Difference between revisions of "Lithography Recipes"

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==General Information==
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__NOTOC__
 
 
This page contains information and links to recipes/datasheets spin-coated materials used in the facility.
 
 
 
 
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*'''[[#PositivePR |Photoresists]]''' 
+
==='''<big>Photolithography Processes</big>'''===
**[[#Photolithography_Recipes |Photo Lithography Recipe section]]
 
***''Has links to starting recipes (spin, bake, exposure, develop etc.).'' 
 
***''Substrate, surface materials, pattern size can often affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
 
**[[#PositivePR  |Stocked Lithography Chemical + Datasheets]]
 
***''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
 
*'''[[#EBLPR |E-beam Lithography Resists]]'''
 
**[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
 
***''Has links to starting recipes.  Substrates and patterns play a large role in process parameters.''
 
**[[#EBLPR |EBL Photoresist Datasheets]]
 
***''Provided for reference, also showing starting recipes and usage info.''
 
*'''[[#NanoImprinting |Nanoimprinting Resists]]'''
 
**''Datasheets are provided with starting recipes and usage info.'' 
 
**''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''
 
  
*'''[[#Underlayers |Underlayers]]'''
+
#'''UV Optical Lithography'''
**''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
+
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
**''Datasheets are provided.''
+
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
*[[#Lift-Off_Techniques |'''Lift-Off Techniques''']]
+
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
**''Verified Recipes for lift-off using various photolith. tools''
+
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
**''General educational description of this technique and it's limitations/considerations.''
+
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
*'''[[Lithography Recipes#Holography Recipes|Holography]]'''
+
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]
**''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''  
+
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
**''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
+
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
*'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': 
+
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]
**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
+
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
**''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.'' 
+
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
**''Datasheets are provided for reference on use of the materials.''
+
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
*'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
+
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]
**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
+
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
**''Used for resolution enhancement.  Not for use in contact aligners, typically used on I-Line Steppers.''
+
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
**''Datasheets provided with usage info.''
+
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
*'''[[#AdhesionPromoters |Adhesion Promoters]]'''
+
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
**''These are used to improve wetting of photoresists to your substrate.''
+
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
**''Datasheets are provided on use of these materials.''
+
#*''Techniques for improving litho. or solving common photolith. problems.''
 +
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
 +
#*''Verified Recipes for lift-off using various photolith. tools''
 +
#*''General educational description of this technique and it's limitations/considerations.''
 +
#'''E-beam Lithography'''
 +
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
 +
#**''Has links to starting recipes.  Substrates and patterns play a large role in process parameters.''
 +
#*[[#EBLPR |EBL Photoresist Datasheets]]
 +
#**''Provided for reference, also showing starting recipes and usage info.''
 +
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
 +
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
 +
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
 +
#*''Datasheets are provided with starting recipes and usage info.''
 +
#[[Lithography Recipes#Edge-Bead Removal|'''Edge-Bead Removal''']]
 +
#*''Edge photoresist removal methods needed for clamp-based etchers''
 +
#*''Improves resolution for contact lithography''
 +
|-
 +
|
  
*'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''   
+
==='''<big>Photolithography Chemicals/Materials</big>'''===
**[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]  
+
 
***''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
+
#'''[[#Underlayers  |Underlayers]]'''
**[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
+
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
***''Recipes for usage of some spin-on dielectrics.''
+
#*''Datasheets are provided.''
*'''[[#Developers |Developers and Removers]]'''
+
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': 
**''Datasheets provided for reference.''
+
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
**''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
+
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
 +
#*''Datasheets are provided for reference on use of the materials.''
 +
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
 +
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
 +
#*''Used for resolution enhancement.  Not for use in contact aligners, typically used on I-Line Steppers.''
 +
#*''Datasheets provided with usage info.''
 +
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
 +
#*''These are used to improve wetting of photoresists to your substrate.''
 +
#*''Datasheets are provided on use of these materials.''
 +
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''   
 +
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]  
 +
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
 +
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
 +
#**''Recipes for usage of some spin-on dielectrics.''
 +
#'''[[#Developers |Developers and Removers]]'''
 +
#*''Datasheets provided for reference.''
 +
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
 
|}
 
|}
 +
 +
==General Photolithography Techniques==
 +
 +
*[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]
 +
**''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''
 +
*[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]
 +
**''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
 +
**''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''
 +
*[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)'''], to create slanted sidewalls or curved surfaces.
  
 
==Photolithography Recipes==
 
==Photolithography Recipes==
  
{{Recipe Table Explanation}}
+
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small>
 +
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small>
 +
 
 +
''Click the tool title to go to recipes for that tool.''
  
 +
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
 
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
 
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
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|-  
! colspan="9" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>
+
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>
 
 
|- bgcolor="#D0E7FF"
 
|<!-- INTENTIONALLY LEFT BLANK --><br>
 
! colspan="2" bgcolor="#D0E7FF" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
 
! colspan="3" bgcolor="#D0E7FF" align="center" |'''[[Stepper Recipes|<big>Steppers Recipes</big>]]'''
 
  
 +
|-
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| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK -->
 +
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
 +
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
 +
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
 
|-
 
|-
 
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''  
 
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''  
 
{{LithRecipe Table}}
 
{{LithRecipe Table}}
|-
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|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue -->
| bgcolor="#D0E7FF" align="center" |AZ4110
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| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
| bgcolor="EEFFFF" |{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
| bgcolor="EEFFFF" |{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
 
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
 
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
| bgcolor="EEFFFF" |{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
 
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|A
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
 
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|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
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|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
 
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| bgcolor="#D0E7FF" align="center" |SPR 950-0.8
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| bgcolor="EEFFFF" |A
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| bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |SPR 955 CM-0.9
 
 
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
 
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| bgcolor="EEFFFF" |{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
 
| bgcolor="EEFFFF" |{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}
 
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
 
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
| bgcolor="EEFFFF" |{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
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| bgcolor="EEFFFF" |{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
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| bgcolor="EEFFFF" |{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}
 
| bgcolor="EEFFFF" |{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}
 
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|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
 
|-
 
|-
| bgcolor="#D0E7FF" align="center" |UV6-0.8
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
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| bgcolor="EEFFFF" |{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
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|- bgcolor="EEFFFF"
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| bgcolor="#D0E7FF" align="center" |UV26-2.5
 
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| bgcolor="EEFFFF" |
 
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|-
 
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! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''  
 
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''  
 
{{LithRecipe Table}}
 
{{LithRecipe Table}}
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| bgcolor="#D0E7FF" align="center" |SU-8 2005,2010, 2015
+
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
 
|A
 
|A
 
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
 
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
Line 232: Line 262:
 
|A
 
|A
 
|
 
|
 
+
|A
|-  
+
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |SU-8 2075
+
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
 
|A
 
|A
 
|A
 
|A
Line 240: Line 270:
 
|A
 
|A
 
|
 
|
 
+
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
+
|-  
| bgcolor="#D0E7FF" align="center" |NR9-1000,3000,6000PY
+
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
 
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
Line 248: Line 278:
 
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
 
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
 
|
 
|
 
+
|A
|-  
+
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
+
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
 
{{LithRecipe Table}}  
 
{{LithRecipe Table}}  
 +
|-
 +
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
 +
|
 +
|
 +
|A
 +
|A
 +
|
 +
|A
 
|- bgcolor="EEFFFF"
 
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |DUV42-P
+
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
 
|
 
|
 
|
 
|
 
|
 
|
 
|
 
|
|{{rl|Stepper Recipes|DUV-42P}}
+
|{{rl|Stepper Recipes|DUV-42P-6}}
 
+
|
 +
|
 
|-
 
|-
| bgcolor="#D0E7FF" align="center" |DS-K101-304
+
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
 
|
 
|
 
|
 
|
Line 267: Line 306:
 
|
 
|
 
|{{rl|Stepper Recipes|DS-K101-304}}
 
|{{rl|Stepper Recipes|DS-K101-304}}
 
+
|
 
|-
 
|-
 
! bgcolor="#D0E7FF" align="center" |  
 
! bgcolor="#D0E7FF" align="center" |  
Line 274: Line 313:
 
<!-- end Litho Recipes table -->
 
<!-- end Litho Recipes table -->
  
==E-Beam Lithography Recipes==
+
==Lift-Off Recipes==
 +
 
 +
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
 +
**How it works, process limits and considerations for designing your process
 +
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
 +
**''Single Expose/Develop process for simplicity''
 +
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
 +
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
 +
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
 +
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
 +
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''
 +
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
 +
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
 +
**''Single-expose/develop process''
 +
**''Up to ~65nm metal thickness & ~350nm gap between metal''
 +
**''Use thicker PMGI for thicker metals''
 +
 
 +
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==
  
 
*Under Development.
 
*Under Development.
 +
 +
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
 +
''To Be Added''
  
 
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
 
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
 
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
 
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
 +
{| class="wikitable"
 +
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
 +
|'''''<u>Coating Material</u>'''''
 +
|'''''<u>Route/Chain</u>'''''
 +
|'''''<u>Name</u>''': User: "UCSB Users"''
 +
|'''''<u>Spin Speed (krpm)</u>'''''
 +
|'''''<u>Bake Temp</u>'''''
 +
|'''''<u>Notes</u>'''''
 +
|-
 +
|'''''DS-K101'''''
 +
|''Route''
 +
| colspan="4" |''DSK101's Develop Rate depends on Bake temp - you can use this to control undercut.'' 
 +
 +
''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-220C
 +
|5.0
 +
|220°C
 +
|''Requires: HP4=220°C''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-210C
 +
|5.0
 +
|210°C
 +
|''Requires: HP4=210°C''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-200C
 +
|5.0
 +
|200°C
 +
|''Requires: HP4=200°C''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-185C
 +
|5.0
 +
|185°C
 +
|''Requires: HP4=185°C''
 +
|-
 +
|'''''UV6-0.8'''''
 +
|''Route''
 +
|Coat-UV6[2K]-135C
 +
|2.0
 +
|135°C
 +
|''Requires: HP1=135°C''
 +
|-
 +
|
 +
|
 +
|Coat-UV6[2.5K]-135C
 +
|2.5
 +
|135°C
 +
|
 +
|-
 +
|
 +
|
 +
|Coat-UV6[3K]-135C
 +
|3.0
 +
|135°C
 +
|
 +
|-
 +
|
 +
|
 +
|Coat-UV6[3.5K]-135C
 +
|3.5
 +
|135°C
 +
|
 +
|-
 +
|
 +
|
 +
|Coat-UV6[4K]-135C
 +
|4.0
 +
|135°C
 +
|
 +
|-
 +
|
 +
|
 +
|Coat-UV6[5K]-135C
 +
|5.0
 +
|135°C
 +
|
 +
|-
 +
|
 +
|
 +
|Coat-UV6[6K]-135C
 +
|6.0
 +
|135°C
 +
|
 +
|-
 +
|'''''DS-K101 @ 220°C'''''
 +
'''''+ UV6'''''
 +
|''Chain''
 +
|Coat-DSK101[5K]-220C-UV6[2K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 2.0krpm''
 +
|DSK: 220°C
 +
UV6: 135°C
 +
|''Requires:''
 +
''– HP4=220°C''
  
''To Be Added''
+
''– HP1=135°C''
  
==Nanoimprinting Recipes==
+
''Plan for ~10-15 min per wafer.''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-220C-UV6[2.5K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 2.5krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-220C-UV6[3K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 3.0krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-220C-UV6[3.5K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 3.5krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-220C-UV6[4K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 4.0krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-220C-UV6[5K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 5.0krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-220C-UV6[6K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 6.0krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|'''''DS-K101 @ 185°C'''''
 +
'''''+ UV6'''''
 +
|''Chain''
 +
|Coat-DSK101[5K]-185C-UV6[2K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 2.0krpm''
 +
|DSK: 185°C
 +
UV6: 135°C
 +
|''Requires:''
 +
''– HP4=185°C''
  
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}}
+
''– HP1=135°C''
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}}
 
  
==Holography Recipes==
+
''Plan for ~10-15 min per wafer.''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-185C-UV6[2.5K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 2.5krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-185C-UV6[3K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 3.0krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-185C-UV6[3.5K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 3.5krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-185C-UV6[4K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 4.0krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-185C-UV6[5K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 5.0krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|
 +
|
 +
|Coat-DSK101[5K]-185C-UV6[6K]-135C
 +
|''DSK: 5krpm''
 +
''UV6: 6.0krpm''
 +
|''same as above''
 +
|''same as above''
 +
|-
 +
|'''''Hotplate Set'''''
 +
|''Route''
 +
|''SET-HP4-220C''
 +
|
 +
|220°C
 +
|''Hotplate 4 (top) between 218-222°C when done.''
 +
|-
 +
|
 +
|
 +
|''SET-HP4-210C''
 +
|
 +
|210°C
 +
|
 +
|-
 +
|
 +
|
 +
|''SET-HP4-200C''
 +
|
 +
|200°C
 +
|
 +
|-
 +
|
 +
|
 +
|''SET-HP4-185C''
 +
|
 +
|185*C
 +
|
 +
|}
 +
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
 +
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''
  
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_(ARC-11_%26_THMR-IP3600HP-D)-updated-8-13-2018-A.pdf|Standard Holography Process - on SiO2 on Si}}
+
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
 
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
 
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
 
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
 
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
Line 300: Line 598:
 
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
 
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
 
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}
 
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}
 
==Lift-Off Techniques==
 
 
*{{fl|Liftoff-Techniques.pdf|Description/Tutorial}}
 
*[[Lift-Off Tutorial|Lift-Off Tutorial and Limits]]
 
**How it works, process limits and considerations for designing your process
 
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
 
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
 
  
 
==Chemicals Stocked + Datasheets==
 
==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we have available in the lab, with links to the datasheets for each.  The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''
+
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each.  The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''
 
{|
 
{|
 
|- valign="top"
 
|- valign="top"
Line 319: Line 609:
  
 
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
 
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
 +
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
 
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
 
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
 
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
 
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
 
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
 
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*{{fl|THMR_iP_3500_iP3600.pdf|THMR-3600HP-1 (thin i-line and Holography)}}
+
*THMR-3600HP (Thin I-Line & Holography)
*{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|THMR-3600HP-2 (thin i-line and Holography)}}
+
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
*{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|THMR-3600HP-3 (thin i-line and Holography)}}
+
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
 +
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}
  
 
'''''DUV-248nm'''''
 
'''''DUV-248nm'''''
Line 331: Line 623:
 
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
 
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
 
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}
 
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}
 
  
 
;<div id="NegativePR"><big>Negative Photoresists</big></div>
 
;<div id="NegativePR"><big>Negative Photoresists</big></div>
Line 349: Line 640:
  
 
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}
 
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}
 
  
 
;<div id="Underlayers"><big>Underlayers</big></div>
 
;<div id="Underlayers"><big>Underlayers</big></div>
Line 355: Line 645:
 
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
 
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
 
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}
 
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}
 
  
 
;<div id="EBLPR"><big>E-beam resists</big></div>
 
;<div id="EBLPR"><big>E-beam resists</big></div>
Line 361: Line 650:
 
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
 
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
 
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}
 
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}
 
  
 
;<div id="NanoImprinting"><big>Nanoimprinting</big></div>
 
;<div id="NanoImprinting"><big>Nanoimprinting</big></div>
Line 374: Line 662:
  
 
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}
 
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}
 
  
 
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>
 
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>
  
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC (i-line)}}
+
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}}
+
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
 
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}
 
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}
 
  
 
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>
 
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>
Line 389: Line 675:
 
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
 
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
 
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}
 
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}
 
  
 
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>
 
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>
Line 401: Line 686:
 
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
 
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
 
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}
 
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}
 
  
 
;<div id="Developers"><big>Developers</big></div>
 
;<div id="Developers"><big>Developers</big></div>
Line 410: Line 694:
 
*SU-8 Developer
 
*SU-8 Developer
 
*101A Developer (for DUV Flood Exposed PMGI)
 
*101A Developer (for DUV Flood Exposed PMGI)
 
  
 
;<div id="PRRemovers"><big>Photoresist Removers</big></div>
 
;<div id="PRRemovers"><big>Photoresist Removers</big></div>
Line 422: Line 705:
 
|}
 
|}
  
[[Category:Processing]]
+
[[Category: Processing]]
 +
[[category: Lithography]]
 +
[[category: Recipes]]

Latest revision as of 13:38, 8 November 2022

Table of Contents

Photolithography Processes

  1. UV Optical Lithography
  2. General Photolithography Techniques
    • Techniques for improving litho. or solving common photolith. problems.
  3. Lift-Off Recipes
    • Verified Recipes for lift-off using various photolith. tools
    • General educational description of this technique and it's limitations/considerations.
  4. E-beam Lithography
  5. Holography
    • For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.
    • Recipes for silicon substrates are provided, and have been translated to other substrates by users.
    • Datasheets are provided with starting recipes and usage info.
  6. Edge-Bead Removal
    • Edge photoresist removal methods needed for clamp-based etchers
    • Improves resolution for contact lithography

Photolithography Chemicals/Materials

  1. Underlayers
    • These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.
    • Datasheets are provided.
  2. Anti-Reflection Coatings:
    • The Photoresist Recipes section contains recipes using these materials.
    • Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.
    • Datasheets are provided for reference on use of the materials.
  3. Contrast Enhancement Materials (CEM)
    • The Photoresist Recipes section contains recipes using these materials.
    • Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.
    • Datasheets provided with usage info.
  4. Adhesion Promoters
    • These are used to improve wetting of photoresists to your substrate.
    • Datasheets are provided on use of these materials.
  5. Low-K Spin-on Dielectrics
  6. Developers and Removers
    • Datasheets provided for reference.
    • Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.

General Photolithography Techniques

  • HMDS Process for Improving Adhesion
    • Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.
  • Edge-Bead Removal Techniques
    • These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
    • For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.
  • Photoresist reflow (MicroChem), to create slanted sidewalls or curved surfaces.

Photolithography Recipes

  • R: Recipe is available. Clicking this link will take you to the recipe.
  • A: Material is available for use, but no recipes are provided.

Click the tool title to go to recipes for that tool.

Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.

Photolithography Recipes
Contact Aligner Recipes Stepper Recipes Direct-Write Litho. Recipes
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
AZ4110 R R A A R
AZ4210 R R A A A
AZ4330RS R R A A R
AZ4620 A A A A A
OCG 825-35CS A A A A A
SPR 955 CM-0.9 A R R R R
SPR 955 CM-1.8 A A R R A
SPR 220-3.0 R R R R R
SPR 220-7.0 R R R R A
THMR-IP3600 HP D A A R
UV6-0.8 R
UV210-0.3 R
UV26-2.5 A
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
AZ5214-EIR R R R R R
AZnLOF 2020 R R R R R
AZnLOF 2035 A A A A A
AZnLOF 2070 A A A A A
AZnLOF 5510 A A R R A
UVN30-0.8 R
SU-8 2005,2010,2015 A R A A A
SU-8 2075 A A A A R
NR9-1000,3000,6000PY R R A R A
Anti-Reflection Coatings SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
XHRiC-11 A A A
DUV42-P R
DS-K101-304 R
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)

Lift-Off Recipes

E-Beam Lithography Recipes (JEOL JBX-6300FS)

  • Under Development.

FIB Lithography Recipes (Raith Velion)

To Be Added

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

Ask Staff if you need a new recipe.
Coating Material Route/Chain Name: User: "UCSB Users" Spin Speed (krpm) Bake Temp Notes
DS-K101 Route DSK101's Develop Rate depends on Bake temp - you can use this to control undercut.

See: DSK Bake vs. Dev rate

Coat-DSK101[5K]-220C 5.0 220°C Requires: HP4=220°C
Coat-DSK101[5K]-210C 5.0 210°C Requires: HP4=210°C
Coat-DSK101[5K]-200C 5.0 200°C Requires: HP4=200°C
Coat-DSK101[5K]-185C 5.0 185°C Requires: HP4=185°C
UV6-0.8 Route Coat-UV6[2K]-135C 2.0 135°C Requires: HP1=135°C
Coat-UV6[2.5K]-135C 2.5 135°C
Coat-UV6[3K]-135C 3.0 135°C
Coat-UV6[3.5K]-135C 3.5 135°C
Coat-UV6[4K]-135C 4.0 135°C
Coat-UV6[5K]-135C 5.0 135°C
Coat-UV6[6K]-135C 6.0 135°C
DS-K101 @ 220°C

+ UV6

Chain Coat-DSK101[5K]-220C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

DSK: 220°C

UV6: 135°C

Requires:

– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.

Coat-DSK101[5K]-220C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above
Coat-DSK101[5K]-220C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above
DS-K101 @ 185°C

+ UV6

Chain Coat-DSK101[5K]-185C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

DSK: 185°C

UV6: 135°C

Requires:

– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.

Coat-DSK101[5K]-185C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above
Coat-DSK101[5K]-185C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above
Hotplate Set Route SET-HP4-220C 220°C Hotplate 4 (top) between 218-222°C when done.
SET-HP4-210C 210°C
SET-HP4-200C 200°C
SET-HP4-185C 185*C

Holography Recipes

The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.

Low-K Spin-On Dielectric Recipes

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

DUV-248nm

Negative Photoresists

i-line and broadband

DUV-248nm

Underlayers
E-beam resists
Nanoimprinting
Contrast Enhancement Materials
Anti-Reflection Coatings
Adhesion Promoters
Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass

Developers
Photoresist Removers