Difference between revisions of "Old Deposition Data - NastaziaM 2021-11-22"
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+ | =NEW data templates:= |
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− | Testing |
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+ | |||
+ | |||
+ | <big>Back to [[Vacuum Deposition Recipes]]</big> |
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+ | |||
+ | =[[PECVD 1 (PlasmaTherm 790)]]= |
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+ | |||
+ | ===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots] - SiO2, SiN and Particulate Count=== |
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+ | |||
+ | ==SiO<sub>2</sub> deposition (PECVD #1)== |
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+ | |||
+ | * SiO<sub>2</sub> [PECVD 1] Standard Recipe |
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+ | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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+ | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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+ | |||
+ | ==SiN deposition (PECVD #1)== |
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+ | |||
+ | * Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
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+ | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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+ | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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+ | |||
+ | ==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)== |
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+ | |||
+ | * Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Standard Recipe |
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+ | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1515630363 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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+ | * [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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+ | |||
+ | ==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
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+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
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+ | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] |
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+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
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+ | |||
+ | ==Standard Cleaning Procedure (PECVD #1)== |
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+ | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
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+ | |||
+ | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
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+ | #Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
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+ | |||
+ | ===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]=== |
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+ | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it. |
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+ | |||
+ | =[[PECVD 2 (Advanced Vacuum)]]= |
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+ | |||
+ | ===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Plots]=== |
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+ | |||
+ | ==SiO<sub>2</sub> deposition (PECVD #2)== |
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+ | SiO<sub>2</sub> [PECVD 2] Standard Recipe |
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+ | |||
+ | [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Present Data</nowiki>] |
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+ | |||
+ | [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] |
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+ | ==SiN deposition (PECVD #2)== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] |
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+ | |||
+ | ==Low-Stress SiN deposition (PECVD #2)== |
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+ | ''Low-Stress SilIcon Nitride, Si<sub>3</sub>N<sub>4</sub> (< 100 MPa)'' |
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+ | |||
+ | * Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Standard Recipe |
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+ | * [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Present Data</nowiki>] |
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+ | * [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=268003895 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] |
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+ | |||
+ | ==Amorphous-Si deposition (PECVD #2)== |
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+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
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+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress] |
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+ | |||
+ | ==Standard Cleaning Procedure (PECVD #2)== |
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+ | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
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+ | |||
+ | #(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
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+ | #Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
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+ | |||
+ | ===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]=== |
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+ | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it. |
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+ | |||
+ | |||
+ | '''Clean Times (PECVD#2''') |
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+ | {| class="wikitable" |
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+ | !Film Deposited |
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+ | !Cleaning Time (Dry) |
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+ | |- |
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+ | |SiO<sub>2</sub> |
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+ | |1 min. clean for every 1 min. deposition |
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+ | |- |
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+ | |Si<sub>3</sub>N<sub>4</sub> |
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+ | |1 min. clean for every 7 min of deposition |
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+ | |- |
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+ | |If > 29min total dep time |
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+ | (Season + Dep) |
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+ | |Wet Clean the Upper Lid/Chamber |
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+ | DI water then Isopropyl Alcohol on chamber wall & portholes |
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+ | |} |
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+ | |||
+ | =[[ICP-PECVD (Unaxis VLR)]]= |
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+ | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber. |
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+ | |||
+ | The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
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+ | |||
+ | ===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Plots]=== |
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+ | |||
+ | ==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
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+ | |||
+ | ==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | High Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
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+ | ==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
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+ | |||
+ | ==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>] |
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+ | ==Standard Cleaning Procedure [ICP-PECVD]== |
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+ | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
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+ | |||
+ | *SiNx etches at 20nm/min |
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+ | *SiO<sub>2</sub> etches at 40nm/min |
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+ | |||
+ | ===Standard Clean Recipe=== |
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+ | =[[Ion Beam Deposition (Veeco NEXUS)]]= |
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+ | |||
+ | ===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Plots]=== |
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+ | |||
+ | ==SiO<sub>2</sub> [IBD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | SiO<sub>2</sub> [IBD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=700537698 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] |
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+ | |||
+ | ==Si<sub>3</sub>N<sub>4</sub> [IBD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | Si<sub>3</sub>N<sub>4</sub> [IBD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2093120876 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Historical Data</nowiki>] |
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+ | ==Ta<sub>2</sub>O<sub>5</sub> [IBD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | Ta<sub>2</sub>O<sub>5</sub> [IBD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1075234846 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] |
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+ | ==Al<sub>2</sub>O<sub>3</sub> [IBD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1294329492 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Historical Data</nowiki>] |
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+ | ==TiO<sub>2</sub> [IBD]== |
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+ | |||
+ | ===Standard Recipe=== |
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+ | TiO<sub>2</sub> [IBD] Standard Recipe |
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+ | |||
+ | ===Present Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Present Data</nowiki>] |
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+ | |||
+ | ===Historical Data=== |
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+ | [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1327808550 TiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] |
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+ | ==Standard Cleaning Procedure [ICP-PECVD]== |
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+ | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
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+ | |||
+ | *SiNx etches at 20nm/min |
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+ | *SiO<sub>2</sub> etches at 40nm/min |
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+ | |||
+ | ===Standard Clean Recipe=== |
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+ | |||
+ | |||
+ | |||
+ | <br /> |
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+ | |||
+ | =OLD Data= |
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+ | Copied on 2021-12-14 |
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+ | |||
+ | |||
+ | |||
+ | {{recipes|Vacuum Deposition}} |
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+ | |||
+ | =[[PECVD 1 (PlasmaTherm 790)]]= |
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+ | ====Historical Particulate Data==== |
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+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2015] |
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+ | *[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2016] |
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+ | *[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates(Gain4) in PECVD#1-OLD DATA 2017] |
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+ | *[https://docs.google.com/spreadsheets/d/1VN551M2oXGWX306HDLQXvZIp3kgxEvWffQqMqnc8ISk/edit#gid=sharing Particulates in PECVD#1 films 2017] |
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+ | *[https://docs.google.com/spreadsheets/d/11c0gQHnattIjVO95aBqiL-zL4DInRFihV-YB54xLT40/edit#gid=sharing Particulates in PECVD#1 films 2018] |
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+ | *[https://docs.google.com/spreadsheets/d/1ct-SSCRxf81W0jupCWzh81n0DBwPv6mwKFMzuWu_0TI/edit#gid=sharing Particulates in PECVD#1 films 2019] |
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+ | *[https://docs.google.com/spreadsheets/d/1yks0OgH8rpbYjin_Qr8vpPg8jBiZQRs_PKfyfo-Rqg0/edit#gid=sharing Particulates in PECVD#1 films 2020] |
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+ | *[https://docs.google.com/spreadsheets/d/1vSmymaS_NNXW-ouC8Ky1J6iVSla7uyRB2zf1lGMa31g/edit#gid=sharing Particulates in PECVD#1 films 2021] |
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+ | |||
+ | ==SiN deposition (PECVD #1)== |
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+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4 Standard Recipe] |
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+ | |||
+ | ====Historical Data==== |
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+ | =====Thin-Film Properties===== |
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+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014] |
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+ | *[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN 100nm Data 2015] |
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+ | *[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN 100nm Data 2016] |
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+ | *[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN 100nm Data 2017] |
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+ | *[https://docs.google.com/spreadsheets/d/1UlyvPcXUBQ5R2JwjKOjELvtCJaTElVhJHfzgjyaRd2A/edit#gid=sharing SiN 300nm Data 2017] |
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+ | *[https://docs.google.com/spreadsheets/d/1pAoTCaNSf0uZMyiQ2qKFd0s_e4e53P9Z1jUwtmTnlLk/edit#gid=sharing SiN 300nm Data 2018] |
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+ | *[https://docs.google.com/spreadsheets/d/1Pnw8eEaQ0rGblRYl6LeIm6wrh1hgeyjnHEbA4BzV8JM/edit#gid=sharing SiN 300nm Data 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1N_1Kk6J-wA4nlHpFg5EMDZNHR1kLDo_fr_Dvc6osSr4/edit#gid=sharing SiN 300nm Data 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/13jY5T_PW1a3GjHIbR0GuUbIhmxClQfvLgzaUtl3YniE/edit#gid=sharing SiN 300nm Data 2021] |
||
+ | |||
+ | =====Uniformity Data===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 100 nm Thickness uniformity 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 100 nm Thickness uniformity 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 100 nm Thickness uniformity 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1Z83RCH5cAUfViO6vv6hAatcLVWZ95ex4nDdfffm9I7s/edit#gid=sharing SiN 300nm Thickness uniformity 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1b4EQZdRtVbqNwGBrItoG5-tz6RIzlsvBiCFR6ZXfylw/edit#gid=sharing SiN 300nm Thickness uniformity 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1-OiaH8frAzJzHKfbYTJP808ddzk1Wsv_CixDzG-sSfo/edit#gid=sharing SiN 300nm Thickness uniformity 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1e5ycwODa-VooEzGjhY4XquvJpuAuIQHHHZSRwZaH5-E/edit#gid=sharing SiN 300nm Thickness uniformity 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1Re5xwB5WMgsgDHsi_0dUeL62uWAnqDQtoBoaR7lj8cI/edit#gid=sharing SiN 300nm Thickness uniformity 2021] |
||
+ | |||
+ | ==SiO<sub>2</sub> deposition (PECVD #1)== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1uqpg3sirsRbXdTFlxZ6_k3t0ovP0MtpFtICjpH0-prs/edit#gid= SiO2 Standard Recipe] |
||
+ | |||
+ | ====Historical Data==== |
||
+ | =====Thin-Film Properties===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1QbhukSuVNueT067IVEpweSlD4B7GQecf-tfQFQeV6Xs/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1OwyhfFPDH-XLPczA8cKoBPnujq9oNukaWkHq0KoFS40/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1I-0Ih_F9pWeOwXeEQC6IFYKNB6bBLSoBiyX8Eu3pwFg/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2021] |
||
+ | |||
+ | =====Thick-Film Properties===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1XgUlCaCv3jCK9RyrI553PkIS0PmiAlbWjsDwK5TOH3I/edit#gid=sharing SiO<sub>2</sub> Thick film Data 2021] |
||
+ | |||
+ | ====Uniformity Data==== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 100 nm Thickness uniformity 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 100 nmThickness uniformity 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1Fa8mZIBIeJwvCwUbJ-28VcvVYj8rshhuDuXsYxA-cD8/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1YB_9USpuXGpIdSW2gNsptu5nSrLWAGsYu0SWoYEy0aQ/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1FatUAEegWuDRzVa47L1_cqgRs0AZ_Fao9jpwz5sfln0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1uAIEv_z2TJtY2XxTYnDIyKwKT4ZIhalTCyZ5SrDRJmA/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1jThamYtEiH3lVz4IzoG9ILxBG8-TufIKnUd8V0qKQU0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2021] |
||
+ | |||
+ | ==Low-Stress SiN - LS-SiN (PECVD#1)== |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe] |
||
+ | *[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014] |
||
+ | |||
+ | ==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
||
+ | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] |
||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
||
+ | |||
+ | ==Cleaning Recipes (PECVD #1)== |
||
+ | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
+ | |||
+ | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
||
+ | #Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
||
+ | |||
+ | ===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe: "CF4/O2 Clean"]=== |
||
+ | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
+ | =[[PECVD 2 (Advanced Vacuum)]]= |
||
+ | ====Historical Particulate Data==== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017] |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates in PECVD#2 films 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1aU6fTyQ5MlGD4uCa9gepG5rLJzW3wlkOWSKEl_w_Ye4/edit#gid=sharing Particulates in PECVD#2 films 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1OPZXe8g3H0wywIrPFel3nSZ5iyPs2mVIYUSVKfTtMDg/edit#gid=sharing Particulates in PECVD#2 films 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1Y9lomsf7bDojeXoAsEG7xvypx_sw_atpmPwB9xtK1Zk/edit#gid=sharing Particulates in PECVD#2 films 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1BauS7q_sGKkaeY6o3BOw2wyQsyS_DukJxCAbGantDW4/edit#gid=sharing Particulates in PECVD#2 films 2021] |
||
+ | |||
+ | ==SiO<sub>2</sub> deposition (PECVD #2)== |
||
+ | ====Standard Recipe==== |
||
+ | <br /> |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= STD SiO2 Recipe] |
||
+ | |||
+ | ====Historical Data==== |
||
+ | =====Thin-Film Properties===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/1d5boeJRWWgMqvQe6nVM7m8s3KAcS4Yp2L5CEU9svkX4/edit#gid=sharing Oxide Data 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1VI-sUmaqois0NsCvf2kQmPfRRa03MjBzl779hmmLtP4/edit#gid=sharing Oxide Data 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1oWnQ3D6oknKWU2bohvSrN85rlEZgQN3YP_ZJ4i8u7do/edit#gid=sharing Oxide Data 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Data 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/10XA3WnHjUZOLFunwUIlM2IqaRIiX_EGb6Jj_bw84gkI/edit#gid=sharing Oxide Data 2021] |
||
+ | |||
+ | =====Thin-Film Properties===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/19Z8IAVgumWuH0t8RN23LJ2wWZP7jYYLwRl9pDQP4obI/edit#gid=sharing Thick Oxide Data 2021] |
||
+ | |||
+ | =====Uniformity Data===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1Z9UMgaQC2PiLLrMk04mpKWkJLa1L_WFMAm5079eKxI0/edit#gid=sharing Oxide Thickness Uniformity 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1b9Fmzp_d-XiMerFtrDiCsmS7NMNoaBtS8T0DLqoii8Y/edit#gid=sharing Oxide Thickness Uniformity 2021] |
||
+ | |||
+ | ==SiN deposition (PECVD #2)== |
||
+ | ====Standard Recipe==== |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate] |
||
+ | *[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= STD Nitride2 Recipe] |
||
+ | |||
+ | ====Historical Data==== |
||
+ | =====Thin-Film Properties===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1OO0ewGSqYSzL3lj8fXkgckTkBGQRliD6sBc02IW7wZY/edit#gid=sharing Nitride2 Data 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1Zi8CRspd3LTDdNRRCneE0--bVohWvZbV_kSHo04s0oI/edit#gid=sharing Nitride2 Data 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1LEutQynQXU_9B4EqRt21PX9TGR13IqaMge7sKAXKAfg/edit#gid=sharing Nitride2 Data 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1piGMPEHXiUV5WMNfaTFKdL1pnE8W2yrWHkNWHd7Au1A/edit#gid=sharing Nitride2 Data 2021] |
||
+ | |||
+ | =====Uniformity Data===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1xdzjLODpe2Xb7r4PGil1q-OFqSYKuZBivqLt1T6lezw/edit#gid=sharing Nitride2 Thickness Uniformity 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/19x70-CIyQ41pywpL-IusldLv7XYJps9aJT5-rYYQSCs/edit#gid=sharing Nitride2 Thickness Uniformity 2021] |
||
+ | |||
+ | ==Low-Stress SiN deposition (PECVD #2)== |
||
+ | ''Low-Stress SilIcon Nitride (< 100 MPa)'' |
||
+ | ====Standard Recipe==== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= STD LS Nitride2 Recipe] |
||
+ | *''Old Versions:'' |
||
+ | **[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018] |
||
+ | **[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018] |
||
+ | |||
+ | ====Historical Data==== |
||
+ | =====Thin-Film Properties===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/1vwpDtiglR2DLWiYNhpBX77cyyj9lw55iVeFz1puN7bM/edit#gid=sharing LS Nitride2 Data 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/1zvSl2P5T926Ol48yH3FBCZm1zCeycl3S8GWQYtzi8VI/edit#gid=sharing LS Nitride2 Data 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1muyFsIspqZXB2HXiqG3t39uzeO7A7Srvh4aGdXjwCc4/edit#gid=sharing LS Nitride2 Data 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1qzVA44esh71655lE1rrpGkKKNTyZRC_mv3IaiZ_HAWQ/edit#gid=sharing LS Nitride2 Data 2021] |
||
+ | |||
+ | =====Uniformity Data===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014] |
||
+ | *[https://docs.google.com/spreadsheets/d/1LpkaOpr7oNoyvxFkineD7i9FspO6LweJMulvZHJM5Zc/edit#gid=sharing LS Nitride2 Thickness Uniformity 2015] |
||
+ | *[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016] |
||
+ | *[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017] |
||
+ | *[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2018] |
||
+ | *[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1M4ug8SAqy2Ky70LNLW3pL2MjSs69beJVhbC2BbabHaU/edit#gid=sharing LS Nitride2 Thickness Uniformity 2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/12wvXFHN7CV_XSFj6hB5Gd7SIXERwzkTM__58ZqzPOuk/edit#gid=sharing LS Nitride2 Thickness Uniformity 2021] |
||
+ | |||
+ | ==Amorphous-Si deposition (PECVD #2)== |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress] |
||
+ | |||
+ | ==Cleaning Recipes (PECVD #2)== |
||
+ | ===Cleaning Procedure (PECVD#2)=== |
||
+ | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
+ | |||
+ | #(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
||
+ | #Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
||
+ | |||
+ | ===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe: "STD CF4/O2 Clean recipe"]=== |
||
+ | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it. |
||
+ | ===Clean Times (PECVD#2)=== |
||
+ | {| class="wikitable" |
||
+ | !Film Deposited |
||
+ | !Cleaning Time (Dry) |
||
+ | |- |
||
+ | |SiO<sub>2</sub> |
||
+ | |1 min. clean for every 1 min. deposition |
||
+ | |- |
||
+ | |Si<sub>3</sub>N<sub>4</sub> |
||
+ | |1 min. clean for every 7 min of deposition |
||
+ | |- |
||
+ | |If > 29min total dep time |
||
+ | (Season + Dep) |
||
+ | |Wet Clean the Upper Lid/Chamber |
||
+ | DI water then Isopropyl Alcohol on chamber wall & portholes |
||
+ | |}<br /> |
||
+ | =[[ICP-PECVD (Unaxis VLR)]]= |
||
+ | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|'''new procedures''']] to ensure low particle counts in the chamber. |
||
+ | |||
+ | The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. |
||
+ | ====Historical Particulate Data==== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1ZzbpDmkOI3IvGuKqyiQIP44sYJ89E3Zs9sLvjxvWMsc/edit#gid=sharing Particulates in Unaxis films @250C-2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1fMebt-6BfAurcjMv1aDsmm6VgPqokU73_2ReZFqzEEk/edit#gid=sharing Particulates in Unaxis films @250C-2020] |
||
+ | |||
+ | ====Standard Recipes==== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1T_4gaJQ3wHSNptoAtFR1fN0ePwfw3PsQ0DLSjqGeyM4/edit#gid=sharing SiO2 LDR 250C Recipe-2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1nsdGPpfyZfIesyYG1PIU9uYyuzQWrfpsvVWM6J_H6BI/edit#gid=sharing SiO2 HDR 250C Recipe-2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1UTr93aWx0MjCwVBwRmYjPwo9ASluGQ-OrJhVG_R57aY/edit#gid=sharing SiN 250C Recipe-2020] |
||
+ | *[https://docs.google.com/spreadsheets/d/1MXW7UNpTyk93ucOVQaSun5IX7QaUbSABNHNznb09qw8/edit#gid=sharing SiN LS 250C Recipe-2020] |
||
+ | |||
+ | ==SiO2 LDR 250C Deposition (Unaxis VLR)== |
||
+ | ''Low-Deposition Rate SiO<sub>2</sub>'' |
||
+ | ====Historical Data==== |
||
+ | =====Thin-Film Properties===== |
||
+ | This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1bU2Gu3x3DNyrq8skMAQZJCsra-IcoDCT0U5D135YPgc/edit#gid=sharing SiO2 LDR 250C 300nm Data-2020] |
||
+ | |||
+ | =====Uniformity Data===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1Xi21OrargcNRthZ2fM_56APB8O599ctDfq5E_6B5Ft0/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1-ytu5R75FAXNfhJZTRuK2eRZyu_L6Hy1BWV2zN6_tRA/edit#gid=sharing Thickness Uniformity SiO2 LDR 250C 300nm-2020] |
||
+ | |||
+ | ==SiO2 HDR 250C Deposition (Unaxis VLR)== |
||
+ | ''High-Deposition Rate SiO<sub>2</sub>'' |
||
+ | ====Historical Data==== |
||
+ | =====Thin-Film Properties===== |
||
+ | This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]]. |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/16s-tUna9xrkKneK1lE-qSPuUHWlDmP6Qu3IngBXP3R8/edit#gid=sharing SiO2 HDR 250C 300nm Data-2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=sharing SiO2 HDR 250C 300nm Data-2020] |
||
+ | |||
+ | =====Uniformity Data===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1Mm_rsTm9xDQ50kZx6X6EZ5dTegUvinq0zFxRtE8B2R4/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2019] |
||
+ | *[https://docs.google.com/spreadsheets/d/1nzVeCKsmgL17zft6axQlixpvsEowJOG7qCnLQm_0XxE/edit#gid=sharing Thickness Uniformity SiO2 HDR 250C 300nm-2020] |
||
+ | |||
+ | ==SiN 250C deposition (Unaxis VLR)== |
||
+ | ====Historical Data==== |
||
+ | =====Thin-Film Properties===== |
||
+ | This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=sharing SiN 250C 300nm Data-2020] |
||
+ | |||
+ | =====Uniformity Data===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1YAx_Ix84xId8CAhDwZeFT7jLFUwg-BET9aBwg3DxUmQ/edit#gid=sharing Thickness Uniformity SiN 250C 300nm-2020] |
||
+ | |||
+ | ==SiN LS 250C Deposition (Unaxis VLR)== |
||
+ | ''Low Stress Silicon-Nitride'' |
||
+ | ====Historical Data==== |
||
+ | ''To Be Added'' |
||
+ | =====Thin-Film Properties===== |
||
+ | This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]]. |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=sharing SiN LS 250C 300nm Data-2020] |
||
+ | |||
+ | =====Uniformity Data===== |
||
+ | |||
+ | *[https://docs.google.com/spreadsheets/d/1NDyxH1i9COM2XTryLqYPE9yOekgRslAJUO7o56iTOEQ/edit#gid=sharing Thickness Uniformity SiN LS 250C 300nm-2020] |
||
+ | |||
+ | ==Cleaning Recipes (Unaxis VLR Dep)== |
||
+ | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
+ | |||
+ | *SiNx etches at 20nm/min |
||
+ | *SiO2 etches at 40nm/min |
Latest revision as of 09:31, 14 December 2021
NEW data templates:
Back to Vacuum Deposition Recipes
PECVD 1 (PlasmaTherm 790)
PECVD 1 Plots - SiO2, SiN and Particulate Count
SiO2 deposition (PECVD #1)
- SiO2 [PECVD 1] Standard Recipe
- SiO2 [PECVD 1] Current Process Control Data
- SiO2 [PECVD 1] Historical Data - 2021-10 and earlier
SiN deposition (PECVD #1)
- Si3N4 [PECVD 1] Standard Recipe
- Si3N4 [PECVD 1] Current Process Control Data
- Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
Low Stress Si3N4 (PECVD#1)
- Low Stress Si3N4 [PECVD 1] Standard Recipe
- Low Stress Si3N4 [PECVD 1] Current Process Control Data
- Low Stress Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
SiOxNy deposition (PECVD #1)
Standard Cleaning Procedure (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
PECVD 2 Plots
SiO2 deposition (PECVD #2)
SiO2 [PECVD 2] Standard Recipe
SiO2 [PECVD 2] Historical Data
SiN deposition (PECVD #2)
Standard Recipe
Si3N4 [PECVD 2] Standard Recipe
Present Data
Historical Data
Si3N4 [PECVD 2] Historical Data
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride, Si3N4 (< 100 MPa)
- Low Stress Si3N4 [PECVD 2] Standard Recipe
- Low Stress Si3N4 [PECVD 2] Present Data
- Low Stress Si3N4 [PECVD 2] Historical Data
Amorphous-Si deposition (PECVD #2)
Standard Cleaning Procedure (PECVD #2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
Film Deposited | Cleaning Time (Dry) |
---|---|
SiO2 | 1 min. clean for every 1 min. deposition |
Si3N4 | 1 min. clean for every 7 min of deposition |
If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
ICP-PECVD Plots
Low Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe
Present Data
Low Deposition Rate SiO2 [ICP-PECVD] Present Data
Historical Data
Low Deposition Rate SiO2 [ICP-PECVD] Historical Data
High Deposition Rate SiO2 [ICP-PECVD]
Standard Recipe
High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe
Present Data
High Deposition Rate SiO2 [ICP-PECVD] Present Data
Historical Data
High Deposition Rate SiO2 [ICP-PECVD] Historical Data
Si3N4 [ICP-PECVD]
Standard Recipe
Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Si3N4 [ICP-PECVD] Present Data
Historical Data
Si3N4 [ICP-PECVD] Historical Data
Low Stress Si3N4 [ICP-PECVD]
Standard Recipe
Low Stress Si3N4 [ICP-PECVD] Standard Recipe
Present Data
Low Stress Si3N4 [ICP-PECVD] Present Data
Historical Data
Low Stress Si3N4 [ICP-PECVD] Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
Ion Beam Deposition (Veeco NEXUS)
IBD Plots
SiO2 [IBD]
Standard Recipe
SiO2 [IBD] Standard Recipe
Present Data
Historical Data
Si3N4 [IBD]
Standard Recipe
Si3N4 [IBD] Standard Recipe
Present Data
Historical Data
Ta2O5 [IBD]
Standard Recipe
Ta2O5 [IBD] Standard Recipe
Present Data
Historical Data
Al2O3 [IBD]
Standard Recipe
Al2O3 [IBD] Standard Recipe
Present Data
Historical Data
TiO2 [IBD]
Standard Recipe
TiO2 [IBD] Standard Recipe
Present Data
Historical Data
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
OLD Data
Copied on 2021-12-14
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
Historical Particulate Data
- Particulates(Gain4) in PECVD#1-OLD DATA 2015
- Particulates(Gain4) in PECVD#1-OLD DATA 2016
- Particulates(Gain4) in PECVD#1-OLD DATA 2017
- Particulates in PECVD#1 films 2017
- Particulates in PECVD#1 films 2018
- Particulates in PECVD#1 films 2019
- Particulates in PECVD#1 films 2020
- Particulates in PECVD#1 films 2021
SiN deposition (PECVD #1)
Historical Data
Thin-Film Properties
- SiN 100nm Data 2014
- SiN 100nm Data 2015
- SiN 100nm Data 2016
- SiN 100nm Data 2017
- SiN 300nm Data 2017
- SiN 300nm Data 2018
- SiN 300nm Data 2019
- SiN 300nm Data 2020
- SiN 300nm Data 2021
Uniformity Data
- SiN 100 nm Thickness uniformity 2014
- SiN 100 nm Thickness uniformity 2015
- SiN 100 nm Thickness uniformity 2016
- SiN 100 nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2018
- SiN 300nm Thickness uniformity 2019
- SiN 300nm Thickness uniformity 2020
- SiN 300nm Thickness uniformity 2021
SiO2 deposition (PECVD #1)
Historical Data
Thin-Film Properties
- SiO2 100nm Data 2014
- SiO2 100nm Data 2015
- SiO2 100nm Data 2016
- SiO2 100nm Data 2017
- SiO2 300nm Data 2017
- SiO2 300nm Data 2018
- SiO2 300nm Data 2019
- SiO2 300nm Data 2020
- SiO2 300nm Data 2021
Thick-Film Properties
Uniformity Data
- SiO2 100nm Thickness uniformity 2014
- SiO2 100 nm Thickness uniformity 2015
- SiO2 100 nmThickness uniformity 2016
- SiO2 100nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2018
- SiO2 300nm Thickness uniformity 2019
- SiO2 300nm Thickness uniformity 2020
- SiO2 300nm Thickness uniformity 2021
Low-Stress SiN - LS-SiN (PECVD#1)
SiOxNy deposition (PECVD #1)
Cleaning Recipes (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
Standard Cleaning Recipe: "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
Historical Particulate Data
- Particulates (Gain4) in PECVD#2 2015
- Particulates (Gain4) in PECVD#2 2016
- Particulates (Gain4) in PECVD#2 2017
- Particulates in PECVD#2 films 2017
- Particulates in PECVD#2 films 2018
- Particulates in PECVD#2 films 2019
- Particulates in PECVD#2 films 2020
- Particulates in PECVD#2 films 2021
SiO2 deposition (PECVD #2)
Standard Recipe
Historical Data
Thin-Film Properties
- Oxide Data 2014
- Oxide Data 2015
- Oxide data 2016
- Oxide Data 2017
- Oxide Data 2018
- Oxide Data 2019
- Oxide Data 2020
- Oxide Data 2021
Thin-Film Properties
Uniformity Data
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
- Oxide Thickness Uniformity 2016
- Oxide Thickness Uniformity 2017
- Oxide Thickness Uniformity 2018
- Oxide Thickness Uniformity 2019
- Oxide Thickness Uniformity 2020
- Oxide Thickness Uniformity 2021
SiN deposition (PECVD #2)
Standard Recipe
Historical Data
Thin-Film Properties
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Data 2016
- Nitride2 Data 2017
- Nitride2 Data 2018
- Nitride2 Data 2019
- Nitride2 Data 2020
- Nitride2 Data 2021
Uniformity Data
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
- Nitride2 Thickness Uniformity 2016
- Nitride2 Thickness Uniformity 2017
- Nitride2 Thickness Uniformity 2018
- Nitride2 Thickness Uniformity 2019
- Nitride2 Thickness Uniformity 2020
- Nitride2 Thickness Uniformity 2021
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride (< 100 MPa)
Standard Recipe
- STD LS Nitride2 Recipe
- Old Versions:
Historical Data
Thin-Film Properties
- LS Nitride2 Data 2014
- LS Nitride2 Data 2015
- LS Nitride2 Data 2016
- LS Nitride2 Data 2017
- LS Nitride2 Data 2018
- LS Nitride2 Data 2019
- LS Nitride2 Data 2020
- LS Nitride2 Data 2021
Uniformity Data
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
- LS Nitride2 Thickness Uniformity 2016
- LS Nitride2 Thickness Uniformity 2017
- LS Nitride2 Thickness Uniformity 2018
- LS Nitride2 Thickness Uniformity 2019
- LS Nitride2 Thickness Uniformity 2020
- LS Nitride2 Thickness Uniformity 2021
Amorphous-Si deposition (PECVD #2)
Cleaning Recipes (PECVD #2)
Cleaning Procedure (PECVD#2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe: "STD CF4/O2 Clean recipe"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
Film Deposited | Cleaning Time (Dry) |
---|---|
SiO2 | 1 min. clean for every 1 min. deposition |
Si3N4 | 1 min. clean for every 7 min of deposition |
If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
Historical Particulate Data
Standard Recipes
SiO2 LDR 250C Deposition (Unaxis VLR)
Low-Deposition Rate SiO2
Historical Data
Thin-Film Properties
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure here.
Uniformity Data
SiO2 HDR 250C Deposition (Unaxis VLR)
High-Deposition Rate SiO2
Historical Data
Thin-Film Properties
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure here.
Uniformity Data
SiN 250C deposition (Unaxis VLR)
Historical Data
Thin-Film Properties
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure here.
Uniformity Data
SiN LS 250C Deposition (Unaxis VLR)
Low Stress Silicon-Nitride
Historical Data
To Be Added
Thin-Film Properties
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure here.
Uniformity Data
Cleaning Recipes (Unaxis VLR Dep)
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min