Difference between revisions of "OLD - PECVD2 Recipes"
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
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| − | *Deposition Rate: ≈ 28.64 nm/min (users must calibrate this prior to critical deps) |
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| − | *Refractive Index: ≈ 1.475 |
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| − | *Stress ≈ -260MPa |
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| − | *HF etch rate~623nm/min |
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==LS SiN deposition (PECVD #2) == |
==LS SiN deposition (PECVD #2) == |
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Revision as of 10:12, 11 December 2014
PECVD 2 (Advanced Vacuum)
Photos
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 7.93 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.961
- Stress ≈ 495MPa
- HF etch rate:~49nm/min
SiO2 deposition (PECVD #2)
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 7.87 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.938
- Stress ≈ 1.76MPa
- HF etch rate~47nm/min