OLD - PECVD2 Recipes

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PECVD 2 (Advanced Vacuum)

Photos

SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 7.93 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.961
  • Stress ≈ 495MPa
  • HF etch rate:~49nm/min

SiO2 deposition (PECVD #2)

  • Deposition Rate: ≈ 28.64 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.475
  • Stress ≈ -260MPa
  • HF etch rate~623nm/min

LS SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 7.87 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.938
  • Stress ≈ 1.76MPa
  • HF etch rate~47nm/min

Amorphous-Si deposition (PECVD #2)