4.1 Standard Recipe]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data%205|2.4.2 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%206|2.4.2.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Uniformity%20Data%205|2.4.2.2 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#Amorphous-Si%20deposition%20.28PECVD%20.232.29|2.5 Amorphous-Si deposition (PECVD #2)]] |
| − | ** |
+ | **[[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.232.29|2.6 Cleaning Recipes (PECVD #2)]] |
| − | *** |
+ | ***[[PECVD Recipes#Cleaning%20Procedure%20.28PECVD.232.29|2.6.1 Cleaning Procedure (PECVD#2)]] |
| − | *** |
+ | ***[[PECVD Recipes#Standard%20Clean%20Recipe:%20.22STD%20CF4.2FO2%20Clean%20recipe.22|2.6.2 Standard Clean Recipe: "STD CF4/O2 Clean recipe"]] |
| − | *** |
+ | ***[[PECVD Recipes#Clean%20Times%20.28PECVD.232.29|2.6.3 Clean Times (PECVD#2)]] |
| − | * |
+ | *[[PECVD Recipes#ICP-PECVD%20.28Unaxis%20VLR.29|3 ICP-PECVD (Unaxis VLR)]] |
| − | ** |
+ | **[[PECVD Recipes#Historical%20Particulate%20Data%203|3.1 Historical Particulate Data]] |
| − | ** |
+ | **[[PECVD Recipes#Standard%20Recipes|3.2 Standard Recipes]] |
| − | ** |
+ | **[[PECVD Recipes#SiO2%20LDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.3 SiO2 LDR 250C Deposition (Unaxis VLR)]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data%206|3.3.1 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%207|3.3.1.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Uniformity%20Data%206|3.3.1.2 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#SiO2%20HDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.4 SiO2 HDR 250C Deposition (Unaxis VLR)]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data%207|3.4.1 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%208|3.4.1.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Uniformity%20Data%207|3.4.1.2 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#SiN%20250C%20deposition%20.28Unaxis%20VLR.29|3.5 SiN 250C deposition (Unaxis VLR)]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data%208|3.5.1 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%209|3.5.1.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Uniformity%20Data%208|3.5.1.2 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#SiN%20LS%20250C%20Deposition%20.28Unaxis%20VLR.29|3.6 SiN LS 250C Deposition (Unaxis VLR)]] |
| − | *** |
+ | ***[[PECVD Recipes#Historical%20Data%209|3.6.1 Historical Data]] |
| − | **** |
+ | ****[[PECVD Recipes#Thin-Film%20Properties%2010|3.6.1.1 Thin-Film Properties]] |
| − | **** |
+ | ****[[PECVD Recipes#Uniformity%20Data%209|3.6.1.2 Uniformity Data]] |
| − | ** |
+ | **[[PECVD Recipes#Cleaning%20Recipes%20.28Unaxis%20VLR%20Dep.29|3.7 Cleaning Recipes (Unaxis VLR Dep)]] |
| − | = |
+ | =[[PECVD 1 (PlasmaTherm 790)]]= |
| + | ==SiO<sub>2</sub> [PECVD 1]== |
||
| − | ==== Historical Particulate Data ==== |
||
| + | === Standard Recipe === |
||
| − | * Particulates(Gain4) in PECVD#1-OLD DATA 2015 |
||
| + | SiO<sub>2</sub> [PECVD 1] Standard Recipe |
||
| − | * Particulates(Gain4) in PECVD#1-OLD DATA 2016 |
||
| − | * Particulates(Gain4) in PECVD#1-OLD DATA 2017 |
||
| − | * Particulates in PECVD#1 films 2017 |
||
| − | * Particulates in PECVD#1 films 2018 |
||
| − | * Particulates in PECVD#1 films 2019 |
||
| − | * Particulates in PECVD#1 films 2020 |
||
| − | * Particulates in PECVD#1 films 2021 |
||
| + | === Present Data === |
||
| − | == SiN deposition (PECVD #1) == |
||
| + | SiO<sub>2</sub> [PECVD 1] Present Data |
||
| + | === Historical Data === |
||
| − | * Si3N4 Standard Recipe |
||
| + | SiO<sub>2</sub> [PECVD 1] Historical Data |
||
| + | <br /> |
||
| + | ==Si<sub>3</sub>N<sub>4</sub> [PECVD 1]== |
||
| − | + | === Standard Recipe === |
|
| + | Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
||
| − | + | === Present Data === |
|
| + | Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Present Data |
||
| − | + | === Historical Data === |
|
| + | Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Historical Data |
||
| − | * SiN 100nm Data 2015 |
||
| + | <br /> |
||
| − | * SiN 100nm Data 2016 |
||
| − | * SiN 100nm Data 2017 |
||
| − | * SiN 300nm Data 2017 |
||
| − | * SiN 300nm Data 2018 |
||
| − | * SiN 300nm Data 2019 |
||
| − | * SiN 300nm Data 2020 |
||
| − | * SiN 300nm Data 2021 |
||
| + | == Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] == |
||
| − | ===== Uniformity Data ===== |
||
| + | === Standard Recipe === |
||
| − | * SiN 100 nm Thickness uniformity 2014 |
||
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
||
| − | * SiN 100 nm Thickness uniformity 2015 |
||
| − | * SiN 100 nm Thickness uniformity 2016 |
||
| − | * SiN 100 nm Thickness uniformity 2017 |
||
| − | * SiN 300nm Thickness uniformity 2017 |
||
| − | * SiN 300nm Thickness uniformity 2018 |
||
| − | * SiN 300nm Thickness uniformity 2019 |
||
| − | * SiN 300nm Thickness uniformity 2020 |
||
| − | * SiN 300nm Thickness uniformity 2021 |
||
| + | === Present Data === |
||
| − | == SiO<sub>2</sub> deposition (PECVD #1) == |
||
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Present Data |
||
| + | === Historical Data === |
||
| − | * SiO2 Standard Recipe |
||
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Historical Data |
||
| − | |||
| + | <br /> |
||
| − | ==== Historical Data ==== |
||
| + | ==Standard Cleaning Procedure [PECVD 1]== |
||
| − | |||
| − | ===== Thin-Film Properties ===== |
||
| − | |||
| − | * SiO<sub>2</sub> 100nm Data 2014 |
||
| − | * SiO<sub>2</sub> 100nm Data 2015 |
||
| − | * SiO<sub>2</sub> 100nm Data 2016 |
||
| − | * SiO<sub>2</sub> 100nm Data 2017 |
||
| − | * SiO<sub>2</sub> 300nm Data 2017 |
||
| − | * SiO<sub>2</sub> 300nm Data 2018 |
||
| − | * SiO<sub>2</sub> 300nm Data 2019 |
||
| − | * SiO<sub>2</sub> 300nm Data 2020 |
||
| − | * SiO<sub>2</sub> 300nm Data 2021 |
||
| − | |||
| − | ===== Thick-Film Properties ===== |
||
| − | |||
| − | * SiO<sub>2</sub> Thick film Data 2021 |
||
| − | |||
| − | ==== Uniformity Data ==== |
||
| − | |||
| − | * SiO<sub>2</sub> 100nm Thickness uniformity 2014 |
||
| − | * SiO<sub>2</sub> 100 nm Thickness uniformity 2015 |
||
| − | * SiO<sub>2</sub> 100 nmThickness uniformity 2016 |
||
| − | * SiO<sub>2</sub> 100nm Thickness uniformity 2017 |
||
| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2017 |
||
| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2018 |
||
| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2019 |
||
| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2020 |
||
| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2021 |
||
| − | |||
| − | == Low-Stress SiN - LS-SiN (PECVD#1) == |
||
| − | |||
| − | * [[Images/4/4a/New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]] |
||
| − | * LS SiN Data 2014 |
||
| − | * LS SiN 1000A Thickness uniformity 2014 |
||
| − | |||
| − | == SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) == |
||
| − | |||
| − | * [[Images/2/24/New PECVD1-LS SION-recipe 2014 LS SION recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]] |
||
| − | * SiO<sub>x</sub>N<sub>y</sub> Data 2014 |
||
| − | * SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014 |
||
| − | |||
| − | == Cleaning Recipes (PECVD #1) == |
||
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| − | # |
+ | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
| − | # |
+ | #Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
| − | === |
+ | ===Standard Cleaning Recipe [CF4/O2 Clean]=== |
| − | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will |
+ | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it. |
| − | = |
+ | =[[PECVD 2 (Advanced Vacuum)]]= |
| + | == SiO<sub>2</sub> [PECVD 2] == |
||
| − | ==== Historical Particulate Data ==== |
||
| + | === Standard Recipe === |
||
| − | * Particulates (Gain4) in PECVD#2 2015 |
||
| + | SiO<sub>2</sub> [PECVD 2] Standard Recipe |
||
| − | * Particulates (Gain4) in PECVD#2 2016 |
||
| − | * Particulates (Gain4) in PECVD#2 2017 |
||
| + | === Present Data === |
||
| − | * Particulates in PECVD#2 films 2017 |
||
| − | + | SiO<sub>2</sub> [PECVD 2] Present Data |
|
| − | * Particulates in PECVD#2 films 2019 |
||
| − | * Particulates in PECVD#2 films 2020 |
||
| − | * Particulates in PECVD#2 films 2021 |
||
| + | === Historical Data === |
||
| − | == SiO<sub>2</sub> deposition (PECVD #2) == |
||
| + | SiO<sub>2</sub> [PECVD 2] Historical Data |
||
| + | <br /> |
||
| + | ==Si<sub>3</sub>N<sub>4</sub> [PECVD 2]== |
||
| − | + | === Standard Recipe === |
|
| + | Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
||
| + | === Present Data === |
||
| − | * STD SiO2 Recipe |
||
| + | Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Present Data |
||
| − | + | === Historical Data === |
|
| + | Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Historical Data |
||
| + | <br /> |
||
| + | == Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] == |
||
| − | ===== Thin-Film Properties ===== |
||
| + | === Standard Recipe === |
||
| − | * Oxide Data 2014 |
||
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
||
| − | * Oxide Data 2015 |
||
| − | * Oxide data 2016 |
||
| − | * Oxide Data 2017 |
||
| − | * Oxide Data 2018 |
||
| − | * Oxide Data 2019 |
||
| − | * Oxide Data 2020 |
||
| − | * Oxide Data 2021 |
||
| − | + | === Present Data === |
|
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Present Data |
||
| − | + | === Historical Data === |
|
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Historical Data |
||
| + | <br /> |
||
| + | ==Standard Cleaning Procedure [PECVD 2]== |
||
| + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| + | #(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
||
| − | ===== Uniformity Data ===== |
||
| + | #Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
||
| + | ===Standard Clean Recipe [STD CF<sub>4</sub>/O<sub>2</sub> Clean recipe]=== |
||
| − | * Oxide Thickness Uniformity 2014 |
||
| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it. |
||
| − | * Oxide Thickness Uniformity 2015 |
||
| − | * Oxide Thickness Uniformity 2016 |
||
| − | * Oxide Thickness Uniformity 2017 |
||
| − | * Oxide Thickness Uniformity 2018 |
||
| − | * Oxide Thickness Uniformity 2019 |
||
| − | * Oxide Thickness Uniformity 2020 |
||
| − | * Oxide Thickness Uniformity 2021 |
||
| − | == SiN deposition (PECVD #2) == |
||
| + | '''Clean Times (PECVD#2''') |
||
| − | ==== Standard Recipe ==== |
||
| − | |||
| − | * [[Images/4/4c/SiNx Films by PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]] |
||
| − | * STD Nitride2 Recipe |
||
| − | |||
| − | ==== Historical Data ==== |
||
| − | |||
| − | ===== Thin-Film Properties ===== |
||
| − | |||
| − | * Nitride2 Data 2014 |
||
| − | * Nitride2 Data 2015 |
||
| − | * Nitride2 Data 2016 |
||
| − | * Nitride2 Data 2017 |
||
| − | * Nitride2 Data 2018 |
||
| − | * Nitride2 Data 2019 |
||
| − | * Nitride2 Data 2020 |
||
| − | * Nitride2 Data 2021 |
||
| − | |||
| − | ===== Uniformity Data ===== |
||
| − | |||
| − | * Nitride2 Thickness Uniformity 2014 |
||
| − | * Nitride2 Thickness Uniformity 2015 |
||
| − | * Nitride2 Thickness Uniformity 2016 |
||
| − | * Nitride2 Thickness Uniformity 2017 |
||
| − | * Nitride2 Thickness Uniformity 2018 |
||
| − | * Nitride2 Thickness Uniformity 2019 |
||
| − | * Nitride2 Thickness Uniformity 2020 |
||
| − | * Nitride2 Thickness Uniformity 2021 |
||
| − | |||
| − | == Low-Stress SiN deposition (PECVD #2) == |
||
| − | ''Low-Stress SilIcon Nitride (< 100 MPa)'' |
||
| − | |||
| − | ==== Standard Recipe ==== |
||
| − | |||
| − | * STD LS Nitride2 Recipe |
||
| − | * ''Old Versions:'' |
||
| − | ** [[Images/a/a5/New AdvPECVD-LS Nitride2 300C standard recipe LS Nitride2 standard recipe.pdf|LS Nitride2 Standard Recipe 2014-5/9/2018]] |
||
| − | ** [[Images/0/01/STD LSNitride2 5-9-18.pdf|STD LSNitride2 5/9/2018]] |
||
| − | |||
| − | ==== Historical Data ==== |
||
| − | |||
| − | ===== Thin-Film Properties ===== |
||
| − | |||
| − | * LS Nitride2 Data 2014 |
||
| − | * LS Nitride2 Data 2015 |
||
| − | * LS Nitride2 Data 2016 |
||
| − | * LS Nitride2 Data 2017 |
||
| − | * LS Nitride2 Data 2018 |
||
| − | * LS Nitride2 Data 2019 |
||
| − | * LS Nitride2 Data 2020 |
||
| − | * LS Nitride2 Data 2021 |
||
| − | |||
| − | ===== Uniformity Data ===== |
||
| − | |||
| − | * LS Nitride2 Thickness Uniformity 2014 |
||
| − | * LS Nitride2 Thickness Uniformity 2015 |
||
| − | * LS Nitride2 Thickness Uniformity 2016 |
||
| − | * LS Nitride2 Thickness Uniformity 2017 |
||
| − | * LS Nitride2 Thickness Uniformity 2018 |
||
| − | * LS Nitride2 Thickness Uniformity 2019 |
||
| − | * LS Nitride2 Thickness Uniformity 2020 |
||
| − | * LS Nitride2 Thickness Uniformity 2021 |
||
| − | |||
| − | == Amorphous-Si deposition (PECVD #2) == |
||
| − | |||
| − | * [[Images/9/9d/03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]] |
||
| − | * [[Images/0/09/ASi deposition and film stress using AV dep tool.pdf|Amorphous Si Films and Their Stress]] |
||
| − | |||
| − | == Cleaning Recipes (PECVD #2) == |
||
| − | |||
| − | === Cleaning Procedure (PECVD#2) === |
||
| − | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| − | |||
| − | # (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
||
| − | # Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
||
| − | |||
| − | === Standard Clean Recipe: "STD CF4/O2 Clean recipe" === |
||
| − | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
| − | |||
| − | === Clean Times (PECVD#2) === |
||
{| class="wikitable" |
{| class="wikitable" |
||
!Film Deposited |
!Film Deposited |
||
| Line 308: | Line 171: | ||
|} |
|} |
||
| − | = |
+ | =[[ICP-PECVD (Unaxis VLR)]]= |
| − | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation| |
+ | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber. |
| − | The system currently has |
+ | The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
| + | == Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] == |
||
| − | ==== Historical Particulate Data ==== |
||
| + | === Standard Recipe === |
||
| − | * Particulates in Unaxis films @250C-2019 |
||
| + | Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
||
| − | * Particulates in Unaxis films @250C-2020 |
||
| − | + | === Present Data === |
|
| + | Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Present Data |
||
| + | === Historical Data === |
||
| − | * SiO2 LDR 250C Recipe-2020 |
||
| + | Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Historical Data |
||
| − | * SiO2 HDR 250C Recipe-2020 |
||
| + | <br /> |
||
| − | * SiN 250C Recipe-2020 |
||
| − | * SiN LS 250C Recipe-2020 |
||
| + | == High Deposition Rate SiO<sub>2</sub> [ICP-PECVD] == |
||
| − | == SiO2 LDR 250C Deposition (Unaxis VLR) == |
||
| − | ''Low-Deposition Rate SiO<sub>2</sub>'' |
||
| − | + | === Standard Recipe === |
|
| + | High SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
||
| − | + | === Present Data === |
|
| + | High SiO<sub>2</sub> [ICP-PECVD] Present Data |
||
| − | This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| + | === Historical Data === |
||
| − | * SiO2 LDR 250C 300nm Data-2019 |
||
| + | High SiO<sub>2</sub> [ICP-PECVD] Historical Data |
||
| − | * SiO2 LDR 250C 300nm Data-2020 |
||
| − | ===== Uniformity Data ===== |
||
| + | ==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] == |
||
| − | * Thickness Uniformity SiO2 LDR 250C 300nm-2019 |
||
| − | * Thickness Uniformity SiO2 LDR 250C 300nm-2020 |
||
| + | === Standard Recipe === |
||
| − | == SiO2 HDR 250C Deposition (Unaxis VLR) == |
||
| + | Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
||
| − | ''High-Deposition Rate SiO<sub>2</sub>'' |
||
| − | + | === Present Data === |
|
| + | Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Present Data |
||
| − | + | === Historical Data === |
|
| + | Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Historical Data |
||
| − | This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| + | <br /> |
||
| + | == Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] == |
||
| − | * SiO2 HDR 250C 300nm Data-2019 |
||
| − | * SiO2 HDR 250C 300nm Data-2020 |
||
| − | + | === Standard Recipe === |
|
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
||
| + | === Present Data === |
||
| − | * Thickness Uniformity SiO2 HDR 250C 300nm-2019 |
||
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Present Data |
||
| − | * Thickness Uniformity SiO2 HDR 250C 300nm-2020 |
||
| + | === Historical Data === |
||
| − | == SiN 250C deposition (Unaxis VLR) == |
||
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Historical Data |
||
| − | |||
| + | <br /> |
||
| − | ==== Historical Data ==== |
||
| + | ==Standard Cleaning Procedure [ICP-PECVD]== |
||
| − | |||
| − | ===== Thin-Film Properties ===== |
||
| − | This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| − | |||
| − | * SiN 250C 300nm Data-2020 |
||
| − | |||
| − | ===== Uniformity Data ===== |
||
| − | |||
| − | * Thickness Uniformity SiN 250C 300nm-2020 |
||
| − | |||
| − | == SiN LS 250C Deposition (Unaxis VLR) == |
||
| − | ''Low Stress Silicon-Nitride'' |
||
| − | |||
| − | ==== Historical Data ==== |
||
| − | ''To Be Added'' |
||
| − | |||
| − | ===== Thin-Film Properties ===== |
||
| − | This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| − | |||
| − | * SiN LS 250C 300nm Data-2020 |
||
| − | |||
| − | ===== Uniformity Data ===== |
||
| − | |||
| − | * Thickness Uniformity SiN LS 250C 300nm-2020 |
||
| − | |||
| − | == Cleaning Recipes (Unaxis VLR Dep) == |
||
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| − | * |
+ | *SiNx etches at 20nm/min |
| − | * |
+ | *SiO<sub>2</sub> etches at 40nm/min |
| + | === Standard Clean Recipe === |
||
<br /> |
<br /> |
||
| + | =[[Ion Beam Deposition (Veeco NEXUS)]]= |
||
| + | == SiO<sub>2</sub> [IBD] == |
||
| − | == [[Ion Beam Deposition (Veeco NEXUS)]] == |
||
| + | === Standard Recipe === |
||
| − | * IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc. |
||
| + | SiO<sub>2</sub> [IBD] Standard Recipe |
||
| − | ** '''All users are required to enter their calibration deps (simple test deps only)''' |
||
| − | * Particulates in SiO2 and Ta2O5 in 2015 |
||
| − | === |
+ | === Present Data === |
| + | SiO<sub>2</sub> [IBD] Present Data |
||
| − | + | === Historical Data === |
|
| + | SiO<sub>2</sub> [IBD] Historical Data |
||
| + | <br /> |
||
| + | == Si<sub>3</sub>N<sub>4</sub> [IBD] == |
||
| − | * [[Images/8/8d/New IBD SiO2 Standard Recipe.pdf|SiO<sub>2</sub> Standard Recipe]] |
||
| − | * SiO<sub>2</sub> Data December 2014 |
||
| − | * SiO<sub>2</sub> Thickness uniformity 2014 |
||
| − | * SiO<sub>2</sub> Data-15min depositions 2015 |
||
| − | * SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015 |
||
| − | * SiO<sub>2</sub> Data-1hr depositions 2015 |
||
| − | * SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015 |
||
| − | * SiO<sub>2</sub> Data-1hr depositions 2016 |
||
| − | * SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016 |
||
| + | === Standard Recipe === |
||
| − | ==== SiO<sub>2</sub> 1hr deposition properties: ==== |
||
| + | Si<sub>3</sub>N<sub>4</sub> [IBD] Standard Recipe |
||
| + | === Present Data === |
||
| − | * Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
||
| + | Si<sub>3</sub>N<sub>4</sub> [IBD] Present Data |
||
| − | * HF e.r.~350 nm/min |
||
| − | * Stress ≈ -390MPa (compressive) |
||
| − | * Refractive Index: ≈ 1.494 |
||
| − | * [Cauchy Parameters] (350-2000nm): |
||
| − | ** A = 1.480 |
||
| − | ** B = 0.00498 |
||
| − | ** C = -3.2606e-5 |
||
| + | === Historical Data === |
||
| − | === Si<sub>3</sub>N<sub>4</sub> deposition (IBD) === |
||
| + | Si<sub>3</sub>N<sub>4</sub> [IBD] Historical Data |
||
| + | <br /> |
||
| + | ==Ta<sub>2</sub>O<sub>5</sub> [IBD]== |
||
| + | === Standard Recipe === |
||
| − | * [[Images/d/d3/IBD SiNdeposition.pdf|Si<sub>3</sub>N<sub>4</sub> Standard Recipe]] |
||
| − | + | Ta<sub>2</sub>O<sub>5</sub> [IBD] Standard Recipe |
|
| − | * Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014 |
||
| + | === Present Data === |
||
| − | * Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
||
| + | Ta<sub>2</sub>O<sub>5</sub> [IBD] Present Data |
||
| − | * HF e.r.~11nm/min |
||
| − | * Stress ≈ -1590MPa (compressive) |
||
| − | * Refractive Index: ≈ 1.969 |
||
| − | * [Cauchy Parameters] (350-2000nm): |
||
| − | ** A = 2.000 |
||
| − | ** B = 0.01974 |
||
| − | ** C = 1.2478e-4 |
||
| + | === Historical Data === |
||
| − | === SiO<sub>x</sub>N<sub>y</sub> deposition (IBD) === |
||
| + | Ta<sub>2</sub>O<sub>5</sub> [IBD] Historical Data |
||
| − | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info. |
||
| + | <br /> |
||
| − | {| class="wikitable" |
||
| + | ==TiO<sub>2</sub> [IBD]== |
||
| − | ! |
||
| − | |} |
||
| − | {| class="wikitable" |
||
| − | !IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow. |
||
| − | ! |
||
| − | |} |
||
| − | {| class="wikitable" |
||
| − | !Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow. |
||
| − | |} |
||
| + | === Standard Recipe === |
||
| − | === Ta<sub>2</sub>O<sub>5</sub> deposition (IBD) === |
||
| + | TiO<sub>2</sub> [IBD] Standard Recipe |
||
| − | + | === Present Data === |
|
| + | TiO<sub>2</sub> [IBD] Present Data |
||
| + | === Historical Data === |
||
| − | * [[Images/8/85/IBD Ta2O5 deposition details.pdf|Ta<sub>2</sub>O<sub>5</sub> Standard Recipe]] |
||
| − | + | TiO<sub>2</sub> [IBD] Historical Data |
|
| + | <br /> |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity 2014 |
||
| + | ==Al<sub>2</sub>O<sub>3</sub> [IBD] == |
||
| + | === Standard Recipe === |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Data December-15 min depositions 2015 |
||
| − | + | Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe |
|
| − | * Ta<sub>2</sub>O<sub>5</sub> Data December-1hr depositions 2015 |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity-1hr depositions 2015 |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Data December-1hr depositions 2016 |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity-1hr depositions 2016 |
||
| + | === Present Data === |
||
| − | ==== Ta2O5 Deposition/Film Properies (IBD) ==== |
||
| + | Al<sub>2</sub>O<sub>3</sub> [IBD] Present Data |
||
| + | === Historical Data === |
||
| − | * Ta2O5 1hr depositions: |
||
| + | Al<sub>2</sub>O<sub>3</sub> [IBD] Historical Data |
||
| − | * Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
||
| + | <br /> |
||
| − | * HF e.r.~2 nm/min |
||
| − | * Stress ≈ -232MPa (compressive) |
||
| − | * Refractive Index: ≈ 2.172 |
||
| − | * [Cauchy Parameters] (350-2000nm): |
||
| − | ** A = 2.1123 |
||
| − | ** B = 0.018901 |
||
| − | ** C = -0.016222 |
||
| + | == Standard Cleaning Procedure [ICP-PECVD] == |
||
| − | === TiO<sub>2</sub> deposition (IBD) === |
||
| + | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| − | |||
| − | * [[Images/3/3b/New IBD TiO2 deposition.pdf|TiO<sub>2</sub> Standard Recipe]] |
||
| − | * TiO<sub>2</sub> Data December 2014 |
||
| − | * TiO<sub>2</sub> Thickness uniformity 2014 |
||
| − | |||
| − | * Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
||
| − | * HF etch rate ~5.34nm/min |
||
| − | * Stress ≈ -445MPa (compressive) |
||
| − | * Refractive Index: ≈ 2.259 |
||
| − | * [Cauchy Parameters] (350-2000nm): |
||
| − | ** A = 2.435 |
||
| − | ** B = -4.9045e-4 |
||
| − | ** C = 0.01309 |
||
| − | * Absorbing < ~350nm |
||
| − | |||
| − | === Al<sub>2</sub>O<sub>3</sub> deposition (IBD) === |
||
| − | |||
| − | * Al2O3 standard recipe: 1_Al2O3_dep |
||
| − | |||
| − | * Al2O3 Data 2018 |
||
| − | * Al2O3 Thickness uniformity 2018 |
||
| − | |||
| − | * Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
||
| − | * HF etch rate ~167nm/min |
||
| − | * Stress ≈ -332MPa (compressive) |
||
| − | * Refractive Index: ≈ 1.656 |
||
| − | * [Cauchy Parameters] (350-2000nm):( working on) |
||
| − | ** A = |
||
| − | ** B = |
||
| − | ** C = |
||
| − | * Absorbing < ~350nm |
||
| − | |||
| − | == Reference Recipes (Disabled Tools) == |
||
| − | |||
| − | === [[Sputter 2 (SFI Endeavor)|<big>Sputter 2 (SFI Endeavor)</big>]] === |
||
| − | '''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.''' |
||
| − | '''Al Deposition (Sputter 2)''' |
||
| − | |||
| − | * [[Images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf|Al Deposition Recipe]] |
||
| − | |||
| − | '''AlN<sub>x</sub> Deposition (Sputter 2)''' |
||
| − | |||
| − | * [[Images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf|AlN<sub>x</sub> Deposition Recipe]] |
||
| − | |||
| − | '''Au Deposition (Sputter 2)''' |
||
| − | |||
| − | * [[Images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf|Au Deposition Recipe]] |
||
| + | *SiNx etches at 20nm/min |
||
| − | '''TiO<sub>2</sub> Deposition (Sputter 2)''' |
||
| + | *SiO<sub>2</sub> etches at 40nm/min |
||
| + | === Standard Clean Recipe === |
||
| − | * [[Images/c/c4/22-TiO2-Film-Sputter-2.pdf|TiO2<sub>2</sub> Deposition Recipe]] |
||
Revision as of 10:57, 30 November 2021
Back to Vacuum Deposition Recipes.
Contents
- 1 PECVD 1 (PlasmaTherm 790)
- 2 PECVD 2 (Advanced Vacuum)
- 3 ICP-PECVD (Unaxis VLR)
PECVD 1 (PlasmaTherm 790)
SiO2 [PECVD 1]
Standard Recipe
SiO2 [PECVD 1] Standard Recipe
Present Data
SiO2 [PECVD 1] Present Data
Historical Data
SiO2 [PECVD 1] Historical Data
Si3N4 [PECVD 1]
Standard Recipe
Si3N4 [PECVD 1] Standard Recipe
Present Data
Si3N4 [PECVD 1] Present Data
Historical Data
Si3N4 [PECVD 1] Historical Data
Low Stress Si3N4 [PECVD 2]
Standard Recipe
Low Stress Si3N4 [PECVD 1] Standard Recipe
Present Data
Low Stress Si3N4 [PECVD 1] Present Data
Historical Data
Low Stress Si3N4 [PECVD 1] Historical Data
Standard Cleaning Procedure [PECVD 1]
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Cleaning Recipe [CF4/O2 Clean]
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
SiO2 [PECVD 2]
Standard Recipe
SiO2 [PECVD 2] Standard Recipe
Present Data
SiO2 [PECVD 2] Present Data
Historical Data
SiO2 [PECVD 2] Historical Data
Si3N4 [PECVD 2]
Standard Recipe
Si3N4 [PECVD 2] Standard Recipe
Present Data
Si3N4 [PECVD 2] Present Data
Historical Data
Si3N4 [PECVD 2] Historical Data
Low Stress Si3N4 [PECVD 2]
Standard Recipe
Low Stress Si3N4 [PECVD 2] Standard Recipe
Present Data
Low Stress Si3N4 [PECVD 2] Present Data
Historical Data
Low Stress Si3N4 [PECVD 2] Historical Data
Standard Cleaning Procedure [PECVD 2]
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe [STD CF4/O2 Clean recipe]
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
Low Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe
Present Data
Low Deposition Rate SiO2 [ICP-PECVD] Present Data
Historical Data
Low Deposition Rate SiO2 [ICP-PECVD] Historical Data
High Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
High SiO2 [ICP-PECVD] Standard Recipe
Present Data
High SiO2 [ICP-PECVD] Present Data
Historical Data
High SiO2 [ICP-PECVD] Historical Data
Si3N4 [ICP-PECVD]
Standard Recipe
Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Si3N4 [ICP-PECVD] Present Data
Historical Data
Si3N4 [ICP-PECVD] Historical Data
Low Stress Si3N4 [ICP-PECVD]
Standard Recipe
Low Stress Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Low Stress Si3N4 [ICP-PECVD] Present Data
Historical Data
Low Stress Si3N4 [ICP-PECVD] Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
Ion Beam Deposition (Veeco NEXUS)
SiO2 [IBD]
Standard Recipe
SiO2 [IBD] Standard Recipe
Present Data
SiO2 [IBD] Present Data
Historical Data
SiO2 [IBD] Historical Data
Si3N4 [IBD]
Standard Recipe
Si3N4 [IBD] Standard Recipe
Present Data
Si3N4 [IBD] Present Data
Historical Data
Si3N4 [IBD] Historical Data
Ta2O5 [IBD]
Standard Recipe
Ta2O5 [IBD] Standard Recipe
Present Data
Ta2O5 [IBD] Present Data
Historical Data
Ta2O5 [IBD] Historical Data
TiO2 [IBD]
Standard Recipe
TiO2 [IBD] Standard Recipe
Present Data
TiO2 [IBD] Present Data
Historical Data
TiO2 [IBD] Historical Data
Al2O3 [IBD]
Standard Recipe
Al2O3 [IBD] Standard Recipe
Present Data
Al2O3 [IBD] Present Data
Historical Data
Al2O3 [IBD] Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min