Difference between revisions of "Old Deposition Data - NastaziaM 2021-11-22"

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(added hyperlinks of present data)
(Inserted hyperlinks for historical data and plots)
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=[[PECVD 1 (PlasmaTherm 790)]]=
  
=[[PECVD 1 (PlasmaTherm 790)]]=
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  +
=== [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots] ===
   
 
==SiO<sub>2</sub> [PECVD 1]==
  
==SiO<sub>2</sub> [PECVD 1]==
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===Historical Data===
  
===Historical Data===
−
SiO<sub>2</sub> [PECVD 1] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>]
−
<br />
  
 
==Si<sub>3</sub>N<sub>4</sub> [PECVD 1]==
  
==Si<sub>3</sub>N<sub>4</sub> [PECVD 1]==
   
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===Historical Data===
  
===Historical Data===
−
Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>]
−
<br />
  
   
 
==Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2]==
  
==Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2]==
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===Present Data===
  
===Present Data===
−
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Present Data
 +
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1515630363 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Present Data</nowiki>]
   
 
===Historical Data===
  
===Historical Data===
−
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 1] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>]
−
<br />
  
 
==Standard Cleaning Procedure [PECVD 1]==
  
==Standard Cleaning Procedure [PECVD 1]==
 
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
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=[[PECVD 2 (Advanced Vacuum)]]=
  
=[[PECVD 2 (Advanced Vacuum)]]=
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  +
=== [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Plots] ===
   
 
==SiO<sub>2</sub> [PECVD 2]==
  
==SiO<sub>2</sub> [PECVD 2]==
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===Historical Data===
  
===Historical Data===
−
SiO<sub>2</sub> [PECVD 2] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>]
−
<br />
  
 
==Si<sub>3</sub>N<sub>4</sub> [PECVD 2]==
  
==Si<sub>3</sub>N<sub>4</sub> [PECVD 2]==
   
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===Historical Data===
  
===Historical Data===
−
Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>]
−
<br />
  
   
 
==Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2]==
  
==Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2]==
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===Historical Data===
  
===Historical Data===
−
Low Stress Si<sub>3</sub>N<sub>4</sub> [PECVD 2] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=268003895 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>]
−
<br />
  
 
==Standard Cleaning Procedure [PECVD 2]==
  
==Standard Cleaning Procedure [PECVD 2]==
 
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
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The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
  
The system currently has Deuterated Silane (SiD<sub>4</sub>) installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
  +
  +
=== [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Plots] ===
   
 
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
  
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
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===Historical Data===
  
===Historical Data===
−
Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
−
<br />
  
   
 
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
  
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==
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===Historical Data===
  
===Historical Data===
−
High Deposition Rate SiO<sub>2</sub> [ICP-PECVD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
−  
−  
 
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
  
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
   
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===Historical Data===
  
===Historical Data===
−
Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
−
<br />
  
   
 
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
  
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==
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===Historical Data===
  
===Historical Data===
−
Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] Historical Data</nowiki>]
−
<br />
  
 
==Standard Cleaning Procedure [ICP-PECVD]==
  
==Standard Cleaning Procedure [ICP-PECVD]==
 
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
  
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
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===Standard Clean Recipe===
  
===Standard Clean Recipe===
−
<br />
  
 
=[[Ion Beam Deposition (Veeco NEXUS)]]=
  
=[[Ion Beam Deposition (Veeco NEXUS)]]=
  +
  +
=== [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Plots] ===
   
 
==SiO<sub>2</sub> [IBD]==
  
==SiO<sub>2</sub> [IBD]==
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===Historical Data===
  
===Historical Data===
−
SiO<sub>2</sub> [IBD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=700537698 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>]
−
<br />
  
   
 
==Si<sub>3</sub>N<sub>4</sub> [IBD]==
  
==Si<sub>3</sub>N<sub>4</sub> [IBD]==
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===Historical Data===
  
===Historical Data===
−
Si<sub>3</sub>N<sub>4</sub> [IBD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2093120876 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Historical Data</nowiki>]
−
<br />
  
 
==Ta<sub>2</sub>O<sub>5</sub> [IBD]==
  
==Ta<sub>2</sub>O<sub>5</sub> [IBD]==
   
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===Historical Data===
  
===Historical Data===
−
Ta<sub>2</sub>O<sub>5</sub> [IBD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1075234846 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>]
−
<br />
  
 
==Al<sub>2</sub>O<sub>3</sub> [IBD]==
  
==Al<sub>2</sub>O<sub>3</sub> [IBD]==
   
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===Historical Data===
  
===Historical Data===
−
Al<sub>2</sub>O<sub>3</sub> [IBD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1294329492 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Historical Data</nowiki>]
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−
<br />
  
 
==TiO<sub>2</sub> [IBD]==
  
==TiO<sub>2</sub> [IBD]==
   
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===Historical Data===
  
===Historical Data===
−
TiO<sub>2</sub> [IBD] Historical Data
 +
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1327808550 TiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>]
−
<br />
  
 
==Standard Cleaning Procedure [ICP-PECVD]==
  
==Standard Cleaning Procedure [ICP-PECVD]==
 
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
  
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

Revision as of 12:45, 30 November 2021

Back to Vacuum Deposition Recipes

PECVD 1 (PlasmaTherm 790)

PECVD 1 Plots

SiO2 [PECVD 1]

Standard Recipe

SiO2 [PECVD 1] Standard Recipe

Present Data

SiO2 [PECVD 1] Present Data

Historical Data

SiO2 [PECVD 1] Historical Data

Si3N4 [PECVD 1]

Standard Recipe

Si3N4 [PECVD 1] Standard Recipe

Present Data

Si3N4 [PECVD 1] Present Data

Historical Data

Si3N4 [PECVD 1] Historical Data

Low Stress Si3N4 [PECVD 2]

Standard Recipe

Low Stress Si3N4 [PECVD 1] Standard Recipe

Present Data

Low Stress Si3N4 [PECVD 1] Present Data

Historical Data

Low Stress Si3N4 [PECVD 1] Historical Data

Standard Cleaning Procedure [PECVD 1]

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Cleaning Recipe [CF4/O2 Clean]

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

PECVD 2 Plots

SiO2 [PECVD 2]

Standard Recipe

SiO2 [PECVD 2] Standard Recipe

Present Data

SiO2 [PECVD 2] Present Data

Historical Data

SiO2 [PECVD 2] Historical Data

Si3N4 [PECVD 2]

Standard Recipe

Si3N4 [PECVD 2] Standard Recipe

Present Data

Si3N4 [PECVD 2] Present Data

Historical Data

Si3N4 [PECVD 2] Historical Data

Low Stress Si3N4 [PECVD 2]

Standard Recipe

Low Stress Si3N4 [PECVD 2] Standard Recipe

Present Data

Low Stress Si3N4 [PECVD 2] Present Data

Historical Data

Low Stress Si3N4 [PECVD 2] Historical Data

Standard Cleaning Procedure [PECVD 2]

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe [STD CF4/O2 Clean recipe]

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.


Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

ICP-PECVD Plots

Low Deposition Rate SiO2 [ICP-PECVD]

Standard Recipe

Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

Present Data

Low Deposition Rate SiO2 [ICP-PECVD] Present Data

Historical Data

Low Deposition Rate SiO2 [ICP-PECVD] Historical Data

High Deposition Rate SiO2 [ICP-PECVD]

Standard Recipe

High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

Present Data

High Deposition Rate SiO2 [ICP-PECVD] Present Data

Historical Data

High Deposition Rate SiO2 [ICP-PECVD] Historical Data

Si3N4 [ICP-PECVD]

Standard Recipe

Si3N4 [ICP-PECVD] Standard Recipe

Present Data

Si3N4 [ICP-PECVD] Present Data

Historical Data

Si3N4 [ICP-PECVD] Historical Data

Low Stress Si3N4 [ICP-PECVD]

Standard Recipe

Low Stress Si3N4 [ICP-PECVD] Standard Recipe

Present Data

Low Stress Si3N4 [ICP-PECVD] Present Data

Historical Data

Low Stress Si3N4 [ICP-PECVD] Historical Data

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe

Ion Beam Deposition (Veeco NEXUS)

IBD Plots

SiO2 [IBD]

Standard Recipe

SiO2 [IBD] Standard Recipe

Present Data

SiO2 [IBD] Present Data

Historical Data

SiO2 [IBD] Historical Data

Si3N4 [IBD]

Standard Recipe

Si3N4 [IBD] Standard Recipe

Present Data

Si3N4 [IBD] Present Data

Historical Data

Si3N4 [IBD] Historical Data

Ta2O5 [IBD]

Standard Recipe

Ta2O5 [IBD] Standard Recipe

Present Data

Ta2O5 [IBD] Present Data

Historical Data

Ta2O5 [IBD] Historical Data

Al2O3 [IBD]

Standard Recipe

Al2O3 [IBD] Standard Recipe

Present Data

Al2O3 [IBD] Present Data

Historical Data

Al2O3 [IBD] Historical Data

TiO2 [IBD]

Standard Recipe

TiO2 [IBD] Standard Recipe

Present Data

TiO2 [IBD] Present Data

Historical Data

TiO2 [IBD] Historical Data

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

Standard Clean Recipe

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