Difference between revisions of "Old Deposition Data - NastaziaM 2021-11-22"

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Testing
  
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<big>Back to [[Vacuum Deposition Recipes]].</big>
  +
  +
== Contents ==
  +
  +
* [[PECVD Recipes#PECVD%201%20.28PlasmaTherm%20790.29|1 PECVD 1 (PlasmaTherm 790)]]
  +
** [[PECVD Recipes#Historical%20Particulate%20Data|1.1 Historical Particulate Data]]
  +
** [[PECVD Recipes#SiN%20deposition%20.28PECVD%20.231.29|1.2 SiN deposition (PECVD #1)]]
  +
*** [[PECVD Recipes#Historical%20Data|1.2.1 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties|1.2.1.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Uniformity%20Data|1.2.1.2 Uniformity Data]]
  +
** [[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.231.29|1.3 SiO<sub>2</sub> deposition (PECVD #1)]]
  +
*** [[PECVD Recipes#Historical%20Data%202|1.3.1 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%202|1.3.1.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Thick-Film%20Properties|1.3.1.2 Thick-Film Properties]]
  +
*** [[PECVD Recipes#Uniformity%20Data%202|1.3.2 Uniformity Data]]
  +
** [[PECVD Recipes#Low-Stress%20SiN%20-%20LS-SiN%20.28PECVD.231.29|1.4 Low-Stress SiN - LS-SiN (PECVD#1)]]
  +
** [[PECVD Recipes#SiOxNy%20deposition%20.28PECVD%20.231.29|1.5 SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)]]
  +
** [[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.231.29|1.6 Cleaning Recipes (PECVD #1)]]
  +
*** [[PECVD Recipes#Standard%20Cleaning%20Recipe:%20.22CF4.2FO2%20Clean.22|1.6.1 Standard Cleaning Recipe: "CF4/O2 Clean"]]
  +
* [[PECVD Recipes#PECVD%202%20.28Advanced%20Vacuum.29|2 PECVD 2 (Advanced Vacuum)]]
  +
** [[PECVD Recipes#Historical%20Particulate%20Data%202|2.1 Historical Particulate Data]]
  +
** [[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.232.29|2.2 SiO<sub>2</sub> deposition (PECVD #2)]]
  +
*** [[PECVD Recipes#Standard%20Recipe|2.2.1 Standard Recipe]]
  +
*** [[PECVD Recipes#Historical%20Data%203|2.2.2 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%203|2.2.2.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%204|2.2.2.2 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Uniformity%20Data%203|2.2.2.3 Uniformity Data]]
  +
** [[PECVD Recipes#SiN%20deposition%20.28PECVD%20.232.29|2.3 SiN deposition (PECVD #2)]]
  +
*** [[PECVD Recipes#Standard%20Recipe%202|2.3.1 Standard Recipe]]
  +
*** [[PECVD Recipes#Historical%20Data%204|2.3.2 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%205|2.3.2.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Uniformity%20Data%204|2.3.2.2 Uniformity Data]]
  +
** [[PECVD Recipes#Low-Stress%20SiN%20deposition%20.28PECVD%20.232.29|2.4 Low-Stress SiN deposition (PECVD #2)]]
  +
*** [[PECVD Recipes#Standard%20Recipe%203|2.4.1 Standard Recipe]]
  +
*** [[PECVD Recipes#Historical%20Data%205|2.4.2 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%206|2.4.2.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Uniformity%20Data%205|2.4.2.2 Uniformity Data]]
  +
** [[PECVD Recipes#Amorphous-Si%20deposition%20.28PECVD%20.232.29|2.5 Amorphous-Si deposition (PECVD #2)]]
  +
** [[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.232.29|2.6 Cleaning Recipes (PECVD #2)]]
  +
*** [[PECVD Recipes#Cleaning%20Procedure%20.28PECVD.232.29|2.6.1 Cleaning Procedure (PECVD#2)]]
  +
*** [[PECVD Recipes#Standard%20Clean%20Recipe:%20.22STD%20CF4.2FO2%20Clean%20recipe.22|2.6.2 Standard Clean Recipe: "STD CF4/O2 Clean recipe"]]
  +
*** [[PECVD Recipes#Clean%20Times%20.28PECVD.232.29|2.6.3 Clean Times (PECVD#2)]]
  +
* [[PECVD Recipes#ICP-PECVD%20.28Unaxis%20VLR.29|3 ICP-PECVD (Unaxis VLR)]]
  +
** [[PECVD Recipes#Historical%20Particulate%20Data%203|3.1 Historical Particulate Data]]
  +
** [[PECVD Recipes#Standard%20Recipes|3.2 Standard Recipes]]
  +
** [[PECVD Recipes#SiO2%20LDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.3 SiO2 LDR 250C Deposition (Unaxis VLR)]]
  +
*** [[PECVD Recipes#Historical%20Data%206|3.3.1 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%207|3.3.1.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Uniformity%20Data%206|3.3.1.2 Uniformity Data]]
  +
** [[PECVD Recipes#SiO2%20HDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.4 SiO2 HDR 250C Deposition (Unaxis VLR)]]
  +
*** [[PECVD Recipes#Historical%20Data%207|3.4.1 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%208|3.4.1.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Uniformity%20Data%207|3.4.1.2 Uniformity Data]]
  +
** [[PECVD Recipes#SiN%20250C%20deposition%20.28Unaxis%20VLR.29|3.5 SiN 250C deposition (Unaxis VLR)]]
  +
*** [[PECVD Recipes#Historical%20Data%208|3.5.1 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%209|3.5.1.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Uniformity%20Data%208|3.5.1.2 Uniformity Data]]
  +
** [[PECVD Recipes#SiN%20LS%20250C%20Deposition%20.28Unaxis%20VLR.29|3.6 SiN LS 250C Deposition (Unaxis VLR)]]
  +
*** [[PECVD Recipes#Historical%20Data%209|3.6.1 Historical Data]]
  +
**** [[PECVD Recipes#Thin-Film%20Properties%2010|3.6.1.1 Thin-Film Properties]]
  +
**** [[PECVD Recipes#Uniformity%20Data%209|3.6.1.2 Uniformity Data]]
  +
** [[PECVD Recipes#Cleaning%20Recipes%20.28Unaxis%20VLR%20Dep.29|3.7 Cleaning Recipes (Unaxis VLR Dep)]]
  +
  +
= [[PECVD 1 (PlasmaTherm 790)]] =
  +
  +
==== Historical Particulate Data ====
  +
  +
* Particulates(Gain4) in PECVD#1-OLD DATA 2015
  +
* Particulates(Gain4) in PECVD#1-OLD DATA 2016
  +
* Particulates(Gain4) in PECVD#1-OLD DATA 2017
  +
* Particulates in PECVD#1 films 2017
  +
* Particulates in PECVD#1 films 2018
  +
* Particulates in PECVD#1 films 2019
  +
* Particulates in PECVD#1 films 2020
  +
* Particulates in PECVD#1 films 2021
  +
  +
== SiN deposition (PECVD #1) ==
  +
  +
* Si3N4 Standard Recipe
  +
  +
==== Historical Data ====
  +
  +
===== Thin-Film Properties =====
  +
  +
* SiN 100nm Data 2014
  +
* SiN 100nm Data 2015
  +
* SiN 100nm Data 2016
  +
* SiN 100nm Data 2017
  +
* SiN 300nm Data 2017
  +
* SiN 300nm Data 2018
  +
* SiN 300nm Data 2019
  +
* SiN 300nm Data 2020
  +
* SiN 300nm Data 2021
  +
  +
===== Uniformity Data =====
  +
  +
* SiN 100 nm Thickness uniformity 2014
  +
* SiN 100 nm Thickness uniformity 2015
  +
* SiN 100 nm Thickness uniformity 2016
  +
* SiN 100 nm Thickness uniformity 2017
  +
* SiN 300nm Thickness uniformity 2017
  +
* SiN 300nm Thickness uniformity 2018
  +
* SiN 300nm Thickness uniformity 2019
  +
* SiN 300nm Thickness uniformity 2020
  +
* SiN 300nm Thickness uniformity 2021
  +
  +
== SiO<sub>2</sub> deposition (PECVD #1) ==
  +
  +
* SiO2 Standard Recipe
  +
  +
==== Historical Data ====
  +
  +
===== Thin-Film Properties =====
  +
  +
* SiO<sub>2</sub> 100nm Data 2014
  +
* SiO<sub>2</sub> 100nm Data 2015
  +
* SiO<sub>2</sub> 100nm Data 2016
  +
* SiO<sub>2</sub> 100nm Data 2017
  +
* SiO<sub>2</sub> 300nm Data 2017
  +
* SiO<sub>2</sub> 300nm Data 2018
  +
* SiO<sub>2</sub> 300nm Data 2019
  +
* SiO<sub>2</sub> 300nm Data 2020
  +
* SiO<sub>2</sub> 300nm Data 2021
  +
  +
===== Thick-Film Properties =====
  +
  +
* SiO<sub>2</sub> Thick film Data 2021
  +
  +
==== Uniformity Data ====
  +
  +
* SiO<sub>2</sub> 100nm Thickness uniformity 2014
  +
* SiO<sub>2</sub> 100 nm Thickness uniformity 2015
  +
* SiO<sub>2</sub> 100 nmThickness uniformity 2016
  +
* SiO<sub>2</sub> 100nm Thickness uniformity 2017
  +
* SiO<sub>2</sub> 300nm Thickness uniformity 2017
  +
* SiO<sub>2</sub> 300nm Thickness uniformity 2018
  +
* SiO<sub>2</sub> 300nm Thickness uniformity 2019
  +
* SiO<sub>2</sub> 300nm Thickness uniformity 2020
  +
* SiO<sub>2</sub> 300nm Thickness uniformity 2021
  +
  +
== Low-Stress SiN - LS-SiN (PECVD#1) ==
  +
  +
* [[Images/4/4a/New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]]
  +
* LS SiN Data 2014
  +
* LS SiN 1000A Thickness uniformity 2014
  +
  +
== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) ==
  +
  +
* [[Images/2/24/New PECVD1-LS SION-recipe 2014 LS SION recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]]
  +
* SiO<sub>x</sub>N<sub>y</sub> Data 2014
  +
* SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014
  +
  +
== Cleaning Recipes (PECVD #1) ==
  +
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  +
  +
# Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  +
# Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
  +
  +
=== Standard Cleaning Recipe: "CF4/O2 Clean" ===
  +
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
  +
  +
= [[PECVD 2 (Advanced Vacuum)]] =
  +
  +
==== Historical Particulate Data ====
  +
  +
* Particulates (Gain4) in PECVD#2 2015
  +
* Particulates (Gain4) in PECVD#2 2016
  +
* Particulates (Gain4) in PECVD#2 2017
  +
  +
* Particulates in PECVD#2 films 2017
  +
* Particulates in PECVD#2 films 2018
  +
* Particulates in PECVD#2 films 2019
  +
* Particulates in PECVD#2 films 2020
  +
* Particulates in PECVD#2 films 2021
  +
  +
== SiO<sub>2</sub> deposition (PECVD #2) ==
  +
  +
==== Standard Recipe ====
  +
  +
* STD SiO2 Recipe
  +
  +
==== Historical Data ====
  +
  +
===== Thin-Film Properties =====
  +
  +
* Oxide Data 2014
  +
* Oxide Data 2015
  +
* Oxide data 2016
  +
* Oxide Data 2017
  +
* Oxide Data 2018
  +
* Oxide Data 2019
  +
* Oxide Data 2020
  +
* Oxide Data 2021
  +
  +
===== Thin-Film Properties =====
  +
  +
* Thick Oxide Data 2021
  +
  +
===== Uniformity Data =====
  +
  +
* Oxide Thickness Uniformity 2014
  +
* Oxide Thickness Uniformity 2015
  +
* Oxide Thickness Uniformity 2016
  +
* Oxide Thickness Uniformity 2017
  +
* Oxide Thickness Uniformity 2018
  +
* Oxide Thickness Uniformity 2019
  +
* Oxide Thickness Uniformity 2020
  +
* Oxide Thickness Uniformity 2021
  +
  +
== SiN deposition (PECVD #2) ==
  +
  +
==== Standard Recipe ====
  +
  +
* [[Images/4/4c/SiNx Films by PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]]
  +
* STD Nitride2 Recipe
  +
  +
==== Historical Data ====
  +
  +
===== Thin-Film Properties =====
  +
  +
* Nitride2 Data 2014
  +
* Nitride2 Data 2015
  +
* Nitride2 Data 2016
  +
* Nitride2 Data 2017
  +
* Nitride2 Data 2018
  +
* Nitride2 Data 2019
  +
* Nitride2 Data 2020
  +
* Nitride2 Data 2021
  +
  +
===== Uniformity Data =====
  +
  +
* Nitride2 Thickness Uniformity 2014
  +
* Nitride2 Thickness Uniformity 2015
  +
* Nitride2 Thickness Uniformity 2016
  +
* Nitride2 Thickness Uniformity 2017
  +
* Nitride2 Thickness Uniformity 2018
  +
* Nitride2 Thickness Uniformity 2019
  +
* Nitride2 Thickness Uniformity 2020
  +
* Nitride2 Thickness Uniformity 2021
  +
  +
== Low-Stress SiN deposition (PECVD #2) ==
  +
''Low-Stress SilIcon Nitride (< 100 MPa)''
  +
  +
==== Standard Recipe ====
  +
  +
* STD LS Nitride2 Recipe
  +
* ''Old Versions:''
  +
** [[Images/a/a5/New AdvPECVD-LS Nitride2 300C standard recipe LS Nitride2 standard recipe.pdf|LS Nitride2 Standard Recipe 2014-5/9/2018]]
  +
** [[Images/0/01/STD LSNitride2 5-9-18.pdf|STD LSNitride2 5/9/2018]]
  +
  +
==== Historical Data ====
  +
  +
===== Thin-Film Properties =====
  +
  +
* LS Nitride2 Data 2014
  +
* LS Nitride2 Data 2015
  +
* LS Nitride2 Data 2016
  +
* LS Nitride2 Data 2017
  +
* LS Nitride2 Data 2018
  +
* LS Nitride2 Data 2019
  +
* LS Nitride2 Data 2020
  +
* LS Nitride2 Data 2021
  +
  +
===== Uniformity Data =====
  +
  +
* LS Nitride2 Thickness Uniformity 2014
  +
* LS Nitride2 Thickness Uniformity 2015
  +
* LS Nitride2 Thickness Uniformity 2016
  +
* LS Nitride2 Thickness Uniformity 2017
  +
* LS Nitride2 Thickness Uniformity 2018
  +
* LS Nitride2 Thickness Uniformity 2019
  +
* LS Nitride2 Thickness Uniformity 2020
  +
* LS Nitride2 Thickness Uniformity 2021
  +
  +
== Amorphous-Si deposition (PECVD #2) ==
  +
  +
* [[Images/9/9d/03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]]
  +
* [[Images/0/09/ASi deposition and film stress using AV dep tool.pdf|Amorphous Si Films and Their Stress]]
  +
  +
== Cleaning Recipes (PECVD #2) ==
  +
  +
=== Cleaning Procedure (PECVD#2) ===
  +
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
  +
  +
# (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  +
# Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
  +
  +
=== Standard Clean Recipe: "STD CF4/O2 Clean recipe" ===
  +
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.
  +
  +
=== Clean Times (PECVD#2) ===
  +
{| class="wikitable"
  +
!Film Deposited
  +
!Cleaning Time (Dry)
  +
|-
  +
|SiO<sub>2</sub>
  +
|1 min. clean for every 1 min. deposition
  +
|-
  +
|Si<sub>3</sub>N<sub>4</sub>
  +
|1 min. clean for every 7 min of deposition
  +
|-
  +
|If > 29min total dep time
  +
(Season + Dep)
  +
|Wet Clean the Upper Lid/Chamber
  +
DI water then Isopropyl Alcohol on chamber wall & portholes
  +
|}
  +
  +
= [[ICP-PECVD (Unaxis VLR)]] =
  +
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|'''new procedures''']] to ensure low particle counts in the chamber.
  +
  +
The system currently has '''Deuterated Silane (SiD<sub>4</sub>) installed''' - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.
  +
  +
==== Historical Particulate Data ====
  +
  +
* Particulates in Unaxis films @250C-2019
  +
* Particulates in Unaxis films @250C-2020
  +
  +
==== Standard Recipes ====
  +
  +
* SiO2 LDR 250C Recipe-2020
  +
* SiO2 HDR 250C Recipe-2020
  +
* SiN 250C Recipe-2020
  +
* SiN LS 250C Recipe-2020
  +
  +
== SiO2 LDR 250C Deposition (Unaxis VLR) ==
  +
''Low-Deposition Rate SiO<sub>2</sub>''
  +
  +
==== Historical Data ====
  +
  +
===== Thin-Film Properties =====
  +
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
  +
  +
* SiO2 LDR 250C 300nm Data-2019
  +
* SiO2 LDR 250C 300nm Data-2020
  +
  +
===== Uniformity Data =====
  +
  +
* Thickness Uniformity SiO2 LDR 250C 300nm-2019
  +
* Thickness Uniformity SiO2 LDR 250C 300nm-2020
  +
  +
== SiO2 HDR 250C Deposition (Unaxis VLR) ==
  +
''High-Deposition Rate SiO<sub>2</sub>''
  +
  +
==== Historical Data ====
  +
  +
===== Thin-Film Properties =====
  +
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].
  +
  +
* SiO2 HDR 250C 300nm Data-2019
  +
* SiO2 HDR 250C 300nm Data-2020
  +
  +
===== Uniformity Data =====
  +
  +
* Thickness Uniformity SiO2 HDR 250C 300nm-2019
  +
* Thickness Uniformity SiO2 HDR 250C 300nm-2020
  +
  +
== SiN 250C deposition (Unaxis VLR) ==
  +
  +
==== Historical Data ====
  +
  +
===== Thin-Film Properties =====
  +
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]].
  +
  +
* SiN 250C 300nm Data-2020
  +
  +
===== Uniformity Data =====
  +
  +
* Thickness Uniformity SiN 250C 300nm-2020
  +
  +
== SiN LS 250C Deposition (Unaxis VLR) ==
  +
''Low Stress Silicon-Nitride''
  +
  +
==== Historical Data ====
  +
''To Be Added''
  +
  +
===== Thin-Film Properties =====
  +
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]].
  +
  +
* SiN LS 250C 300nm Data-2020
  +
  +
===== Uniformity Data =====
  +
  +
* Thickness Uniformity SiN LS 250C 300nm-2020
  +
  +
== Cleaning Recipes (Unaxis VLR Dep) ==
  +
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.
  +
  +
* SiNx etches at 20nm/min
  +
* SiO2 etches at 40nm/min
  +
  +
<br />
  +
  +
== [[Ion Beam Deposition (Veeco NEXUS)]] ==
  +
  +
* IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
  +
** '''All users are required to enter their calibration deps (simple test deps only)'''
  +
* Particulates in SiO2 and Ta2O5 in 2015
  +
  +
=== SiO<sub>2</sub> deposition (IBD) ===
  +
  +
==== SiO<sub>2</sub> Historical Data ====
  +
  +
* [[Images/8/8d/New IBD SiO2 Standard Recipe.pdf|SiO<sub>2</sub> Standard Recipe]]
  +
* SiO<sub>2</sub> Data December 2014
  +
* SiO<sub>2</sub> Thickness uniformity 2014
  +
* SiO<sub>2</sub> Data-15min depositions 2015
  +
* SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015
  +
* SiO<sub>2</sub> Data-1hr depositions 2015
  +
* SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015
  +
* SiO<sub>2</sub> Data-1hr depositions 2016
  +
* SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016
  +
  +
==== SiO<sub>2</sub> 1hr deposition properties: ====
  +
  +
* Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
  +
* HF e.r.~350 nm/min
  +
* Stress ≈ -390MPa (compressive)
  +
* Refractive Index: ≈ 1.494
  +
* [Cauchy Parameters] (350-2000nm):
  +
** A = 1.480
  +
** B = 0.00498
  +
** C = -3.2606e-5
  +
  +
=== Si<sub>3</sub>N<sub>4</sub> deposition (IBD) ===
  +
  +
* [[Images/d/d3/IBD SiNdeposition.pdf|Si<sub>3</sub>N<sub>4</sub> Standard Recipe]]
  +
* Si<sub>3</sub>N<sub>4</sub> Data December 2014
  +
* Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014
  +
  +
* Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  +
* HF e.r.~11nm/min
  +
* Stress ≈ -1590MPa (compressive)
  +
* Refractive Index: ≈ 1.969
  +
* [Cauchy Parameters] (350-2000nm):
  +
** A = 2.000
  +
** B = 0.01974
  +
** C = 1.2478e-4
  +
  +
=== SiO<sub>x</sub>N<sub>y</sub> deposition (IBD) ===
  +
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.
  +
{| class="wikitable"
  +
!
  +
|}
  +
{| class="wikitable"
  +
!IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.
  +
!
  +
|}
  +
{| class="wikitable"
  +
!Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.
  +
|}
  +
  +
=== Ta<sub>2</sub>O<sub>5</sub> deposition (IBD) ===
  +
  +
==== Ta2O5 Historical Data (IBD) ====
  +
  +
* [[Images/8/85/IBD Ta2O5 deposition details.pdf|Ta<sub>2</sub>O<sub>5</sub> Standard Recipe]]
  +
* Ta<sub>2</sub>O<sub>5</sub> Data December 2014
  +
* Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity 2014
  +
  +
* Ta<sub>2</sub>O<sub>5</sub> Data December-15 min depositions 2015
  +
* Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity-15 min depositions 2015
  +
* Ta<sub>2</sub>O<sub>5</sub> Data December-1hr depositions 2015
  +
* Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity-1hr depositions 2015
  +
* Ta<sub>2</sub>O<sub>5</sub> Data December-1hr depositions 2016
  +
* Ta<sub>2</sub>O<sub>5</sub> Thickness uniformity-1hr depositions 2016
  +
  +
==== Ta2O5 Deposition/Film Properies (IBD) ====
  +
  +
* Ta2O5 1hr depositions:
  +
* Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  +
* HF e.r.~2 nm/min
  +
* Stress ≈ -232MPa (compressive)
  +
* Refractive Index: ≈ 2.172
  +
* [Cauchy Parameters] (350-2000nm):
  +
** A = 2.1123
  +
** B = 0.018901
  +
** C = -0.016222
  +
  +
=== TiO<sub>2</sub> deposition (IBD) ===
  +
  +
* [[Images/3/3b/New IBD TiO2 deposition.pdf|TiO<sub>2</sub> Standard Recipe]]
  +
* TiO<sub>2</sub> Data December 2014
  +
* TiO<sub>2</sub> Thickness uniformity 2014
  +
  +
* Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  +
* HF etch rate ~5.34nm/min
  +
* Stress ≈ -445MPa (compressive)
  +
* Refractive Index: ≈ 2.259
  +
* [Cauchy Parameters] (350-2000nm):
  +
** A = 2.435
  +
** B = -4.9045e-4
  +
** C = 0.01309
  +
* Absorbing < ~350nm
  +
  +
=== Al<sub>2</sub>O<sub>3</sub> deposition (IBD) ===
  +
  +
* Al2O3 standard recipe: 1_Al2O3_dep
  +
  +
* Al2O3 Data 2018
  +
* Al2O3 Thickness uniformity 2018
  +
  +
* Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)
  +
* HF etch rate ~167nm/min
  +
* Stress ≈ -332MPa (compressive)
  +
* Refractive Index: ≈ 1.656
  +
* [Cauchy Parameters] (350-2000nm):( working on)
  +
** A =
  +
** B =
  +
** C =
  +
* Absorbing < ~350nm
  +
  +
== Reference Recipes (Disabled Tools) ==
  +
  +
=== [[Sputter 2 (SFI Endeavor)|<big>Sputter 2 (SFI Endeavor)</big>]] ===
  +
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''
  +
'''Al Deposition (Sputter 2)'''
  +
  +
* [[Images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf|Al Deposition Recipe]]
  +
  +
'''AlN<sub>x</sub> Deposition (Sputter 2)'''
  +
  +
* [[Images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf|AlN<sub>x</sub> Deposition Recipe]]
  +
  +
'''Au Deposition (Sputter 2)'''
  +
  +
* [[Images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf|Au Deposition Recipe]]
  +
  +
'''TiO<sub>2</sub> Deposition (Sputter 2)'''
  +
  +
* [[Images/c/c4/22-TiO2-Film-Sputter-2.pdf|TiO2<sub>2</sub> Deposition Recipe]]

Revision as of 08:54, 30 November 2021


Back to Vacuum Deposition Recipes.

Contents

PECVD 1 (PlasmaTherm 790)

Historical Particulate Data

  • Particulates(Gain4) in PECVD#1-OLD DATA 2015
  • Particulates(Gain4) in PECVD#1-OLD DATA 2016
  • Particulates(Gain4) in PECVD#1-OLD DATA 2017
  • Particulates in PECVD#1 films 2017
  • Particulates in PECVD#1 films 2018
  • Particulates in PECVD#1 films 2019
  • Particulates in PECVD#1 films 2020
  • Particulates in PECVD#1 films 2021

SiN deposition (PECVD #1)

  • Si3N4 Standard Recipe

Historical Data

Thin-Film Properties
  • SiN 100nm Data 2014
  • SiN 100nm Data 2015
  • SiN 100nm Data 2016
  • SiN 100nm Data 2017
  • SiN 300nm Data 2017
  • SiN 300nm Data 2018
  • SiN 300nm Data 2019
  • SiN 300nm Data 2020
  • SiN 300nm Data 2021
Uniformity Data
  • SiN 100 nm Thickness uniformity 2014
  • SiN 100 nm Thickness uniformity 2015
  • SiN 100 nm Thickness uniformity 2016
  • SiN 100 nm Thickness uniformity 2017
  • SiN 300nm Thickness uniformity 2017
  • SiN 300nm Thickness uniformity 2018
  • SiN 300nm Thickness uniformity 2019
  • SiN 300nm Thickness uniformity 2020
  • SiN 300nm Thickness uniformity 2021

SiO2 deposition (PECVD #1)

  • SiO2 Standard Recipe

Historical Data

Thin-Film Properties
  • SiO2 100nm Data 2014
  • SiO2 100nm Data 2015
  • SiO2 100nm Data 2016
  • SiO2 100nm Data 2017
  • SiO2 300nm Data 2017
  • SiO2 300nm Data 2018
  • SiO2 300nm Data 2019
  • SiO2 300nm Data 2020
  • SiO2 300nm Data 2021
Thick-Film Properties
  • SiO2 Thick film Data 2021

Uniformity Data

  • SiO2 100nm Thickness uniformity 2014
  • SiO2 100 nm Thickness uniformity 2015
  • SiO2 100 nmThickness uniformity 2016
  • SiO2 100nm Thickness uniformity 2017
  • SiO2 300nm Thickness uniformity 2017
  • SiO2 300nm Thickness uniformity 2018
  • SiO2 300nm Thickness uniformity 2019
  • SiO2 300nm Thickness uniformity 2020
  • SiO2 300nm Thickness uniformity 2021

Low-Stress SiN - LS-SiN (PECVD#1)

SiOxNy deposition (PECVD #1)

Cleaning Recipes (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Cleaning Recipe: "CF4/O2 Clean"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

Historical Particulate Data

  • Particulates (Gain4) in PECVD#2 2015
  • Particulates (Gain4) in PECVD#2 2016
  • Particulates (Gain4) in PECVD#2 2017
  • Particulates in PECVD#2 films 2017
  • Particulates in PECVD#2 films 2018
  • Particulates in PECVD#2 films 2019
  • Particulates in PECVD#2 films 2020
  • Particulates in PECVD#2 films 2021

SiO2 deposition (PECVD #2)

Standard Recipe

  • STD SiO2 Recipe

Historical Data

Thin-Film Properties
  • Oxide Data 2014
  • Oxide Data 2015
  • Oxide data 2016
  • Oxide Data 2017
  • Oxide Data 2018
  • Oxide Data 2019
  • Oxide Data 2020
  • Oxide Data 2021
Thin-Film Properties
  • Thick Oxide Data 2021
Uniformity Data
  • Oxide Thickness Uniformity 2014
  • Oxide Thickness Uniformity 2015
  • Oxide Thickness Uniformity 2016
  • Oxide Thickness Uniformity 2017
  • Oxide Thickness Uniformity 2018
  • Oxide Thickness Uniformity 2019
  • Oxide Thickness Uniformity 2020
  • Oxide Thickness Uniformity 2021

SiN deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
  • Nitride2 Data 2014
  • Nitride2 Data 2015
  • Nitride2 Data 2016
  • Nitride2 Data 2017
  • Nitride2 Data 2018
  • Nitride2 Data 2019
  • Nitride2 Data 2020
  • Nitride2 Data 2021
Uniformity Data
  • Nitride2 Thickness Uniformity 2014
  • Nitride2 Thickness Uniformity 2015
  • Nitride2 Thickness Uniformity 2016
  • Nitride2 Thickness Uniformity 2017
  • Nitride2 Thickness Uniformity 2018
  • Nitride2 Thickness Uniformity 2019
  • Nitride2 Thickness Uniformity 2020
  • Nitride2 Thickness Uniformity 2021

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)

Standard Recipe

Historical Data

Thin-Film Properties
  • LS Nitride2 Data 2014
  • LS Nitride2 Data 2015
  • LS Nitride2 Data 2016
  • LS Nitride2 Data 2017
  • LS Nitride2 Data 2018
  • LS Nitride2 Data 2019
  • LS Nitride2 Data 2020
  • LS Nitride2 Data 2021
Uniformity Data
  • LS Nitride2 Thickness Uniformity 2014
  • LS Nitride2 Thickness Uniformity 2015
  • LS Nitride2 Thickness Uniformity 2016
  • LS Nitride2 Thickness Uniformity 2017
  • LS Nitride2 Thickness Uniformity 2018
  • LS Nitride2 Thickness Uniformity 2019
  • LS Nitride2 Thickness Uniformity 2020
  • LS Nitride2 Thickness Uniformity 2021

Amorphous-Si deposition (PECVD #2)

Cleaning Recipes (PECVD #2)

Cleaning Procedure (PECVD#2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
  2. Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe: "STD CF4/O2 Clean recipe"

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

Clean Times (PECVD#2)

Film Deposited Cleaning Time (Dry)
SiO2 1 min. clean for every 1 min. deposition
Si3N4 1 min. clean for every 7 min of deposition
If > 29min total dep time

(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

Historical Particulate Data

  • Particulates in Unaxis films @250C-2019
  • Particulates in Unaxis films @250C-2020

Standard Recipes

  • SiO2 LDR 250C Recipe-2020
  • SiO2 HDR 250C Recipe-2020
  • SiN 250C Recipe-2020
  • SiN LS 250C Recipe-2020

SiO2 LDR 250C Deposition (Unaxis VLR)

Low-Deposition Rate SiO2

Historical Data

Thin-Film Properties

This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

  • SiO2 LDR 250C 300nm Data-2019
  • SiO2 LDR 250C 300nm Data-2020
Uniformity Data
  • Thickness Uniformity SiO2 LDR 250C 300nm-2019
  • Thickness Uniformity SiO2 LDR 250C 300nm-2020

SiO2 HDR 250C Deposition (Unaxis VLR)

High-Deposition Rate SiO2

Historical Data

Thin-Film Properties

This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure here.

  • SiO2 HDR 250C 300nm Data-2019
  • SiO2 HDR 250C 300nm Data-2020
Uniformity Data
  • Thickness Uniformity SiO2 HDR 250C 300nm-2019
  • Thickness Uniformity SiO2 HDR 250C 300nm-2020

SiN 250C deposition (Unaxis VLR)

Historical Data

Thin-Film Properties

This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure here.

  • SiN 250C 300nm Data-2020
Uniformity Data
  • Thickness Uniformity SiN 250C 300nm-2020

SiN LS 250C Deposition (Unaxis VLR)

Low Stress Silicon-Nitride

Historical Data

To Be Added

Thin-Film Properties

This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure here.

  • SiN LS 250C 300nm Data-2020
Uniformity Data
  • Thickness Uniformity SiN LS 250C 300nm-2020

Cleaning Recipes (Unaxis VLR Dep)

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min


Ion Beam Deposition (Veeco NEXUS)

  • IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
    • All users are required to enter their calibration deps (simple test deps only)
  • Particulates in SiO2 and Ta2O5 in 2015

SiO2 deposition (IBD)

SiO2 Historical Data

  • SiO2 Standard Recipe
  • SiO2 Data December 2014
  • SiO2 Thickness uniformity 2014
  • SiO2 Data-15min depositions 2015
  • SiO2 Thickness uniformity-15 min depositions 2015
  • SiO2 Data-1hr depositions 2015
  • SiO2 Thickness uniformity-1hr depositions 2015
  • SiO2 Data-1hr depositions 2016
  • SiO2 Thickness uniformity-1hr depositions 2016

SiO2 1hr deposition properties:

  • Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~350 nm/min
  • Stress ≈ -390MPa (compressive)
  • Refractive Index: ≈ 1.494
  • [Cauchy Parameters] (350-2000nm):
    • A = 1.480
    • B = 0.00498
    • C = -3.2606e-5

Si3N4 deposition (IBD)

  • Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~11nm/min
  • Stress ≈ -1590MPa (compressive)
  • Refractive Index: ≈ 1.969
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.000
    • B = 0.01974
    • C = 1.2478e-4

SiOxNy deposition (IBD)

These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact Demis for more info.

IBD SiOxNy: Refractive Index vs. O2/N2 Flow.
Dep. Rate of IBD SiOxNy vs. Assist O2 flow.

Ta2O5 deposition (IBD)

Ta2O5 Historical Data (IBD)

  • Ta2O5 Data December-15 min depositions 2015
  • Ta2O5 Thickness uniformity-15 min depositions 2015
  • Ta2O5 Data December-1hr depositions 2015
  • Ta2O5 Thickness uniformity-1hr depositions 2015
  • Ta2O5 Data December-1hr depositions 2016
  • Ta2O5 Thickness uniformity-1hr depositions 2016

Ta2O5 Deposition/Film Properies (IBD)

  • Ta2O5 1hr depositions:
  • Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~2 nm/min
  • Stress ≈ -232MPa (compressive)
  • Refractive Index: ≈ 2.172
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.1123
    • B = 0.018901
    • C = -0.016222

TiO2 deposition (IBD)

  • Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~5.34nm/min
  • Stress ≈ -445MPa (compressive)
  • Refractive Index: ≈ 2.259
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.435
    • B = -4.9045e-4
    • C = 0.01309
  • Absorbing < ~350nm

Al2O3 deposition (IBD)

  • Al2O3 standard recipe: 1_Al2O3_dep
  • Al2O3 Data 2018
  • Al2O3 Thickness uniformity 2018
  • Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~167nm/min
  • Stress ≈ -332MPa (compressive)
  • Refractive Index: ≈ 1.656
  • [Cauchy Parameters] (350-2000nm):( working on)
    • A =
    • B =
    • C =
  • Absorbing < ~350nm

Reference Recipes (Disabled Tools)

Sputter 2 (SFI Endeavor)

This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Old_Deposition_Data_-_NastaziaM_2021-11-22&oldid=159458"