Difference between revisions of "Maskless Aligner (Heidelberg MLA150)"

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Maskless Aligner (Heidelberg MLA150)

File:MLA150.jpg

Tool Type	Lithography
Location	Bay 6
Supervisor	Biljana Stamenic
Supervisor Phone	(805) 893-4002
Supervisor E-Mail	biljana@ece.ucsb.edu

Description	Maskless I-Line Photolithography
Manufacturer	Heidelberg Instruments
Model	MLA150
Materials	I-Line Photoresists

About

The MLA150 allows for arbitrary direct patterning of I-Line photoresists, directly from a CAD drawing/file, with alignment to arbitrary features on the sample. The system uses a digital micromirror device ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

The system has a continuous, automatic autofocus, using either a pneumatic or optical detection. This enables lithography on non-planar or curved substrates. We also have the high-aspect ratio (variable/long focal length) option installed for very thick (~70µm) photoresists.

Depending on the exposure options and write area, MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.

Lastly, the greyscale lithography is possible, producing repeatable, slanted or tapered structures in photoresist or photo-active dielectrics like SU-8.

Detailed Specifications

Wafer size:
Wafer / substrate thickness:
Exposure optics:
- Laser #1: 375nm
- Laser #2: 405nm
Focus modes:
Alignment:
- Modes?
- Accuracy:
- Repetability

Additional manufacturer options:
- Focus option?
- Dual lasers?
- High-resolution option?

Uniformity:
Write speeds:

Documentation

MLA150 - Standard Operating Procedure

Design Tools/Info

Recipes

Recipes > Lithography > Maskless Aligner MLA150
- Starting recipes for various I-Line photoresists

@@ Line 11: / Line 11: @@
 }}
 ==About==
-The MLA150 allows for arbitrary direct patterning of I-Line photoresists, directly from a CAD drawing/file, and alignment to arbitrary features on the sample.  The system uses a optical digital light process (MEMS light-field patterning) to programatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.
+The MLA150 allows for arbitrary direct patterning of I-Line photoresists, directly from a CAD drawing/file, with alignment to arbitrary features on the sample. The system uses a  [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.
+The system has a continuous, automatic autofocus, using either a pneumatic or optical detection. This enables lithography on non-planar or curved substrates. We also have the high-aspect ratio (variable/long focal length) option installed for very thick (~70µm) photoresists.
+Depending on the exposure options and write area, MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.
+Lastly, the greyscale lithography is possible, producing repeatable, slanted or tapered structures in photoresist or photo-active dielectrics like SU-8.
 ==Detailed Specifications==
@@ Line 18: / Line 24: @@
 *Wafer / substrate thickness:
 *Exposure optics:
-**Laser #1:
+**Laser #1: 375nm
-**Laser #2:
+**Laser #2: 405nm
 * Focus modes:
 * Alignment:
@@ Line 26: / Line 32: @@
 ** Repetability
-*Additional manufacturer options (none installed on our systems):
+*Additional manufacturer options:
 **Focus option?
 **Dual lasers?