Difference between revisions of "Maskless Aligner (Heidelberg MLA150)"
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==Detailed Specifications== |
==Detailed Specifications== |
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| + | *Maximum Writeable Area: 150 x 150mm |
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*Substrate size: 9-inch square or 200mm round down to 5-mm pieces |
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces |
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*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm |
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm |
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| Line 32: | Line 33: | ||
**Laser #2: 405nm |
**Laser #2: 405nm |
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**Lens NA = 0.95 |
**Lens NA = 0.95 |
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| − | * Alignment Accuracy: ≤ |
+ | * Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm |
* Linewidth variation: ≤100nm (relevant to stitched exposure fields) |
* Linewidth variation: ≤100nm (relevant to stitched exposure fields) |
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* Write Grid (Address Unit): |
* Write Grid (Address Unit): |
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** (No backside alignment) |
** (No backside alignment) |
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==Documentation== |
==Documentation== |
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| ⚫ | [[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator and continuously moving stage. See [https://heidelberg-instruments.com/en/features-technologies/key-features/maskless-lithography.html HIMT] for more info.]] |
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=== Operating Procedures === |
=== Operating Procedures === |
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| − | *[//wiki.nanotech.ucsb.edu/w/images/ |
+ | *[https://wiki.nanotech.ucsb.edu/w/images/f/fc/MLA150_SOP_Rev_G_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 12th 2020 |
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.'' |
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.'' |
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| − | *[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image |
+ | *[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.) |
=== Video Trainings === |
=== Video Trainings === |
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'''Important:''' You must be <u>authorized by a supervisor</u> to use the tool! The video below is provided for reference only, and does not substitute training by NanoFab staff. |
'''Important:''' You must be <u>authorized by a supervisor</u> to use the tool! The video below is provided for reference only, and does not substitute training by NanoFab staff. |
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| − | * [https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id= |
+ | * [https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video (v2, on GauchoSpace/Panopto)] |
| − | |||
| − | === Documentation from HIMT === |
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| ⚫ | [[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator and continuously moving stage. See [https://heidelberg-instruments.com/en/features-technologies/key-features/maskless-lithography.html HIMT] for more info.]] |
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=== [[MLA150 - Troubleshooting|<u>Troubleshooting & Known Bugs</u>]] === |
=== [[MLA150 - Troubleshooting|<u>Troubleshooting & Known Bugs</u>]] === |
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Revision as of 23:57, 22 February 2021
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About
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a digital micromirror device ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.
Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.
The system has a continuous, automatic autofocus, using pneumatic and optical detection. This potentially enables lithography on non-planar or curved substrates.
The software allows for custom drawings and aligment marks to be exposed onto any feature located on the microscope.
Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file.
The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.
Detailed Specifications
- Maximum Writeable Area: 150 x 150mm
- Substrate size: 9-inch square or 200mm round down to 5-mm pieces
- Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
- Exposure optics:
- Digital micromirror device (DMD)
- Laser #1: 375nm
- Laser #2: 405nm
- Lens NA = 0.95
- Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
- Linewidth variation: ≤100nm (relevant to stitched exposure fields)
- Write Grid (Address Unit):
- High Quality Mode (std.): 40nm
- Fast Mode: 100nm
- Additional manufacturer options:
- High-resolution option (Write Mode 1)
- Extended Focus Range
- Variable Focal Depth
- Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
- Greyscale Mode
- (No backside alignment)
Documentation
Exposure method using a spatial light modulator and continuously moving stage. See HIMT for more info.
Operating Procedures
- MLA150 - Standard Operating Procedure - updated Nov 12th 2020
- Includes File-upload procedure, CAD Conversion, Exposure and Alignment.
- Large Image Patterning - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)
Video Trainings
Important: You must be authorized by a supervisor to use the tool! The video below is provided for reference only, and does not substitute training by NanoFab staff.
Troubleshooting & Known Bugs
- See the linked page for troubleshooting/recovery info and workarounds to known bugs.
Design Tools/Info
Recipes
- Recipes > Lithography > Maskless Aligner MLA150
- Starting recipes for various I-Line photoresists