Difference between revisions of "OLD - PECVD2 Recipes"
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*Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps) |
||
*Refractive Index: ≈ 1.474 |
*Refractive Index: ≈ 1.474 |
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| − | *Stress ≈ - |
+ | *Stress ≈ -259MPa |
| − | *HF etch rate~ |
+ | *HF etch rate~626nm/min |
==LS SiN deposition (PECVD #2) == |
==LS SiN deposition (PECVD #2) == |
||
Revision as of 07:45, 14 October 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.17 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.957
- Stress ≈ 499MPa
- HF etch rate:~49nm/min
SiO2 deposition (PECVD #2)
- Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.474
- Stress ≈ -259MPa
- HF etch rate~626nm/min
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.14 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.935
- Stress ≈ -7.18MPa
- HF etch rate~48nm/min