Difference between revisions of "MVD - Wafer Coating - Process Traveler"
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(added procedure from BrianT's PDF) |
m (→Removal: of FDTS Coating: added PEii etch params) |
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Use vapor coating in a clean-dry environment process as follows: |
Use vapor coating in a clean-dry environment process as follows: |
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| − | # Use [[Ashers (Technics PEII)|Technics PEII etcher]] for 2 minutes with O2 at |
+ | # Use [[Ashers (Technics PEII)|Technics PEII etcher]] for 2 minutes with O2 at 0.300T/100W first to “activate” the silicon surface for reaction with the FDTS. |
# Use Standard FDTS program on the MVD tool for this. |
# Use Standard FDTS program on the MVD tool for this. |
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# Hot plate bake at ~100C for 2 minutes following deposition. |
# Hot plate bake at ~100C for 2 minutes following deposition. |
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| − | ## H2O Contact Angle ~ 110 Degrees (measured with [[Goniometer]]) |
+ | ## H2O Contact Angle ~ 110 Degrees (measured with [[Goniometer (Rame-Hart A-100)|Goniometer]]) |
=== Removal: of FDTS Coating === |
=== Removal: of FDTS Coating === |
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| − | [[Ashers (Technics PEII)|Technics PEii O2 etching]] removes this coating effectively, eg. 2min. |
+ | [[Ashers (Technics PEII)|Technics PEii O2 etching]] removes this coating effectively, eg. 2min at the standard 0.300T/100W. |
Latest revision as of 13:38, 26 July 2020
Non-stick FDTS coating on the MVD
Used to make the wafer surface hydrophobic, used in nanoimprinting for coating the imprint master.
Use vapor coating in a clean-dry environment process as follows:
- Use Technics PEII etcher for 2 minutes with O2 at 0.300T/100W first to “activate” the silicon surface for reaction with the FDTS.
- Use Standard FDTS program on the MVD tool for this.
- Hot plate bake at ~100C for 2 minutes following deposition.
- H2O Contact Angle ~ 110 Degrees (measured with Goniometer)
Removal: of FDTS Coating
Technics PEii O2 etching removes this coating effectively, eg. 2min at the standard 0.300T/100W.