Difference between revisions of "Old Deposition Data - NastaziaM 2021-11-22"
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(Copied all current wiki pages: P1, P2, UNAXIS IBD) |
(modified PECVD1 and PECVD 1 for same titles as old data) |
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| + | =NEW data templates:= |
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| − | <big>Back to [[Vacuum Deposition Recipes]] |
+ | <big>Back to [[Vacuum Deposition Recipes]]</big> |
| + | =[[PECVD 1 (PlasmaTherm 790)]]= |
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| − | == Contents == |
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| + | ===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots] - SiO2, SiN and Particulate Count=== |
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| − | * [[PECVD Recipes#PECVD%201%20.28PlasmaTherm%20790.29|1 PECVD 1 (PlasmaTherm 790)]] |
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| − | ** [[PECVD Recipes#Historical%20Particulate%20Data|1.1 Historical Particulate Data]] |
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| − | ** [[PECVD Recipes#SiN%20deposition%20.28PECVD%20.231.29|1.2 SiN deposition (PECVD #1)]] |
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| − | *** [[PECVD Recipes#Historical%20Data|1.2.1 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties|1.2.1.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Uniformity%20Data|1.2.1.2 Uniformity Data]] |
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| − | ** [[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.231.29|1.3 SiO<sub>2</sub> deposition (PECVD #1)]] |
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| − | *** [[PECVD Recipes#Historical%20Data%202|1.3.1 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%202|1.3.1.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Thick-Film%20Properties|1.3.1.2 Thick-Film Properties]] |
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| − | *** [[PECVD Recipes#Uniformity%20Data%202|1.3.2 Uniformity Data]] |
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| − | ** [[PECVD Recipes#Low-Stress%20SiN%20-%20LS-SiN%20.28PECVD.231.29|1.4 Low-Stress SiN - LS-SiN (PECVD#1)]] |
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| − | ** [[PECVD Recipes#SiOxNy%20deposition%20.28PECVD%20.231.29|1.5 SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)]] |
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| − | ** [[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.231.29|1.6 Cleaning Recipes (PECVD #1)]] |
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| − | *** [[PECVD Recipes#Standard%20Cleaning%20Recipe:%20.22CF4.2FO2%20Clean.22|1.6.1 Standard Cleaning Recipe: "CF4/O2 Clean"]] |
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| − | * [[PECVD Recipes#PECVD%202%20.28Advanced%20Vacuum.29|2 PECVD 2 (Advanced Vacuum)]] |
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| − | ** [[PECVD Recipes#Historical%20Particulate%20Data%202|2.1 Historical Particulate Data]] |
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| − | ** [[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.232.29|2.2 SiO<sub>2</sub> deposition (PECVD #2)]] |
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| − | *** [[PECVD Recipes#Standard%20Recipe|2.2.1 Standard Recipe]] |
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| − | *** [[PECVD Recipes#Historical%20Data%203|2.2.2 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%203|2.2.2.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%204|2.2.2.2 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Uniformity%20Data%203|2.2.2.3 Uniformity Data]] |
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| − | ** [[PECVD Recipes#SiN%20deposition%20.28PECVD%20.232.29|2.3 SiN deposition (PECVD #2)]] |
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| − | *** [[PECVD Recipes#Standard%20Recipe%202|2.3.1 Standard Recipe]] |
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| − | *** [[PECVD Recipes#Historical%20Data%204|2.3.2 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%205|2.3.2.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Uniformity%20Data%204|2.3.2.2 Uniformity Data]] |
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| − | ** [[PECVD Recipes#Low-Stress%20SiN%20deposition%20.28PECVD%20.232.29|2.4 Low-Stress SiN deposition (PECVD #2)]] |
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| − | *** [[PECVD Recipes#Standard%20Recipe%203|2.4.1 Standard Recipe]] |
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| − | *** [[PECVD Recipes#Historical%20Data%205|2.4.2 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%206|2.4.2.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Uniformity%20Data%205|2.4.2.2 Uniformity Data]] |
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| − | ** [[PECVD Recipes#Amorphous-Si%20deposition%20.28PECVD%20.232.29|2.5 Amorphous-Si deposition (PECVD #2)]] |
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| − | ** [[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.232.29|2.6 Cleaning Recipes (PECVD #2)]] |
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| − | *** [[PECVD Recipes#Cleaning%20Procedure%20.28PECVD.232.29|2.6.1 Cleaning Procedure (PECVD#2)]] |
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| − | *** [[PECVD Recipes#Standard%20Clean%20Recipe:%20.22STD%20CF4.2FO2%20Clean%20recipe.22|2.6.2 Standard Clean Recipe: "STD CF4/O2 Clean recipe"]] |
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| − | *** [[PECVD Recipes#Clean%20Times%20.28PECVD.232.29|2.6.3 Clean Times (PECVD#2)]] |
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| − | * [[PECVD Recipes#ICP-PECVD%20.28Unaxis%20VLR.29|3 ICP-PECVD (Unaxis VLR)]] |
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| − | ** [[PECVD Recipes#Historical%20Particulate%20Data%203|3.1 Historical Particulate Data]] |
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| − | ** [[PECVD Recipes#Standard%20Recipes|3.2 Standard Recipes]] |
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| − | ** [[PECVD Recipes#SiO2%20LDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.3 SiO2 LDR 250C Deposition (Unaxis VLR)]] |
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| − | *** [[PECVD Recipes#Historical%20Data%206|3.3.1 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%207|3.3.1.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Uniformity%20Data%206|3.3.1.2 Uniformity Data]] |
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| − | ** [[PECVD Recipes#SiO2%20HDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.4 SiO2 HDR 250C Deposition (Unaxis VLR)]] |
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| − | *** [[PECVD Recipes#Historical%20Data%207|3.4.1 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%208|3.4.1.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Uniformity%20Data%207|3.4.1.2 Uniformity Data]] |
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| − | ** [[PECVD Recipes#SiN%20250C%20deposition%20.28Unaxis%20VLR.29|3.5 SiN 250C deposition (Unaxis VLR)]] |
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| − | *** [[PECVD Recipes#Historical%20Data%208|3.5.1 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%209|3.5.1.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Uniformity%20Data%208|3.5.1.2 Uniformity Data]] |
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| − | ** [[PECVD Recipes#SiN%20LS%20250C%20Deposition%20.28Unaxis%20VLR.29|3.6 SiN LS 250C Deposition (Unaxis VLR)]] |
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| − | *** [[PECVD Recipes#Historical%20Data%209|3.6.1 Historical Data]] |
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| − | **** [[PECVD Recipes#Thin-Film%20Properties%2010|3.6.1.1 Thin-Film Properties]] |
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| − | **** [[PECVD Recipes#Uniformity%20Data%209|3.6.1.2 Uniformity Data]] |
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| − | ** [[PECVD Recipes#Cleaning%20Recipes%20.28Unaxis%20VLR%20Dep.29|3.7 Cleaning Recipes (Unaxis VLR Dep)]] |
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| + | ==SiO<sub>2</sub> deposition (PECVD #1)== |
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| − | = [[PECVD 1 (PlasmaTherm 790)]] = |
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| + | * SiO<sub>2</sub> [PECVD 1] Standard Recipe |
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| − | ==== Historical Particulate Data ==== |
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| + | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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| + | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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| + | ==SiN deposition (PECVD #1)== |
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| − | * Particulates(Gain4) in PECVD#1-OLD DATA 2015 |
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| − | * Particulates(Gain4) in PECVD#1-OLD DATA 2016 |
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| − | * Particulates(Gain4) in PECVD#1-OLD DATA 2017 |
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| − | * Particulates in PECVD#1 films 2017 |
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| − | * Particulates in PECVD#1 films 2018 |
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| − | * Particulates in PECVD#1 films 2019 |
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| − | * Particulates in PECVD#1 films 2020 |
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| − | * Particulates in PECVD#1 films 2021 |
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| + | * Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
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| − | == SiN deposition (PECVD #1) == |
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| + | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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| + | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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| + | ==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)== |
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| − | * Si3N4 Standard Recipe |
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| + | * Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
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| − | ==== Historical Data ==== |
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| + | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1515630363 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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| + | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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| + | ==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
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| − | ===== Thin-Film Properties ===== |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
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| − | * SiN 100nm Data 2014 |
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| + | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] |
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| − | * SiN 100nm Data 2015 |
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| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
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| − | * SiN 100nm Data 2016 |
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| − | * SiN 100nm Data 2017 |
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| − | * SiN 300nm Data 2017 |
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| − | * SiN 300nm Data 2018 |
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| − | * SiN 300nm Data 2019 |
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| − | * SiN 300nm Data 2020 |
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| − | * SiN 300nm Data 2021 |
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| + | ==Standard Cleaning Procedure (PECVD #1)== |
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| − | ===== Uniformity Data ===== |
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| + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
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| + | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
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| − | * SiN 100 nm Thickness uniformity 2014 |
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| + | #Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
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| − | * SiN 100 nm Thickness uniformity 2015 |
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| − | * SiN 100 nm Thickness uniformity 2016 |
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| − | * SiN 100 nm Thickness uniformity 2017 |
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| − | * SiN 300nm Thickness uniformity 2017 |
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| − | * SiN 300nm Thickness uniformity 2018 |
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| − | * SiN 300nm Thickness uniformity 2019 |
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| − | * SiN 300nm Thickness uniformity 2020 |
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| − | * SiN 300nm Thickness uniformity 2021 |
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| + | ===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]=== |
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| − | == SiO<sub>2</sub> deposition (PECVD #1) == |
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| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it. |
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| + | =[[PECVD 2 (Advanced Vacuum)]]= |
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| − | * SiO2 Standard Recipe |
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| + | ===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Plots]=== |
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| − | ==== Historical Data ==== |
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| + | ==SiO<sub>2</sub> deposition (PECVD #2)== |
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| − | ===== Thin-Film Properties ===== |
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| + | SiO<sub>2</sub> [PECVD 2] Standard Recipe |
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| + | [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Present Data</nowiki>] |
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| − | * SiO<sub>2</sub> 100nm Data 2014 |
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| − | * SiO<sub>2</sub> 100nm Data 2015 |
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| − | * SiO<sub>2</sub> 100nm Data 2016 |
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| − | * SiO<sub>2</sub> 100nm Data 2017 |
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| − | * SiO<sub>2</sub> 300nm Data 2017 |
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| − | * SiO<sub>2</sub> 300nm Data 2018 |
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| − | * SiO<sub>2</sub> 300nm Data 2019 |
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| − | * SiO<sub>2</sub> 300nm Data 2020 |
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| − | * SiO<sub>2</sub> 300nm Data 2021 |
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| + | [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] |
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| − | ===== Thick-Film Properties ===== |
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| + | ==SiN deposition (PECVD #2)== |
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| + | ===Standard Recipe=== |
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| − | * SiO<sub>2</sub> Thick film Data 2021 |
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| + | Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
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| − | === |
+ | ===Present Data=== |
| + | [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Present Data</nowiki>] |
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| + | ===Historical Data=== |
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| − | * SiO<sub>2</sub> 100nm Thickness uniformity 2014 |
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| + | [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] |
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| − | * SiO<sub>2</sub> 100 nm Thickness uniformity 2015 |
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| − | * SiO<sub>2</sub> 100 nmThickness uniformity 2016 |
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| − | * SiO<sub>2</sub> 100nm Thickness uniformity 2017 |
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| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2017 |
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| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2018 |
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| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2019 |
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| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2020 |
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| − | * SiO<sub>2</sub> 300nm Thickness uniformity 2021 |
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| − | == |
+ | ==Low-Stress SiN deposition (PECVD #2)== |
| + | ''Low-Stress SilIcon Nitride, Si<sub>3</sub>N<sub>4</sub> (< 100 MPa)'' |
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| + | * Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
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| − | * [[Images/4/4a/New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]] |
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| + | * [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Present Data</nowiki>] |
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| − | * LS SiN Data 2014 |
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| + | * [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=268003895 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] |
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| − | * LS SiN 1000A Thickness uniformity 2014 |
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| − | == |
+ | ==Amorphous-Si deposition (PECVD #2)== |
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
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| − | * [[Images/2/24/New PECVD1-LS SION-recipe 2014 LS SION recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]] |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress] |
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| − | * SiO<sub>x</sub>N<sub>y</sub> Data 2014 |
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| − | * SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014 |
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| − | == Cleaning |
+ | ==Standard Cleaning Procedure (PECVD #2)== |
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
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| − | # Wet cleaning |
+ | #(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
| − | # |
+ | #Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
| − | === Standard |
+ | ===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]=== |
| − | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will |
+ | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it. |
| − | = [[PECVD 2 (Advanced Vacuum)]] = |
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| + | '''Clean Times (PECVD#2''') |
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| − | ==== Historical Particulate Data ==== |
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| + | {| class="wikitable" |
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| + | !Film Deposited |
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| + | !Cleaning Time (Dry) |
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| + | |- |
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| + | |SiO<sub>2</sub> |
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| + | |1 min. clean for every 1 min. deposition |
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| + | |- |
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| + | |Si<sub>3</sub>N<sub>4</sub> |
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| + | |1 min. clean for every 7 min of deposition |
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| + | |- |
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| + | |If > 29min total dep time |
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| + | (Season + Dep) |
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| + | |Wet Clean the Upper Lid/Chamber |
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| + | DI water then Isopropyl Alcohol on chamber wall & portholes |
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| + | |} |
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| + | =[[ICP-PECVD (Unaxis VLR)]]= |
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| − | * Particulates (Gain4) in PECVD#2 2015 |
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| + | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber. |
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| − | * Particulates (Gain4) in PECVD#2 2016 |
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| − | * Particulates (Gain4) in PECVD#2 2017 |
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| + | The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
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| − | * Particulates in PECVD#2 films 2017 |
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| − | * Particulates in PECVD#2 films 2018 |
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| − | * Particulates in PECVD#2 films 2019 |
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| − | * Particulates in PECVD#2 films 2020 |
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| − | * Particulates in PECVD#2 films 2021 |
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| + | ===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Plots]=== |
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| − | == SiO<sub>2</sub> deposition (PECVD #2) == |
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| + | ==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
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| − | ==== Standard Recipe ==== |
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| − | + | ===Standard Recipe=== |
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| + | Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
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| − | === |
+ | ===Present Data=== |
| + | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
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| + | ===Historical Data=== |
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| − | ===== Thin-Film Properties ===== |
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| + | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
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| + | ==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
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| − | * Oxide Data 2014 |
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| − | * Oxide Data 2015 |
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| − | * Oxide data 2016 |
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| − | * Oxide Data 2017 |
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| − | * Oxide Data 2018 |
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| − | * Oxide Data 2019 |
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| − | * Oxide Data 2020 |
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| − | * Oxide Data 2021 |
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| + | ===Standard Recipe=== |
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| − | ===== Thin-Film Properties ===== |
||
| + | High Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
||
| − | + | ===Present Data=== |
|
| + | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
||
| − | === |
+ | ===Historical Data=== |
| + | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
||
| + | ==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
||
| + | ===Standard Recipe=== |
||
| − | * Oxide Thickness Uniformity 2014 |
||
| + | Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
||
| − | * Oxide Thickness Uniformity 2015 |
||
| − | * Oxide Thickness Uniformity 2016 |
||
| − | * Oxide Thickness Uniformity 2017 |
||
| − | * Oxide Thickness Uniformity 2018 |
||
| − | * Oxide Thickness Uniformity 2019 |
||
| − | * Oxide Thickness Uniformity 2020 |
||
| − | * Oxide Thickness Uniformity 2021 |
||
| + | ===Present Data=== |
||
| − | == SiN deposition (PECVD #2) == |
||
| + | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
||
| − | === |
+ | ===Historical Data=== |
| + | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
||
| + | ==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
||
| − | * [[Images/4/4c/SiNx Films by PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]] |
||
| − | * STD Nitride2 Recipe |
||
| − | === |
+ | ===Standard Recipe=== |
| + | Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
||
| + | ===Present Data=== |
||
| − | ===== Thin-Film Properties ===== |
||
| + | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
||
| − | + | ===Historical Data=== |
|
| + | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
||
| − | * Nitride2 Data 2015 |
||
| + | ==Standard Cleaning Procedure [ICP-PECVD]== |
||
| − | * Nitride2 Data 2016 |
||
| + | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| − | * Nitride2 Data 2017 |
||
| − | * Nitride2 Data 2018 |
||
| − | * Nitride2 Data 2019 |
||
| − | * Nitride2 Data 2020 |
||
| − | * Nitride2 Data 2021 |
||
| + | *SiNx etches at 20nm/min |
||
| − | ===== Uniformity Data ===== |
||
| + | *SiO<sub>2</sub> etches at 40nm/min |
||
| + | ===Standard Clean Recipe=== |
||
| − | * Nitride2 Thickness Uniformity 2014 |
||
| + | =[[Ion Beam Deposition (Veeco NEXUS)]]= |
||
| − | * Nitride2 Thickness Uniformity 2015 |
||
| − | * Nitride2 Thickness Uniformity 2016 |
||
| − | * Nitride2 Thickness Uniformity 2017 |
||
| − | * Nitride2 Thickness Uniformity 2018 |
||
| − | * Nitride2 Thickness Uniformity 2019 |
||
| − | * Nitride2 Thickness Uniformity 2020 |
||
| − | * Nitride2 Thickness Uniformity 2021 |
||
| + | ===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Plots]=== |
||
| − | == Low-Stress SiN deposition (PECVD #2) == |
||
| − | ''Low-Stress SilIcon Nitride (< 100 MPa)'' |
||
| + | ==SiO<sub>2</sub> [IBD]== |
||
| − | ==== Standard Recipe ==== |
||
| − | + | ===Standard Recipe=== |
|
| + | SiO<sub>2</sub> [IBD] Standard Recipe |
||
| − | * ''Old Versions:'' |
||
| − | ** [[Images/a/a5/New AdvPECVD-LS Nitride2 300C standard recipe LS Nitride2 standard recipe.pdf|LS Nitride2 Standard Recipe 2014-5/9/2018]] |
||
| − | ** [[Images/0/01/STD LSNitride2 5-9-18.pdf|STD LSNitride2 5/9/2018]] |
||
| − | === |
+ | ===Present Data=== |
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Present Data</nowiki>] |
||
| + | ===Historical Data=== |
||
| − | ===== Thin-Film Properties ===== |
||
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=700537698 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] |
||
| + | ==Si<sub>3</sub>N<sub>4</sub> [IBD]== |
||
| − | * LS Nitride2 Data 2014 |
||
| − | * LS Nitride2 Data 2015 |
||
| − | * LS Nitride2 Data 2016 |
||
| − | * LS Nitride2 Data 2017 |
||
| − | * LS Nitride2 Data 2018 |
||
| − | * LS Nitride2 Data 2019 |
||
| − | * LS Nitride2 Data 2020 |
||
| − | * LS Nitride2 Data 2021 |
||
| − | === |
+ | ===Standard Recipe=== |
| + | Si<sub>3</sub>N<sub>4</sub> [IBD] Standard Recipe |
||
| + | ===Present Data=== |
||
| − | * LS Nitride2 Thickness Uniformity 2014 |
||
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Present Data</nowiki>] |
||
| − | * LS Nitride2 Thickness Uniformity 2015 |
||
| − | * LS Nitride2 Thickness Uniformity 2016 |
||
| − | * LS Nitride2 Thickness Uniformity 2017 |
||
| − | * LS Nitride2 Thickness Uniformity 2018 |
||
| − | * LS Nitride2 Thickness Uniformity 2019 |
||
| − | * LS Nitride2 Thickness Uniformity 2020 |
||
| − | * LS Nitride2 Thickness Uniformity 2021 |
||
| + | ===Historical Data=== |
||
| − | == Amorphous-Si deposition (PECVD #2) == |
||
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2093120876 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Historical Data</nowiki>] |
||
| + | ==Ta<sub>2</sub>O<sub>5</sub> [IBD]== |
||
| + | ===Standard Recipe=== |
||
| − | * [[Images/9/9d/03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]] |
||
| + | Ta<sub>2</sub>O<sub>5</sub> [IBD] Standard Recipe |
||
| − | * [[Images/0/09/ASi deposition and film stress using AV dep tool.pdf|Amorphous Si Films and Their Stress]] |
||
| + | ===Present Data=== |
||
| − | == Cleaning Recipes (PECVD #2) == |
||
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Present Data</nowiki>] |
||
| + | ===Historical Data=== |
||
| − | === Cleaning Procedure (PECVD#2) === |
||
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1075234846 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] |
||
| − | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| + | ==Al<sub>2</sub>O<sub>3</sub> [IBD]== |
||
| + | ===Standard Recipe=== |
||
| − | # (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
||
| + | Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe |
||
| − | # Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
||
| + | ===Present Data=== |
||
| − | === Standard Clean Recipe: "STD CF4/O2 Clean recipe" === |
||
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Present Data</nowiki>] |
||
| − | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
| + | ===Historical Data=== |
||
| − | === Clean Times (PECVD#2) === |
||
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1294329492 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Historical Data</nowiki>] |
||
| − | {| class="wikitable" |
||
| + | ==TiO<sub>2</sub> [IBD]== |
||
| − | !Film Deposited |
||
| − | !Cleaning Time (Dry) |
||
| − | |- |
||
| − | |SiO<sub>2</sub> |
||
| − | |1 min. clean for every 1 min. deposition |
||
| − | |- |
||
| − | |Si<sub>3</sub>N<sub>4</sub> |
||
| − | |1 min. clean for every 7 min of deposition |
||
| − | |- |
||
| − | |If > 29min total dep time |
||
| − | (Season + Dep) |
||
| − | |Wet Clean the Upper Lid/Chamber |
||
| − | DI water then Isopropyl Alcohol on chamber wall & portholes |
||
| − | |} |
||
| + | ===Standard Recipe=== |
||
| − | = [[ICP-PECVD (Unaxis VLR)]] = |
||
| + | TiO<sub>2</sub> [IBD] Standard Recipe |
||
| − | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|'''new procedures''']] to ensure low particle counts in the chamber. |
||
| + | ===Present Data=== |
||
| − | The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
||
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Present Data</nowiki>] |
||
| − | === |
+ | ===Historical Data=== |
| + | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1327808550 TiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] |
||
| + | ==Standard Cleaning Procedure [ICP-PECVD]== |
||
| + | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| + | *SiNx etches at 20nm/min |
||
| − | * Particulates in Unaxis films @250C-2019 |
||
| + | *SiO<sub>2</sub> etches at 40nm/min |
||
| − | * Particulates in Unaxis films @250C-2020 |
||
| − | === |
+ | ===Standard Clean Recipe=== |
| − | * SiO2 LDR 250C Recipe-2020 |
||
| − | * SiO2 HDR 250C Recipe-2020 |
||
| − | * SiN 250C Recipe-2020 |
||
| − | * SiN LS 250C Recipe-2020 |
||
| − | == SiO2 LDR 250C Deposition (Unaxis VLR) == |
||
| − | ''Low-Deposition Rate SiO<sub>2</sub>'' |
||
| + | <br /> |
||
| − | ==== Historical Data ==== |
||
| + | =OLD Data= |
||
| − | ===== Thin-Film Properties ===== |
||
| + | Copied on 2021-12-14 |
||
| − | This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| − | * SiO2 LDR 250C 300nm Data-2019 |
||
| − | * SiO2 LDR 250C 300nm Data-2020 |
||
| − | ===== Uniformity Data ===== |
||
| + | {{recipes|Vacuum Deposition}} |
||
| − | * Thickness Uniformity SiO2 LDR 250C 300nm-2019 |
||
| − | * Thickness Uniformity SiO2 LDR 250C 300nm-2020 |
||
| + | =[[PECVD 1 (PlasmaTherm 790)]]= |
||
| − | == SiO2 HDR 250C Deposition (Unaxis VLR) == |
||
| + | ====Historical Particulate Data==== |
||
| − | ''High-Deposition Rate SiO<sub>2</sub>'' |
||
| + | *[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2015] |
||
| − | ==== Historical Data ==== |
||
| + | *[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1VN551M2oXGWX306HDLQXvZIp3kgxEvWffQqMqnc8ISk/edit#gid=sharing Particulates in PECVD#1 films 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/11c0gQHnattIjVO95aBqiL-zL4DInRFihV-YB54xLT40/edit#gid=sharing Particulates in PECVD#1 films 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1ct-SSCRxf81W0jupCWzh81n0DBwPv6mwKFMzuWu_0TI/edit#gid=sharing Particulates in PECVD#1 films 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1yks0OgH8rpbYjin_Qr8vpPg8jBiZQRs_PKfyfo-Rqg0/edit#gid=sharing Particulates in PECVD#1 films 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/1vSmymaS_NNXW-ouC8Ky1J6iVSla7uyRB2zf1lGMa31g/edit#gid=sharing Particulates in PECVD#1 films 2021] |
||
| − | == |
+ | ==SiN deposition (PECVD #1)== |
| − | This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| + | *[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4 Standard Recipe] |
||
| − | * SiO2 HDR 250C 300nm Data-2019 |
||
| − | * SiO2 HDR 250C 300nm Data-2020 |
||
| − | ==== |
+ | ====Historical Data==== |
| + | =====Thin-Film Properties===== |
||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014] |
||
| − | * Thickness Uniformity SiO2 HDR 250C 300nm-2019 |
||
| + | *[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN 100nm Data 2015] |
||
| − | * Thickness Uniformity SiO2 HDR 250C 300nm-2020 |
||
| + | *[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN 100nm Data 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN 100nm Data 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1UlyvPcXUBQ5R2JwjKOjELvtCJaTElVhJHfzgjyaRd2A/edit#gid=sharing SiN 300nm Data 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1pAoTCaNSf0uZMyiQ2qKFd0s_e4e53P9Z1jUwtmTnlLk/edit#gid=sharing SiN 300nm Data 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1Pnw8eEaQ0rGblRYl6LeIm6wrh1hgeyjnHEbA4BzV8JM/edit#gid=sharing SiN 300nm Data 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1N_1Kk6J-wA4nlHpFg5EMDZNHR1kLDo_fr_Dvc6osSr4/edit#gid=sharing SiN 300nm Data 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/13jY5T_PW1a3GjHIbR0GuUbIhmxClQfvLgzaUtl3YniE/edit#gid=sharing SiN 300nm Data 2021] |
||
| + | =====Uniformity Data===== |
||
| − | == SiN 250C deposition (Unaxis VLR) == |
||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014] |
||
| − | ==== Historical Data ==== |
||
| + | *[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 100 nm Thickness uniformity 2015] |
||
| + | *[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 100 nm Thickness uniformity 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 100 nm Thickness uniformity 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1Z83RCH5cAUfViO6vv6hAatcLVWZ95ex4nDdfffm9I7s/edit#gid=sharing SiN 300nm Thickness uniformity 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1b4EQZdRtVbqNwGBrItoG5-tz6RIzlsvBiCFR6ZXfylw/edit#gid=sharing SiN 300nm Thickness uniformity 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1-OiaH8frAzJzHKfbYTJP808ddzk1Wsv_CixDzG-sSfo/edit#gid=sharing SiN 300nm Thickness uniformity 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1e5ycwODa-VooEzGjhY4XquvJpuAuIQHHHZSRwZaH5-E/edit#gid=sharing SiN 300nm Thickness uniformity 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/1Re5xwB5WMgsgDHsi_0dUeL62uWAnqDQtoBoaR7lj8cI/edit#gid=sharing SiN 300nm Thickness uniformity 2021] |
||
| + | ==SiO<sub>2</sub> deposition (PECVD #1)== |
||
| − | ===== Thin-Film Properties ===== |
||
| − | This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| + | *[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO2 Standard Recipe] |
||
| − | * SiN 250C 300nm Data-2020 |
||
| − | ==== |
+ | ====Historical Data==== |
| + | =====Thin-Film Properties===== |
||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014] |
||
| − | * Thickness Uniformity SiN 250C 300nm-2020 |
||
| + | *[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2015] |
||
| + | *[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1QbhukSuVNueT067IVEpweSlD4B7GQecf-tfQFQeV6Xs/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1OwyhfFPDH-XLPczA8cKoBPnujq9oNukaWkHq0KoFS40/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/1I-0Ih_F9pWeOwXeEQC6IFYKNB6bBLSoBiyX8Eu3pwFg/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2021] |
||
| + | =====Thick-Film Properties===== |
||
| − | == SiN LS 250C Deposition (Unaxis VLR) == |
||
| − | ''Low Stress Silicon-Nitride'' |
||
| + | *[https://docs.google.com/spreadsheets/d/1XgUlCaCv3jCK9RyrI553PkIS0PmiAlbWjsDwK5TOH3I/edit#gid=sharing SiO<sub>2</sub> Thick film Data 2021] |
||
| − | ==== Historical Data ==== |
||
| − | ''To Be Added'' |
||
| − | ==== |
+ | ====Uniformity Data==== |
| − | This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014] |
||
| − | * SiN LS 250C 300nm Data-2020 |
||
| + | *[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 100 nm Thickness uniformity 2015] |
||
| + | *[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 100 nmThickness uniformity 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1Fa8mZIBIeJwvCwUbJ-28VcvVYj8rshhuDuXsYxA-cD8/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1YB_9USpuXGpIdSW2gNsptu5nSrLWAGsYu0SWoYEy0aQ/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1FatUAEegWuDRzVa47L1_cqgRs0AZ_Fao9jpwz5sfln0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1uAIEv_z2TJtY2XxTYnDIyKwKT4ZIhalTCyZ5SrDRJmA/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/1jThamYtEiH3lVz4IzoG9ILxBG8-TufIKnUd8V0qKQU0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2021] |
||
| + | ==Low-Stress SiN - LS-SiN (PECVD#1)== |
||
| − | ===== Uniformity Data ===== |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe] |
||
| − | * Thickness Uniformity SiN LS 250C 300nm-2020 |
||
| + | *[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data 2014] |
||
| + | *[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014] |
||
| + | ==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
||
| − | == Cleaning Recipes (Unaxis VLR Dep) == |
||
| − | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
||
| − | * SiNx etches at 20nm/min |
||
| + | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] |
||
| − | * SiO2 etches at 40nm/min |
||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
||
| + | ==Cleaning Recipes (PECVD #1)== |
||
| + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| + | |||
| + | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
||
| + | #Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
||
| + | |||
| + | ===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe: "CF4/O2 Clean"]=== |
||
| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
| + | =[[PECVD 2 (Advanced Vacuum)]]= |
||
| + | ====Historical Particulate Data==== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015] |
||
| + | *[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017] |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates in PECVD#2 films 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1aU6fTyQ5MlGD4uCa9gepG5rLJzW3wlkOWSKEl_w_Ye4/edit#gid=sharing Particulates in PECVD#2 films 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1OPZXe8g3H0wywIrPFel3nSZ5iyPs2mVIYUSVKfTtMDg/edit#gid=sharing Particulates in PECVD#2 films 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1Y9lomsf7bDojeXoAsEG7xvypx_sw_atpmPwB9xtK1Zk/edit#gid=sharing Particulates in PECVD#2 films 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/1BauS7q_sGKkaeY6o3BOw2wyQsyS_DukJxCAbGantDW4/edit#gid=sharing Particulates in PECVD#2 films 2021] |
||
| + | |||
| + | ==SiO<sub>2</sub> deposition (PECVD #2)== |
||
| + | ====Standard Recipe==== |
||
<br /> |
<br /> |
||
| + | *[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= STD SiO2 Recipe] |
||
| − | == [[Ion Beam Deposition (Veeco NEXUS)]] == |
||
| + | ====Historical Data==== |
||
| − | * IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc. |
||
| + | =====Thin-Film Properties===== |
||
| − | ** '''All users are required to enter their calibration deps (simple test deps only)''' |
||
| − | * Particulates in SiO2 and Ta2O5 in 2015 |
||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014] |
||
| − | === SiO<sub>2</sub> deposition (IBD) === |
||
| + | *[https://docs.google.com/spreadsheets/d/1d5boeJRWWgMqvQe6nVM7m8s3KAcS4Yp2L5CEU9svkX4/edit#gid=sharing Oxide Data 2015] |
||
| + | *[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1VI-sUmaqois0NsCvf2kQmPfRRa03MjBzl779hmmLtP4/edit#gid=sharing Oxide Data 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1oWnQ3D6oknKWU2bohvSrN85rlEZgQN3YP_ZJ4i8u7do/edit#gid=sharing Oxide Data 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Data 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/10XA3WnHjUZOLFunwUIlM2IqaRIiX_EGb6Jj_bw84gkI/edit#gid=sharing Oxide Data 2021] |
||
| + | =====Thin-Film Properties===== |
||
| − | ==== SiO<sub>2</sub> Historical Data ==== |
||
| + | *[https://docs.google.com/spreadsheets/d/19Z8IAVgumWuH0t8RN23LJ2wWZP7jYYLwRl9pDQP4obI/edit#gid=sharing Thick Oxide Data 2021] |
||
| − | * [[Images/8/8d/New IBD SiO2 Standard Recipe.pdf|SiO<sub>2</sub> Standard Recipe]] |
||
| − | * SiO<sub>2</sub> Data December 2014 |
||
| − | * SiO<sub>2</sub> Thickness uniformity 2014 |
||
| − | * SiO<sub>2</sub> Data-15min depositions 2015 |
||
| − | * SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015 |
||
| − | * SiO<sub>2</sub> Data-1hr depositions 2015 |
||
| − | * SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015 |
||
| − | * SiO<sub>2</sub> Data-1hr depositions 2016 |
||
| − | * SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016 |
||
| + | =====Uniformity Data===== |
||
| − | ==== SiO<sub>2</sub> 1hr deposition properties: ==== |
||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014] |
||
| − | * Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
||
| + | *[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015] |
||
| − | * HF e.r.~350 nm/min |
||
| + | *[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016] |
||
| − | * Stress ≈ -390MPa (compressive) |
||
| + | *[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017] |
||
| − | * Refractive Index: ≈ 1.494 |
||
| + | *[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2018] |
||
| − | * [Cauchy Parameters] (350-2000nm): |
||
| + | *[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019] |
||
| − | ** A = 1.480 |
||
| + | *[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Thickness Uniformity 2020] |
||
| − | ** B = 0.00498 |
||
| + | *[https://docs.google.com/spreadsheets/d/1b9Fmzp_d-XiMerFtrDiCsmS7NMNoaBtS8T0DLqoii8Y/edit#gid=sharing Oxide Thickness Uniformity 2021] |
||
| − | ** C = -3.2606e-5 |
||
| − | == |
+ | ==SiN deposition (PECVD #2)== |
| + | ====Standard Recipe==== |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate] |
||
| − | * [[Images/d/d3/IBD SiNdeposition.pdf|Si<sub>3</sub>N<sub>4</sub> Standard Recipe]] |
||
| + | *[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= STD Nitride2 Recipe] |
||
| − | * Si<sub>3</sub>N<sub>4</sub> Data December 2014 |
||
| − | * Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014 |
||
| + | ====Historical Data==== |
||
| − | * Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
||
| + | =====Thin-Film Properties===== |
||
| − | * HF e.r.~11nm/min |
||
| − | * Stress ≈ -1590MPa (compressive) |
||
| − | * Refractive Index: ≈ 1.969 |
||
| − | * [Cauchy Parameters] (350-2000nm): |
||
| − | ** A = 2.000 |
||
| − | ** B = 0.01974 |
||
| − | ** C = 1.2478e-4 |
||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014] |
||
| − | === SiO<sub>x</sub>N<sub>y</sub> deposition (IBD) === |
||
| + | *[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015] |
||
| − | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info. |
||
| + | *[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016] |
||
| − | {| class="wikitable" |
||
| + | *[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017] |
||
| − | ! |
||
| + | *[https://docs.google.com/spreadsheets/d/1OO0ewGSqYSzL3lj8fXkgckTkBGQRliD6sBc02IW7wZY/edit#gid=sharing Nitride2 Data 2018] |
||
| − | |} |
||
| + | *[https://docs.google.com/spreadsheets/d/1Zi8CRspd3LTDdNRRCneE0--bVohWvZbV_kSHo04s0oI/edit#gid=sharing Nitride2 Data 2019] |
||
| − | {| class="wikitable" |
||
| + | *[https://docs.google.com/spreadsheets/d/1LEutQynQXU_9B4EqRt21PX9TGR13IqaMge7sKAXKAfg/edit#gid=sharing Nitride2 Data 2020] |
||
| − | !IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow. |
||
| + | *[https://docs.google.com/spreadsheets/d/1piGMPEHXiUV5WMNfaTFKdL1pnE8W2yrWHkNWHd7Au1A/edit#gid=sharing Nitride2 Data 2021] |
||
| − | ! |
||
| + | |||
| − | |} |
||
| + | =====Uniformity Data===== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014] |
||
| + | *[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015] |
||
| + | *[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1xdzjLODpe2Xb7r4PGil1q-OFqSYKuZBivqLt1T6lezw/edit#gid=sharing Nitride2 Thickness Uniformity 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/19x70-CIyQ41pywpL-IusldLv7XYJps9aJT5-rYYQSCs/edit#gid=sharing Nitride2 Thickness Uniformity 2021] |
||
| + | |||
| + | ==Low-Stress SiN deposition (PECVD #2)== |
||
| + | ''Low-Stress SilIcon Nitride (< 100 MPa)'' |
||
| + | ====Standard Recipe==== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= STD LS Nitride2 Recipe] |
||
| + | *''Old Versions:'' |
||
| + | **[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018] |
||
| + | **[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018] |
||
| + | |||
| + | ====Historical Data==== |
||
| + | =====Thin-Film Properties===== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014] |
||
| + | *[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015] |
||
| + | *[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/1vwpDtiglR2DLWiYNhpBX77cyyj9lw55iVeFz1puN7bM/edit#gid=sharing LS Nitride2 Data 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1zvSl2P5T926Ol48yH3FBCZm1zCeycl3S8GWQYtzi8VI/edit#gid=sharing LS Nitride2 Data 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1muyFsIspqZXB2HXiqG3t39uzeO7A7Srvh4aGdXjwCc4/edit#gid=sharing LS Nitride2 Data 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/1qzVA44esh71655lE1rrpGkKKNTyZRC_mv3IaiZ_HAWQ/edit#gid=sharing LS Nitride2 Data 2021] |
||
| + | |||
| + | =====Uniformity Data===== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014] |
||
| + | *[https://docs.google.com/spreadsheets/d/1LpkaOpr7oNoyvxFkineD7i9FspO6LweJMulvZHJM5Zc/edit#gid=sharing LS Nitride2 Thickness Uniformity 2015] |
||
| + | *[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016] |
||
| + | *[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017] |
||
| + | *[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1M4ug8SAqy2Ky70LNLW3pL2MjSs69beJVhbC2BbabHaU/edit#gid=sharing LS Nitride2 Thickness Uniformity 2020] |
||
| + | *[https://docs.google.com/spreadsheets/d/12wvXFHN7CV_XSFj6hB5Gd7SIXERwzkTM__58ZqzPOuk/edit#gid=sharing LS Nitride2 Thickness Uniformity 2021] |
||
| + | |||
| + | ==Amorphous-Si deposition (PECVD #2)== |
||
| + | |||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress] |
||
| + | |||
| + | ==Cleaning Recipes (PECVD #2)== |
||
| + | ===Cleaning Procedure (PECVD#2)=== |
||
| + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| + | |||
| + | #(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
||
| + | #Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
||
| + | |||
| + | ===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe: "STD CF4/O2 Clean recipe"]=== |
||
| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
| + | ===Clean Times (PECVD#2)=== |
||
{| class="wikitable" |
{| class="wikitable" |
||
| + | !Film Deposited |
||
| − | !Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow. |
||
| + | !Cleaning Time (Dry) |
||
| − | |} |
||
| + | |- |
||
| + | |SiO<sub>2</sub> |
||
| + | |1 min. clean for every 1 min. deposition |
||
| + | |- |
||
| + | |Si<sub>3</sub>N<sub>4</sub> |
||
| + | |1 min. clean for every 7 min of deposition |
||
| + | |- |
||
| + | |If > 29min total dep time |
||
| + | (Season + Dep) |
||
| + | |Wet Clean the Upper Lid/Chamber |
||
| + | DI water then Isopropyl Alcohol on chamber wall & portholes |
||
| + | |}<br /> |
||
| + | =[[ICP-PECVD (Unaxis VLR)]]= |
||
| + | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|'''new procedures''']] to ensure low particle counts in the chamber. |
||
| + | The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
||
| − | === Ta<sub>2</sub>O<sub>5</sub> deposition (IBD) === |
||
| + | ====Historical Particulate Data==== |
||
| + | *[https://docs.google.com/spreadsheets/d/1ZzbpDmkOI3IvGuKqyiQIP44sYJ89E3Zs9sLvjxvWMsc/edit#gid=sharing Particulates in Unaxis films @250C-2019] |
||
| − | ==== Ta2O5 Historical Data (IBD) ==== |
||
| + | *[https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020] |
||
| + | ====Standard Recipes==== |
||
| − | * [[Images/8/85/IBD Ta2O5 deposition details.pdf|Ta<sub>2</sub>O<sub>5</sub> Standard Recipe]] |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Data December 2014 |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity 2014 |
||
| + | *[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Recipe-2020] |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Data December-15 min depositions 2015 |
||
| + | *[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Recipe-2020] |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity-15 min depositions 2015 |
||
| + | *[https://docs.google.com/spreadsheets/d/1UTr93aWx0MjCwVBwRmYjPwo9ASluGQ-OrJhVG_R57aY/edit#gid=sharing SiN 250C Recipe-2020] |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Data December-1hr depositions 2015 |
||
| + | *[https://docs.google.com/spreadsheets/d/1MXW7UNpTyk93ucOVQaSun5IX7QaUbSABNHNznb09qw8/edit#gid=sharing SiN LS 250C Recipe-2020] |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity-1hr depositions 2015 |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Data December-1hr depositions 2016 |
||
| − | * Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity-1hr depositions 2016 |
||
| − | == |
+ | ==SiO2 LDR 250C Deposition (Unaxis VLR)== |
| + | ''Low-Deposition Rate SiO<sub>2</sub>'' |
||
| + | ====Historical Data==== |
||
| + | =====Thin-Film Properties===== |
||
| + | This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| + | *[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019] |
||
| − | * Ta2O5 1hr depositions: |
||
| + | *[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020] |
||
| − | * Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
||
| − | * HF e.r.~2 nm/min |
||
| − | * Stress ≈ -232MPa (compressive) |
||
| − | * Refractive Index: ≈ 2.172 |
||
| − | * [Cauchy Parameters] (350-2000nm): |
||
| − | ** A = 2.1123 |
||
| − | ** B = 0.018901 |
||
| − | ** C = -0.016222 |
||
| + | =====Uniformity Data===== |
||
| − | === TiO<sub>2</sub> deposition (IBD) === |
||
| + | *[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019] |
||
| − | * [[Images/3/3b/New IBD TiO2 deposition.pdf|TiO<sub>2</sub> Standard Recipe]] |
||
| + | *[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020] |
||
| − | * TiO<sub>2</sub> Data December 2014 |
||
| − | * TiO<sub>2</sub> Thickness uniformity 2014 |
||
| + | ==SiO2 HDR 250C Deposition (Unaxis VLR)== |
||
| − | * Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
||
| + | ''High-Deposition Rate SiO<sub>2</sub>'' |
||
| − | * HF etch rate ~5.34nm/min |
||
| + | ====Historical Data==== |
||
| − | * Stress ≈ -445MPa (compressive) |
||
| + | =====Thin-Film Properties===== |
||
| − | * Refractive Index: ≈ 2.259 |
||
| + | This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
| − | * [Cauchy Parameters] (350-2000nm): |
||
| − | ** A = 2.435 |
||
| − | ** B = -4.9045e-4 |
||
| − | ** C = 0.01309 |
||
| − | * Absorbing < ~350nm |
||
| + | *[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019] |
||
| − | === Al<sub>2</sub>O<sub>3</sub> deposition (IBD) === |
||
| + | *[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020] |
||
| + | =====Uniformity Data===== |
||
| − | * Al2O3 standard recipe: 1_Al2O3_dep |
||
| + | *[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019] |
||
| − | * Al2O3 Data 2018 |
||
| + | *[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020] |
||
| − | * Al2O3 Thickness uniformity 2018 |
||
| + | ==SiN 250C deposition (Unaxis VLR)== |
||
| − | * Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
||
| + | ====Historical Data==== |
||
| − | * HF etch rate ~167nm/min |
||
| + | =====Thin-Film Properties===== |
||
| − | * Stress ≈ -332MPa (compressive) |
||
| + | This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| − | * Refractive Index: ≈ 1.656 |
||
| − | * [Cauchy Parameters] (350-2000nm):( working on) |
||
| − | ** A = |
||
| − | ** B = |
||
| − | ** C = |
||
| − | * Absorbing < ~350nm |
||
| + | *[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=sharing SiN 250C 300nm Data-2020] |
||
| − | == Reference Recipes (Disabled Tools) == |
||
| + | =====Uniformity Data===== |
||
| − | === [[Sputter 2 (SFI Endeavor)|<big>Sputter 2 (SFI Endeavor)</big>]] === |
||
| − | '''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.''' |
||
| − | '''Al Deposition (Sputter 2)''' |
||
| + | *[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020] |
||
| − | * [[Images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf|Al Deposition Recipe]] |
||
| − | + | ==SiN LS 250C Deposition (Unaxis VLR)== |
|
| + | ''Low Stress Silicon-Nitride'' |
||
| + | ====Historical Data==== |
||
| + | ''To Be Added'' |
||
| + | =====Thin-Film Properties===== |
||
| + | This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
| + | *[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=sharing SiN LS 250C 300nm Data-2020] |
||
| − | * [[Images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf|AlN<sub>x</sub> Deposition Recipe]] |
||
| + | =====Uniformity Data===== |
||
| − | '''Au Deposition (Sputter 2)''' |
||
| + | *[https://docs.google.com/spreadsheets/d/1NDyxH1i9COM2XTryLqYPE9yOekgRslAJUO7o56iTOEQ/edit#gid=sharing Thickness Uniformity SiN LS 250C 300nm-2020] |
||
| − | * [[Images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf|Au Deposition Recipe]] |
||
| + | ==Cleaning Recipes (Unaxis VLR Dep)== |
||
| − | '''TiO<sub>2</sub> Deposition (Sputter 2)''' |
||
| + | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| + | *SiNx etches at 20nm/min |
||
| − | * [[Images/c/c4/22-TiO2-Film-Sputter-2.pdf|TiO2<sub>2</sub> Deposition Recipe]] |
||
| + | *SiO2 etches at 40nm/min |
||
Latest revision as of 09:31, 14 December 2021
NEW data templates:
Back to Vacuum Deposition Recipes
PECVD 1 (PlasmaTherm 790)
PECVD 1 Plots - SiO2, SiN and Particulate Count
SiO2 deposition (PECVD #1)
- SiO2 [PECVD 1] Standard Recipe
- SiO2 [PECVD 1] Current Process Control Data
- SiO2 [PECVD 1] Historical Data - 2021-10 and earlier
SiN deposition (PECVD #1)
- Si3N4 [PECVD 1] Standard Recipe
- Si3N4 [PECVD 1] Current Process Control Data
- Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
Low Stress Si3N4 (PECVD#1)
- Low Stress Si3N4 [PECVD 1] Standard Recipe
- Low Stress Si3N4 [PECVD 1] Current Process Control Data
- Low Stress Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
SiOxNy deposition (PECVD #1)
Standard Cleaning Procedure (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
PECVD 2 Plots
SiO2 deposition (PECVD #2)
SiO2 [PECVD 2] Standard Recipe
SiO2 [PECVD 2] Historical Data
SiN deposition (PECVD #2)
Standard Recipe
Si3N4 [PECVD 2] Standard Recipe
Present Data
Historical Data
Si3N4 [PECVD 2] Historical Data
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride, Si3N4 (< 100 MPa)
- Low Stress Si3N4 [PECVD 2] Standard Recipe
- Low Stress Si3N4 [PECVD 2] Present Data
- Low Stress Si3N4 [PECVD 2] Historical Data
Amorphous-Si deposition (PECVD #2)
Standard Cleaning Procedure (PECVD #2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
ICP-PECVD Plots
Low Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe
Present Data
Low Deposition Rate SiO2 [ICP-PECVD] Present Data
Historical Data
Low Deposition Rate SiO2 [ICP-PECVD] Historical Data
High Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe
Present Data
High Deposition Rate SiO2 [ICP-PECVD] Present Data
Historical Data
High Deposition Rate SiO2 [ICP-PECVD] Historical Data
Si3N4 [ICP-PECVD]
Standard Recipe
Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Si3N4 [ICP-PECVD] Present Data
Historical Data
Si3N4 [ICP-PECVD] Historical Data
Low Stress Si3N4 [ICP-PECVD]
Standard Recipe
Low Stress Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Low Stress Si3N4 [ICP-PECVD] Present Data
Historical Data
Low Stress Si3N4 [ICP-PECVD] Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
Ion Beam Deposition (Veeco NEXUS)
IBD Plots
SiO2 [IBD]
Standard Recipe
SiO2 [IBD] Standard Recipe
Present Data
Historical Data
Si3N4 [IBD]
Standard Recipe
Si3N4 [IBD] Standard Recipe
Present Data
Historical Data
Ta2O5 [IBD]
Standard Recipe
Ta2O5 [IBD] Standard Recipe
Present Data
Historical Data
Al2O3 [IBD]
Standard Recipe
Al2O3 [IBD] Standard Recipe
Present Data
Historical Data
TiO2 [IBD]
Standard Recipe
TiO2 [IBD] Standard Recipe
Present Data
Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
OLD Data
Copied on 2021-12-14
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
Historical Particulate Data
- Particulates(Gain4) in PECVD#1-OLD DATA 2015
- Particulates(Gain4) in PECVD#1-OLD DATA 2016
- Particulates(Gain4) in PECVD#1-OLD DATA 2017
- Particulates in PECVD#1 films 2017
- Particulates in PECVD#1 films 2018
- Particulates in PECVD#1 films 2019
- Particulates in PECVD#1 films 2020
- Particulates in PECVD#1 films 2021
SiN deposition (PECVD #1)
Historical Data
Thin-Film Properties
- SiN 100nm Data 2014
- SiN 100nm Data 2015
- SiN 100nm Data 2016
- SiN 100nm Data 2017
- SiN 300nm Data 2017
- SiN 300nm Data 2018
- SiN 300nm Data 2019
- SiN 300nm Data 2020
- SiN 300nm Data 2021
Uniformity Data
- SiN 100 nm Thickness uniformity 2014
- SiN 100 nm Thickness uniformity 2015
- SiN 100 nm Thickness uniformity 2016
- SiN 100 nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2018
- SiN 300nm Thickness uniformity 2019
- SiN 300nm Thickness uniformity 2020
- SiN 300nm Thickness uniformity 2021
SiO2 deposition (PECVD #1)
Historical Data
Thin-Film Properties
- SiO2 100nm Data 2014
- SiO2 100nm Data 2015
- SiO2 100nm Data 2016
- SiO2 100nm Data 2017
- SiO2 300nm Data 2017
- SiO2 300nm Data 2018
- SiO2 300nm Data 2019
- SiO2 300nm Data 2020
- SiO2 300nm Data 2021
Thick-Film Properties
Uniformity Data
- SiO2 100nm Thickness uniformity 2014
- SiO2 100 nm Thickness uniformity 2015
- SiO2 100 nmThickness uniformity 2016
- SiO2 100nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2018
- SiO2 300nm Thickness uniformity 2019
- SiO2 300nm Thickness uniformity 2020
- SiO2 300nm Thickness uniformity 2021
Low-Stress SiN - LS-SiN (PECVD#1)
SiOxNy deposition (PECVD #1)
Cleaning Recipes (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Cleaning Recipe: "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
Historical Particulate Data
- Particulates (Gain4) in PECVD#2 2015
- Particulates (Gain4) in PECVD#2 2016
- Particulates (Gain4) in PECVD#2 2017
- Particulates in PECVD#2 films 2017
- Particulates in PECVD#2 films 2018
- Particulates in PECVD#2 films 2019
- Particulates in PECVD#2 films 2020
- Particulates in PECVD#2 films 2021
SiO2 deposition (PECVD #2)
Standard Recipe
Historical Data
Thin-Film Properties
- Oxide Data 2014
- Oxide Data 2015
- Oxide data 2016
- Oxide Data 2017
- Oxide Data 2018
- Oxide Data 2019
- Oxide Data 2020
- Oxide Data 2021
Thin-Film Properties
Uniformity Data
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
- Oxide Thickness Uniformity 2016
- Oxide Thickness Uniformity 2017
- Oxide Thickness Uniformity 2018
- Oxide Thickness Uniformity 2019
- Oxide Thickness Uniformity 2020
- Oxide Thickness Uniformity 2021
SiN deposition (PECVD #2)
Standard Recipe
Historical Data
Thin-Film Properties
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Data 2016
- Nitride2 Data 2017
- Nitride2 Data 2018
- Nitride2 Data 2019
- Nitride2 Data 2020
- Nitride2 Data 2021
Uniformity Data
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
- Nitride2 Thickness Uniformity 2016
- Nitride2 Thickness Uniformity 2017
- Nitride2 Thickness Uniformity 2018
- Nitride2 Thickness Uniformity 2019
- Nitride2 Thickness Uniformity 2020
- Nitride2 Thickness Uniformity 2021
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride (< 100 MPa)
Standard Recipe
- STD LS Nitride2 Recipe
- Old Versions:
Historical Data
Thin-Film Properties
- LS Nitride2 Data 2014
- LS Nitride2 Data 2015
- LS Nitride2 Data 2016
- LS Nitride2 Data 2017
- LS Nitride2 Data 2018
- LS Nitride2 Data 2019
- LS Nitride2 Data 2020
- LS Nitride2 Data 2021
Uniformity Data
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
- LS Nitride2 Thickness Uniformity 2016
- LS Nitride2 Thickness Uniformity 2017
- LS Nitride2 Thickness Uniformity 2018
- LS Nitride2 Thickness Uniformity 2019
- LS Nitride2 Thickness Uniformity 2020
- LS Nitride2 Thickness Uniformity 2021
Amorphous-Si deposition (PECVD #2)
Cleaning Recipes (PECVD #2)
Cleaning Procedure (PECVD#2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe: "STD CF4/O2 Clean recipe"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
Historical Particulate Data
Standard Recipes
SiO2 LDR 250C Deposition (Unaxis VLR)
Low-Deposition Rate SiO2
Historical Data
Thin-Film Properties
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure here.
Uniformity Data
SiO2 HDR 250C Deposition (Unaxis VLR)
High-Deposition Rate SiO2
Historical Data
Thin-Film Properties
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure here.
Uniformity Data
SiN 250C deposition (Unaxis VLR)
Historical Data
Thin-Film Properties
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure here.
Uniformity Data
SiN LS 250C Deposition (Unaxis VLR)
Low Stress Silicon-Nitride
Historical Data
To Be Added
Thin-Film Properties
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure here.
Uniformity Data
Cleaning Recipes (Unaxis VLR Dep)
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min